Epitaxial Growth of AlN on 3C-SiC and Al2O3 Substrates
Keyword(s):
X Ray
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ABSTRACTA1N films were grown on the (100) plane of 3C-SiC/Si and the (0001) plane of A12O3 substrates by metalorganic chemical vapor deposition (MOCVD) using trimethylaluminum (TMA) and ammonia (NH3) as the precursors. The deposited films were characterized by X-ray diffraction (XRD) and a Read thin film camera. At 1150°C, preferentially oriented polycrystalline AlN films were obtained on both substrates and the crystal structure was wurtzite. The epitaxial relations were (1010)AlN//(100)SiC//(100)Si and (0001)AlN// (0001)Al2O3. The attempt to grow cubic AlN on 3C-SiC/Si was not successful.
2003 ◽
Vol 42
(Part 1, No. 8)
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pp. 4943-4948
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Characteristics of Gallium Oxide Nanowires Synthesized by the Metalorganic Chemical Vapor Deposition
2007 ◽
Vol 539-543
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pp. 1230-1235
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2004 ◽
Vol 22
(4)
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pp. 2165
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1997 ◽
Vol 36
(Part 1, No. 4A)
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pp. 2018-2021
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