Characterizat Ion of thin Pzt Films on Platinlm Films

1991 ◽  
Vol 243 ◽  
Author(s):  
Koichi Kugimiya ◽  
Ichiro Ueda ◽  
Kenji Iizima
Keyword(s):  
Lead Zirconate Titanate ◽  
Ferroelectric Properties ◽  
Lead Zirconate ◽  
Film Deposition ◽  
Pt Electrode ◽  
Island Formation ◽  
Pzt Film ◽  
Zirconate Titanate ◽  
Pzt Films ◽  
Pt Films

AbstractAnomalous layers 20-40nm thick were found at the interfaces of lead zirconate-titanate films and Pt electrode films. Detailed study has shown evidence that absorption of PbO by Pt during sputtering resulted in a Pb deficiency in the PZT films and the formation of PbTi3O7 phase. The anomaly was also partly due to island formation at the initial PZT film deposition which allowed PbO to react with Pt films. The Pb controlled PZT films 50nm thick exhibited excellent ferroelectric properties comparable to thicker ones.

Improvement of Ferroelectric Properties of Lead Zirconate Titanate Thin Films by Ion-substitution using Rare-earth Cations

2004 ◽  
Vol 830 ◽  
Author(s):  
Hiroshi Nakaki ◽  
Hiroshi Uchida ◽  
Shoji Okamoto ◽  
Shintaro Yokoyama ◽  
Hiroshi Funakubo ◽  
...  
Keyword(s):  
Thin Films ◽  
Rare Earth ◽  
Lead Zirconate Titanate ◽  
Ferroelectric Property ◽  
Ferroelectric Properties ◽  
Lead Zirconate ◽  
Crystal Anisotropy ◽  
Pzt Film ◽  
Zirconate Titanate ◽  
Ion Substitution

ABSTRACTRare-earth-substituted tetragonal lead zirconate titanate thin films were synthesized for improving the ferroelectric property of conventional lead zirconate titanate. Thin films of Pb1.00REx (Zr0.40Ti0.60)1-(3x /4)O3 (x = 0.02, RE = Y, Dy, Er and Yb) were deposited on (111)Pt/Ti/SiO2/(100)Si substrates by a chemical solution deposition (CSD). B-site substitution using rare-earth cations described above enhanced the crystal anisotropy, i.e., ratio of PZT lattice parameters c/a. Remanent polarization (Pr) of PZT film was enhanced by Y3+-, Dy3+- and Er3+-substitution from 20 μC/cm2 up to 26, 25 and 26 μC/cm2 respectively, while ion substitution using Yb3+ degraded the Pr value down to 16 μC/cm2. These films had similar coercive fields (Ec) of around 100 kV/cm. Improving the ferroelectric property of PZT film by rare-earth-substitution would be ascribed to the enhancement of the crystal anisotropy. We concluded that ion substitution using some rare-earth cations, such as Y3+, Dy3+ or Er3+, is one of promising technique for improving the ferroelectric property of PZT film.

Enhanced Spontaneous Polarization of Dysprosium-substituted Lead Zirconate Titanate Thin Films by a Chemical Solution Deposition Method

2004 ◽  
Vol 830 ◽  
Author(s):  
Hiroshi Uchida ◽  
Hiroshi Nakaki ◽  
Shoji Okamoto ◽  
Shintaro Yokoyama ◽  
Hiroshi Funakubo ◽  
...  
Keyword(s):  
Lead Zirconate Titanate ◽  
Spontaneous Polarization ◽  
Chemical Solution Deposition ◽  
Lead Zirconate ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Crystal Anisotropy ◽  
Pzt Film ◽  
Zirconate Titanate ◽  
Pzt Films

ABSTRACTInfluences of the B-site substitution using Dy3+ ion on the crystal structure and ferroelectric properties of lead zirconate titanate (PZT) films were investigated. Dy3+-substituted PZT films with nominal chemical compositions of Pb1.00Dyx (Zr0.40Ti0.60)1-(3x/4)O3 (x = 0 ∼ 0.06) were fabricated by a chemical solution deposition (CSD). Polycrystalline PZT films with preferential orientation of (111)PZT were obtained on (111)Pt/TiO2/SiO2/(100)Si substrates, while epitaxially-grown (111)PZT films were fabricated on (111)SrRuO3//(111)Pt//(100)YSZ//(100)Si substrate. Ratio of PZT lattice parameters (c/a), which corresponds to its crystal anisotropy, was enhanced by the Dy3+-substitution with x = 0.02. Spontaneous polarization (Ps) of Dy3+-substituted PZT film (x = 0.02) along polar [001] axis of PZT lattice was estimated from saturation polarization (Psat) value of the epitaxially-grown (111)PZT film on (111)SrRuO3//(111)Pt//(100)YSZ//(100)Si to be 84 μC/cm2 that was significantly larger than that of non-substituted PZT (= 71 μC/cm2). We concluded that the enhancement of Ps value could be achieved by the Dy3+-substitution that promoted the crystal anisotropy of PZT lattice.

