High Resolution Photoluminescence of EDGE and Near-Edge CdTe

1992 ◽  
Vol 242 ◽  
Author(s):  
M. C. Carmo ◽  
M. J. Soares
Keyword(s):  
Heat Treatment ◽  
High Resolution ◽  
Crystal Quality ◽  
Luminescence Properties ◽  
Type Conversion ◽  
Edge Luminescence ◽  
Conductivity Type ◽  
The One ◽  
P Type

ABSTRACTAmong II-VI semiconductors CdTe is the one that can be grown in better crystal quality. However most of the edge and near edge luminescence properties are still to be clarified. CdTe can be obtained in both n and p type and conductivity type conversion is obtained under heat treatment.In this work we studied the behaviour of a batch of CdTe samples under annealing in different conditions. We observed the growth and destruction of the 1.47 eV band and separated the 1.47 eV and 1.43 eV bands. We also show that these bands are strongly related with the chemical stoi chiometry.

Ion milling-induced conductivity-type conversion in p-type HgCdTe MBE-grown films with graded-gap surface layers

2010 ◽  
Vol 25 (6) ◽  
pp. 065012 ◽  
Author(s):  
M Pociask ◽  
I I Izhnin ◽  
S A Dvoretsky ◽  
Yu G Sidorov ◽  
V S Varavin ◽  
...  
Keyword(s):  
Ion Milling ◽  
Type Conversion ◽  
Surface Layers ◽  
Conductivity Type ◽  
P Type

Conductivity type conversion of p-type CuInSe2 due to hydrogenation

2001 ◽  
Vol 179 (1-4) ◽  
pp. 203-208 ◽  
Author(s):  
K Otte ◽  
G Lippold ◽  
D Hirsch ◽  
R.K Gebhardt ◽  
T Chassé
Keyword(s):  
Type Conversion ◽  
Conductivity Type ◽  
P Type

The study of HgCdTe MBE-grown structure with ion milling

2010 ◽  
Vol 18 (3) ◽  
Author(s):  
M.M. Pociask
Keyword(s):  
Molecular Beam ◽  
Ion Milling ◽  
Type Conversion ◽  
Defect Complexes ◽  
Conductivity Type ◽  
Equilibrium Processes ◽  
Before And After ◽  
P Type ◽  
Grown Structure

AbstractOf many techniques used to characterize quality of HgCdTe, ion milling is emerging as a unique means to reveal electrically active and neutral defects and complexes. Ion milling is capable of strongly affecting electrical properties of HgCdTe, up to conductivity type conversion in p-type material. It appears, that strongly non-equilibrium processes which take place under ion milling, when material is oversaturated with mercury interstitial atoms generated near a surface, lead to formation of specific defect complexes, which may not form under other type of treatment. By measuring parameters of a crystal before and after milling, and following disintegration of defects with time after ion milling (’relaxation’), one can detect and identify these defects. This method was applied to analyse different samples grown by molecular beam epitaxy.

Electrical Characterization and Defect-Related Luminescence in Oxygen Implanted Silicon

2015 ◽  
Vol 242 ◽  
pp. 368-373 ◽  
Author(s):  
D.V. Danilov ◽  
O.F. Vyvenko ◽  
N.A. Sobolev ◽  
V.I. Vdovin ◽  
A.S. Loshachenko ◽  
...  
Keyword(s):  
Positive Charge ◽  
Electrical Characterization ◽  
Luminescence Spectra ◽  
Type Conversion ◽  
Free Electron Concentration ◽  
Light Emitting ◽  
Conductivity Type ◽  
Significant Difference ◽  
P Type ◽  
Oxygen Precipitates

Defect structure, electrical properties and defect-related luminescence (DRL) of light emitting diodes (LED) with the active defect-rich region produced by oxygen implantation and a subsequent multistep annealing of silicon wafers were investigated. It was found that defect-rich regions possess an embedded positive charge in both n-and p-type of the samples whose origin was ascribed to oxygen precipitates (OP). The presence of that charge in the implanted region of p-based LED gave rise to the apparent conductivity type conversion and to a significant increase of free electron concentration in n-based LEDs. A significant difference in the shape and in the excitation dependence of luminescence spectra as well as in the properties of DLTS signals was found between p-and n-type samples. From an analysis of the obtained data the DRL band centered at 0.79 eV was ascribed to small OPs segregated at dislocations whose filling with the holes hinders optical transitions via dislocation-related states at 0.805 eV and the broad DRL band at energies higher than 0.81 eV was ascribed to large OPs.

