Introduction of PANI Thin Films

Advances in Chemical and Materials Engineering - Properties, Techniques, and Applications of Polyaniline (PANI) Thin Films ◽

10.4018/978-1-5225-9896-1.ch001 ◽

2020 ◽

pp. 1-27

Keyword(s):

Thin Films ◽

Conducting Polymers ◽

Essential Feature ◽

Molecular Structures ◽

Environmental Stability ◽

Type Material ◽

Acid Base ◽

Potential Applications ◽

P Type ◽

Reduced State

In all conducting polymers (CPs), polyaniline (PANI) is one of the most thoroughly studied CPs. An essential feature of PANI is that its repeating units have two different moieties in different weights: oxidized and reduced state. In light of this element, PANI might be doped to get new molecular structures with various properties. It is considered as a (p-type) material, since it has excellent mechanical flexibility and environmental stability, and its conductivity could be controlled with acid/base (doping/undoping), it has potential applications in numerous fields, for example, lightweight battery electrodes, electromagnetic shielding devices, anti-corrosion coatings, and sensors. This chapter is focused on PANI as a leading polymer and brief synthesis of PANI thin films by the diverse strategies pursued by various applications in different fields.

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Formation of p-type Cu3BiS3 absorber thin films by annealing chemically deposited Bi2S3–CuS thin films

Journal of Materials Research ◽

10.1557/jmr.1997.0099 ◽

1997 ◽

Vol 12 (3) ◽

pp. 651-656 ◽

Cited By ~ 57

Author(s):

P. K. Nair ◽

L. Huang ◽

M. T. S. Nair ◽

Hailin Hu ◽

E. A. Meyers ◽

...

Keyword(s):

Thin Films ◽

Visible Region ◽

Atomic Diffusion ◽

Optical Coatings ◽

X Ray Diffraction ◽

X Ray ◽

Cell Structures ◽

Potential Applications ◽

Xrd Patterns ◽

P Type

Formation of the ternary compound Cu3BiS3 during annealing of chemically deposited CuS (∼0.3 μm) films on Bi2S3 film (∼0.1 μm on glass substrate) is reported. The interfacial atomic diffusion leading to the formation of the compound during the annealing is indicated in x-ray photoelectron depth profile spectra of the films. The formation of Cu3BiS3 (Wittichenite, JCPDS 9-488) is confirmed by the x-ray diffraction (XRD) patterns. The films are optically absorbing in the entire visible region (absorption coefficient 4 × 104 cm−1 at 2.48 eV or 0.50 μm) and are p-type with electrical conductivity of 102−103 Ω−1 cm−1. Potential applications of these films as optical coatings in the control of solar energy transmittance through glazings and as a p-type absorber film in solar cell structures are indicated.

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CRYSTAL STRUCTURE AND PROPERTIES OF CU-AL-O THIN FILMS

International Journal of Modern Physics B ◽

10.1142/s0217979202009809 ◽

2002 ◽

Vol 16 (01n02) ◽

pp. 308-313 ◽

Cited By ~ 3

Author(s):

YUE WANG ◽

HAO GONG ◽

LING LIU

Keyword(s):

Thin Films ◽

Transparent Conducting Oxide ◽

Chemical Vapor ◽

X Ray Diffraction ◽

Transparent Conducting ◽

Potential Applications ◽

Metal Organic ◽

Hall Effect Measurements ◽

Organic Precursors ◽

P Type

P-type transparent conducting oxide thin films have attracted much attention due to their potential applications in novel transparent p-n junction devices. In this work, the transparent conducting Cu-Al-O thin films were prepared by the plasma enhanced chemical vapor deposition using metal organic precursors of Cu(acac) 2 and Al(acac) 3 (acac=acetylacetonate) while the substrate temperature was varied from 700 to 800°C. The x-ray diffraction and SEM results are analyzed to investigate the structure of the as-deposited and annealed films. The films contain metal copper and small grains of CuAlO 2. After annealing, metal copper turned into CuO . Hall effect measurements reveal that these films are p-type semiconductors and the film conductivity increased with the growth temperature.

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Plasma Impulse CVD Deposited TiO2 Waveguiding Films: Properties and Potential Applications in Integrated Optical Sensor Systems

MRS Proceedings ◽

10.1557/proc-276-117 ◽

1992 ◽

Vol 276 ◽

Cited By ~ 17

Author(s):

M. Heming ◽

B. Danielzik ◽

J. Otto ◽

V. Paquet ◽

Ch. Fattinger

Keyword(s):

Thin Films ◽

Optical Sensor ◽

Environmental Stability ◽

Sensor Systems ◽

Integrated Optical ◽

Potential Applications ◽

Low Volume ◽

Substrate Temperatures ◽

Integrated Optical Sensor

ABSTRACTPlasma impulse CVD deposited titania thin films, deposited at low substrate temperatures, exhibit low volume losses of < 0.2 dB/cm and high environmental stability. Their use in novel concepts for integrated optical immunosensors is discussed.

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OMVPE Growth of ZnSe Utilizing Zinc Amides as Source Compounds: Relevance to the Production of p-Type Material

MRS Proceedings ◽

10.1557/proc-242-281 ◽

1992 ◽

Vol 242 ◽

Cited By ~ 2

Author(s):

William S. Rees ◽

David M. Green ◽

Timothy J. Anderson ◽

Eric Bretschneider

Keyword(s):

Thin Films ◽

Type Material ◽

Zinc Source ◽

Dopant Level ◽

P Type

ABSTRACTGrowth of ZnSe on GaAs from H2S9 and Zn[N(TMS)2]2 precursors has been demonstrated. When Et2Zn is used as the zinc precursor a higher quality deposit is obtained. Results of experiments employing Et2Zn as the main zinc source with Zn[N(TMS)2]2 introduced at a dopant level indicate nitrogen has been incorporated. Final thin films were characterized by PL, XRD, SIMS, and Raman.