Raman analysis of microcircuits with lead zirconate titanate (PZT) films

1992 ◽  
Vol 50 (2) ◽  
pp. 1688-1689
Author(s):  
D. R. Tallant ◽  
R. W. Schwartz ◽  
B. A. Tuttle ◽  
S. C. Everist ◽  
B. C. Tafoya
Keyword(s):  
Raman Spectroscopy ◽  
High Temperature ◽  
Lead Zirconate Titanate ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Lead Zirconate ◽  
Solution Chemistry ◽  
Zirconate Titanate ◽  
Pzt Films ◽  
High Temperature Processing

Certain compositions and structural forms of lead zirconate titanate (PZT) materials have potential applications in microelectronics because of their ferroelectric properties. One such application is in the development of new types of non-volatile memories. PZT films are integrated into microcircuit components using sol-gel deposition techniques. The solution chemistry effects attendant to different sol-gel preparation procedures have been investigated by several researchers.We have used Raman spectroscopy both to characterize the metallo-organic species initially laid down on macroscopic platinum substrates during sol-gel processing and to follow the evolution of Pb-Zr-Ti oxide species through high temperature processing. The high temperature processing removes residual organics and creates Pb-Zr-Ti oxide structures that have ferroelectric properties. Low temperature pyrochlore structures, which are not ferroelectric, can be distinguished by Raman spectroscopy from tetragonal and pseudo-cubic/rhombohedral perovskite structures, which are usefully ferroelectric (Top Figure). In addition Raman spectroscopy has identified lead and titanium oxides that form as intermediates in the high temperature crystallization of ferroelectric PZT structures.

Influence of structure and chemistry on piezoelectric properties of lead zirconate titanate in a microelectromechanical systems power generation application

2003 ◽  
Vol 18 (9) ◽  
pp. 2079-2086 ◽  
Author(s):  
L. M. R. Eakins ◽  
B. W. Olson ◽  
C. D. Richards ◽  
R. F. Richards ◽  
D. F. Bahr
Keyword(s):  
Crystal Structure ◽  
Lead Zirconate Titanate ◽  
Microelectromechanical Systems ◽  
Lead Zirconate ◽  
Solution Deposition ◽  
Zirconate Titanate ◽  
Tetragonal Crystal ◽  
Tetragonal Crystal Structure ◽  
Pzt Films ◽  
Pt Films

Lead zirconate titanate (PZT) films between 1 and 3 μm thick were grown using solution deposition techniques to study the effects of crystal structure and orientation on the direct piezoelectric output of these films on platinized Si membranes. By varying the chemistry of the film from Zr-rich to Ti-rich, the {100}/(111) relative intensity increased for films grown on randomly oriented Pt films. The 40:60 PZT had a tetragonal crystal structure and produced greater electrical output at a given strain than the rhombohedral film (Zr:Ti concentrations less than 50:50), while having a similar e31 constant, between 4.8 and 6.3 C/m2. Orientation and voltage output at a given strain were not strongly influenced by thickness in the ranges investigated. Defects in internal PZT/PZT crystallization interfaces were identified and include porosity on the order of tens of nm, with a corresponding depletion in Pb and accumulation of O at these interfaces. The {100} texture of rhombohedral films deposited upon (111) textured Pt films is significantly greater than the {100} texture of tetragonal films, which show both a {100} and {111} orientation on the same Pt film.