The Novel Dopant Profile Inspection Methodology by FIB

2010 ◽  
Author(s):  
Po Fu Chou ◽  
Li Ming Lu
Keyword(s):  
High Resolution ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Real Sample ◽  
Physical Analysis ◽  
The Novel ◽  
High Contrast ◽  
Dopant Profile ◽  
P Type

Abstract Dopant profile inspection is one of the focused ion beam (FIB) physical analysis applications. This paper presents a technique for characterizing P-V dopant regions in silicon by using a FIB methodology. This technique builds on published work for backside FIB navigation, in which n-well contrast is observed. The paper demonstrates that the technique can distinguish both n- and p-type dopant regions. The capability for imaging real sample dopant regions on current fabricated devices is also demonstrated. SEM DC and FIB DC are complementary methodologies for the inspection of dopants. The advantage of the SEM DC method is high resolution and the advantage of FIB DC methodology is high contrast, especially evident in a deep N-well region.

scholarly journals The Impact of Heat Treatment on the Behavior of a Hot-Dip Zinc Coating Applied to Steel During Dry Friction

Materials ◽  
2021 ◽  
Vol 14 (3) ◽  
pp. 660
Author(s):  
Dariusz Jędrzejczyk ◽  
Elżbieta Szatkowska
Keyword(s):  
Heat Treatment ◽  
Wear Resistance ◽  
Friction Coefficient ◽  
Dry Friction ◽  
Zinc Coating ◽  
Pin On Disc ◽  
The One ◽  
The Impact ◽  
Coating Hardness ◽  
Anticorrosion Properties

The analyzed topic refers to the wear resistance and friction coefficient changes resulting from heat treatment (HT) of a hot-dip zinc coating deposited on steel. The aim of research was to evaluate the coating behavior during dry friction after HT as a result of microstructure changes and increase the coating hardness. The HT parameters should be determined by taking into consideration, on the one hand, coating wear resistance and, on the other hand, its anticorrosion properties. A hot-dip zinc coating was deposited in industrial conditions (according EN ISO 10684) on disc-shaped samples and the chosen bolts. The achieved results were assessed on the basis of tribological tests (T11 pin-on-disc tester, Schatz®Analyse device, Sindelfingen, Germany), microscopic observations (with the use of optical and scanning microscopy), EDS (point and linear) analysis, and microhardness measurements. It is proved that properly applied HT of a hot-dip zinc coating results in changes in the coating’s microstructure, hardness, friction coefficient, and wear resistance.

The Effect of Doping Concentration and Conductivity Type on Preferential Etching of 4H-SiC by Molten KOH

2004 ◽  
Vol 815 ◽  
Author(s):  
Ying Gao ◽  
Zehong Zhang ◽  
Robert Bondokov ◽  
Stanislav Soloviev ◽  
Tangali Sudarshan
Keyword(s):  
Thermal Diffusion ◽  
Basal Plane ◽  
Doping Concentration ◽  
Structural Defects ◽  
Etch Pits ◽  
Conductivity Type ◽  
Isotropic Etching ◽  
Electrochemical Processes ◽  
P Type ◽  
Koh Etching

AbstractMolten KOH etchings were implemented to delineate structural defects in the n- and ptype 4H-SiC samples with different doping concentrations. It was observed that the etch preference is significantly influenced by both the doping concentrations and the conductivity types. The p-type Si-face 4H-SiC substrate has the most preferential etching property, while it is least for n+ samples. It has been clearly demonstrated that the molten KOH etching process involves both chemical and electrochemical processes, during which isotropic etching and preferential etching are competitive. The n+ 4H-SiC substrate was overcompensated via thermal diffusion of boron to p-type and followed by molten KOH etching. Three kinds of etch pits corresponding to threading screw, threading edge, and basal plane dislocations are distinguishably revealed. The same approach was also successfully employed in delineating structural defects in (0001) C-face SiC wafers.

The Effect of Heat Treatment on Ni/Au Ohmic Contacts to p-Type GaN

1999 ◽  
Vol 176 (1) ◽  
pp. 773-777 ◽  
Author(s):  
Li-Chien Chen ◽  
Jin-Kuo Ho ◽  
Fu-Rong Chen ◽  
Ji-Jung Kai ◽  
Li Chang ◽  
...  
Keyword(s):  
Heat Treatment ◽  
Ohmic Contacts ◽  
P Type

Cubic Boron Nitride as a New Semiconductor for Optoelectronics: Luminescence Properties and Potentialities

1989 ◽  
Vol 162 ◽  
Author(s):  
Koh Era ◽  
Osamu Mishima
Keyword(s):  
High Pressure ◽  
High Temperature ◽  
Boron Nitride ◽  
Room Temperature ◽  
Cubic Boron Nitride ◽  
Visible Region ◽  
Vibrational Structure ◽  
Luminescence Properties ◽  
Optoelectronic Applications ◽  
P Type

ABSTRACTIn cubic boron nitride made by high pressure and high temperature technique in our institute, we have found three luminescence bands in the ultraviolet and the short visible region at room temperature by cathode-ray excitation. They are: a band having vibrational structure and ascribable to undoped state of the crystal, a band ascribable to p-type doping and a band ascribable to n-type doping. Discussion is made on differences between the injection luminescence and the cathodoluminescence. Potentialities and difficulties in realizing the potentialities of cBN for optoelectronic applications are discussed.

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