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Magnesium Zirconate Titanate Thin Films Used as an NO2 Sensing Layer for Gas Sensor Applications Developed Using a Sol–Gel Method

Sensors ◽

10.3390/s21082825 ◽

2021 ◽

Vol 21 (8) ◽

pp. 2825

Author(s):

Pei-Shan Huang ◽

Ke-Jing Lee ◽

Yeong-Her Wang

Keyword(s):

Thin Films ◽

Gas Sensor ◽

Sol Gel ◽

Sensor Applications ◽

Zirconate Titanate ◽

Coating Method ◽

Potential Applications ◽

Gas Molecules ◽

P Type ◽

High Repeatability

Magnesium zirconate titanate (MZT) thin films, used as a sensing layer on Al interdigitated electrodes prepared using a sol–gel spin-coating method, are demonstrated in this study. The p-type MZT/Al/SiO2/Si structure for sensing NO2 is also discussed. The results indicated that the best sensitivity of the gas sensor occurred when it was operating at a temperature ranging from 100 to 150 °C. The detection limit of the sensor was as low as 250 ppb. The sensitivity of the MZT thin film was 8.64% and 34.22% for 0.25 ppm and 5 ppm of NO2 gas molecules at a working temperature of 150 °C, respectively. The gas sensor also exhibited high repeatability and selectivity for NO2. The response values to 250, 500, 1000, 1500, 2000, 2500, and 5000 ppb NO2 at 150 °C were 8.64, 9.52, 12, 16.63, 20.3, 23, and 34.22%, respectively. Additionally, we observed a high sensing linearity in NO2 gas molecules. These results indicate that MZT-based materials have potential applications for use as gas sensors.

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Thermodynamics and Microstructure Development in the Thin Film Reaction of Aluminum on Silicon Carbide

MRS Proceedings ◽

10.1557/proc-403-489 ◽

1995 ◽

Vol 403 ◽

Cited By ~ 1

Author(s):

T. S. Hayes ◽

F. T. Ray ◽

K. P. Trumble ◽

E. P. Kvam

Keyword(s):

Thin Film ◽

Thin Films ◽

Silicon Carbide ◽

Ohmic Contacts ◽

Microstructure Development ◽

P Type ◽

Microstructural Studies

AbstractA refined thernodynamic analysis of the reaction between molen Al and SiC is presented. The calculations indicate much higher Si concentrations for saturation with respect to AkC 3 formation than previously reported. Preliminary microstructural studies confirm the formation of interfacial A14C3 for pure Al thin films on SiC reacted at 9000C. The implications of the calculations and experimental observations for the production of ohmic contacts to p-type SiC are discussed.

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Conducting polymers: a comprehensive review on recent advances in synthesis, properties and applications

RSC Advances ◽

10.1039/d0ra07800j ◽

2021 ◽

Vol 11 (10) ◽

pp. 5659-5697 ◽

Cited By ~ 2

Author(s):

Namsheer K ◽

Chandra Sekhar Rout

Keyword(s):

Mechanical Properties ◽

Electrical Property ◽

Conducting Polymers ◽

Inorganic Materials ◽

Environmental Stability ◽

Comprehensive Review ◽

Recent Advances ◽

Synthesis Properties

Conducting polymers are extensively studied due to their outstanding properties, including tunable electrical property, optical and high mechanical properties, easy synthesis and effortless fabrication and high environmental stability over conventional inorganic materials.

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A Slot-Die Technique for the Preparation of Continuous, High-Area, Chitosan-Based Thin Films

Polymers ◽

10.3390/polym13101566 ◽

2021 ◽

Vol 13 (10) ◽

pp. 1566

Author(s):

Oliver J. Pemble ◽

Maria Bardosova ◽

Ian M. Povey ◽

Martyn E. Pemble

Keyword(s):

Thin Films ◽

Mechanical Properties ◽

High Volume ◽

Mechanical Anisotropy ◽

Diverse Range ◽

Direction Parallel ◽

High Area ◽

Wide Range ◽

Slot Die ◽

Potential Applications

Chitosan-based films have a diverse range of potential applications but are currently limited in terms of commercial use due to a lack of methods specifically designed to produce thin films in high volumes. To address this limitation directly, hydrogels prepared from chitosan, chitosan-tetraethoxy silane, also known as tetraethyl orthosilicate (TEOS) and chitosan-glutaraldehyde have been used to prepare continuous thin films using a slot-die technique which is described in detail. By way of preliminary analysis of the resulting films for comparison purposes with films made by other methods, the mechanical strength of the films produced was assessed. It was found that as expected, the hybrid films made with TEOS and glutaraldehyde both show a higher yield strength than the films made with chitosan alone. In all cases, the mechanical properties of the films were found to compare very favorably with similar measurements reported in the literature. In order to assess the possible influence of the direction in which the hydrogel passes through the slot-die on the mechanical properties of the films, testing was performed on plain chitosan samples cut in a direction parallel to the direction of travel and perpendicular to this direction. It was found that there was no evidence of any mechanical anisotropy induced by the slot die process. The examples presented here serve to illustrate how the slot-die approach may be used to create high-volume, high-area chitosan-based films cheaply and rapidly. It is suggested that an approach of the type described here may facilitate the use of chitosan-based films for a wide range of important applications.

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