Orientation control of sol-gel-derived lead zirconate titanate film by addition of polyvinylpyrrolidone

2005 ◽  
Vol 20 (4) ◽  
pp. 882-888 ◽  
Author(s):  
Gun-Tae Park ◽  
Chee-Sung Park ◽  
Jong-Jin Choi ◽  
Hyoun-Ee Kim
Keyword(s):  
Lead Zirconate Titanate ◽  
Sol Gel ◽  
Lead Zirconate ◽  
Organic Residues ◽  
Si Substrates ◽  
Pzt Film ◽  
Oriented Film ◽  
Zirconate Titanate ◽  
Nucleation Sites ◽  
Pzt Films

Highly (100)- and (111)-oriented lead zirconate titanate (PZT) films with a thickness of 350 nm were deposited on platinized Si substrates through a single spinning of a PZT sol containing polyvinylpyrrolidone (PVP) as an additive. The crystallographic orientation of the film was strongly influenced by pyrolysis conditions after spin coating. When the spin-coated sol was pyrolyzed at temperatures above 320 °C for relatively long periods of time (>5 min), (111)-oriented film was formed after annealing at 700 °C for 10 min. On the other hand, when the same sol was pyrolyzed at 320 °C for short periods of time (<5 min), the film was strongly oriented to the (100) direction after annealing. Organic residues derived from PVP decomposition acted as nucleation sites for the (100) oriented grains during annealing after the pyrolysis. The effective d33 of the (100)-oriented PZT film (100 pC/N) was much higher than that of the (111)-oriented film (62 pC/N) with the same thickness.

Research of the PZT Polarization for Deformable Mirror

2014 ◽  
Vol 609-610 ◽  
pp. 1331-1335
Author(s):  
Jun Jie Chen ◽  
Ying Liu ◽  
Jian Qiang Ma ◽  
Ji Cong Deng ◽  
Bao Qing Li ◽  
...  
Keyword(s):  
Theoretical Analysis ◽  
Lead Zirconate Titanate ◽  
Piezoelectric Coefficient ◽  
Lead Zirconate ◽  
Deformable Mirror ◽  
Pzt Film ◽  
Zirconate Titanate

This paper demonstrates that the deformation of the piezoelectric deformable mirror (DM) is proportional to the transverse piezoelectric coefficient of the lead zirconate titanate (PZT) by the theoretical analysis. The optimal polarization conditions were obtained by experiments to optimize the performance of the DM. After the optimal polarization, the transverse piezoelectric coefficient of the PZT film increases from 350 pm/V to 431 pm/V, which will improve the deformation of the DM.

scholarly journals Ferroelectric properties of lead‐zirconate‐titanate films prepared by laser ablation

1991 ◽  
Vol 58 (25) ◽  
pp. 2910-2912 ◽  
Author(s):  
Hideo Kidoh ◽  
Toshio Ogawa ◽  
Akiharu Morimoto ◽  
Tatsuo Shimizu
Keyword(s):  
Laser Ablation ◽  
Lead Zirconate Titanate ◽  
Ferroelectric Properties ◽  
Lead Zirconate ◽  
Zirconate Titanate

Mist Deposition of Micron-Thick Lead Zirconate Titanate Films

2003 ◽  
Vol 784 ◽  
Author(s):  
Mark D. Losego ◽  
Susan Trolier-McKinstry
Keyword(s):  
Lead Zirconate Titanate ◽  
Chemical Deposition ◽  
Lead Zirconate ◽  
Limiting Factors ◽  
Process Time ◽  
Silicon Substrates ◽  
Zirconate Titanate ◽  
Pzt Films ◽  
Chamber Temperature ◽  
Thick Lead

ABSTRACTA majority of the work published on liquid source misted chemical deposition (LSMCD) has focused on the fabrication of thin ferroelectric films for random access memory (RAM) applications. However, the ability of LSMCD to combine the characteristically good stoichiometry control of a chemical solution deposition process with good film conformality, makes this a desirable technique for other applications, including microactuators and integrated passive components. For these applications, though, LSMCD is limited by its low throughput. This paper describes the feasibility of depositing micron-thick lead zirconate titanate (PZT) films using the LSMCD tool. PZT films of 52/48 composition were deposited on both platinized silicon and platinized alumina substrates. The chamber temperature and the delivery geometry of the LSMCD tool were identified as limiting factors in the rate at which micron-thick samples can be prepared. By switching to a focused nozzle delivery geometry and increasing the chamber temperature from room temperature to 60°C, the total process time for 1 μm thick films can be reduced from 480 min to 90 min. Polarization hysteresis measurements indicated a 75% higher remanent polarization for PZT films deposited on platinized alumina substrates (35 μC/cm2) compared to those deposed on platinized silicon substrates (20 μC/cm2). The polarization loop for the silicon substrate sample was also tilted. These observations are evidence of higher tensile stresses in the PZT films deposited on silicon substrates due to a larger mismatch in the thermal expansion coefficients of the film and the substrate.

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