Lattice site location of ultra-shallow implanted B in Si using ion beam analysis

2001 ◽  
Vol 669 ◽  
Author(s):  
Hajime Kobayashi ◽  
Ichiro Nomachi ◽  
Susumu Kusanagi ◽  
Fumitaka Nishiyama
Keyword(s):  
Ion Implantation ◽  
Lattice Site ◽  
Rutherford Backscattering Spectrometry ◽  
Hole Concentration ◽  
Ion Beam ◽  
Nuclear Reaction Analysis ◽  
High Dose ◽  
Site Location ◽  
Ion Channeling ◽  
Implantation Damage

ABSTRACTWe have investigated the lattice site location of B in Si using ion channeling in combination with nuclear reaction analysis (NRA). Silicon samples implanted with Boron at an energy of 10 keV and a dose of 5 × 1014 cm−2 (low dose samples) or 5 × 1015 cm−2 (high dose samples) were annealed at 1000 °C for 10 seconds (RTA) or at 800 °C for 10 minutes (FA). The activation efficiencies of these samples were estimated from the B atomic concentration and the hole concentration obtained by secondary ion mass spectrometry (SIMS) and spreading resistance profiling (SRP), respectively. We also studied the ion implantation damage of Si crystals using ion channeling combined with Rutherford backscattering spectrometry (RBS). We found that the activation efficiency is proportional to the substitutionality, meaning that substitutional B is fully activated without any carrier compensation. We also found that B atoms go to the substitutional sites and are activated up to the solubility limit in the high dose samples. However, the ion implantation damage of the crystalline Si in the high dose samples increases somewhat after annealing.

High Dose High Temperature Ion Implantation of Ge into 4H-SiC

2006 ◽  
Vol 527-529 ◽  
pp. 851-854 ◽  
Author(s):  
Thomas Kups ◽  
Petia Weih ◽  
M. Voelskow ◽  
Wolfgang Skorupa ◽  
Jörg Pezoldt
Keyword(s):  
High Temperature ◽  
Ion Implantation ◽  
Lattice Site ◽  
Lattice Distortion ◽  
Stacking Faults ◽  
Implantation Dose ◽  
Location Analysis ◽  
High Dose ◽  
Site Location ◽  
Different Types

A box like Ge distribution was formed by ion implantation at 600°C. The Ge concentration was varied from 1 to 20 %. The TEM investigations revealed an increasing damage formation with increasing implantation dose. No polytype inclusions were observed in the implanted regions. A detailed analysis showed different types of lattice distortion identified as insertion stacking faults. The lattice site location analysis by “atomic location by channelling enhanced microanalysis” revealed that the implanted Ge is mainly located at interstitial positions.

scholarly journals Ion Beam Modification of the Y-Ba-Cu-O System with the Mevva High Current Metal Ion Source

1989 ◽  
Vol 147 ◽  
Author(s):  
I. G. Brown ◽  
M. D. Rubin ◽  
K. M. Yu ◽  
R. Mutikainen ◽  
N. W. Cheung
Keyword(s):  
Ion Implantation ◽  
Metal Ion ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Rf Sputtering ◽  
Ion Source ◽  
Vacuum Arc ◽  
High Dose ◽  
High Current ◽  
Ion Beam Modification

AbstractWe have used high-dose metal ion implantation to ‘fine tune’ the composition of Y-Ba- Cu-O thin films. The films were prepared by either of two rf sputtering systems. One system uses three modified Varian S-guns capable of sputtering various metal powder targets; the other uses reactive rf magnetron sputtering from a single mixed-oxide stoichiometric solid target. Film thickness was typically in the range 2000–5000 A. Substrates of magnesium oxide, zirconia-buffered silicon, and strontium titanate have been used. Ion implantation was carried out using a metal vapor vacuum arc (MEVVA) high current metal ion source. Beam energy was 100–200 keV, average beam current about 1 mA, and dose up to about 1017 ions/cm2. Samples were annealed at 800 – 900°C in wet oxygen. Film composition was determined using Rutherford Backscattering Spectrometry (RBS), and the resistivity versus temperature curves were obtained using a four-point probe method. We find that the zero-resistance temperature can be greatly increased after implantation and reannealing, and that the ion beam modification technique described here provides a powerful means for optimizing the thin film superconducting properties.

Dopants in LiNbO3: Lattice Site Location, Ion Implantation and Epitaxial Regrowth

1991 ◽  
Vol 244 ◽  
Author(s):  
L. Rebouta ◽  
J. C. Soares ◽  
M. F. Da Silva ◽  
J. A. Sanz-Garcia ◽  
E. Dieguez ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Integrated Optics ◽  
Lattice Site ◽  
Ion Beam ◽  
Lattice Location ◽  
Integrated Optics Devices ◽  
Site Location ◽  
Co Doping ◽  
Epitaxial Regrowth

ABSTRACTIon-beam/channeling data for the lattice location of Ti, Hf, Er and Nd in LiNbO3 and LiNbO3: Mg are presented. These impurities are relevant in relation to waveguide and integrated optics devices. It is shown that co-doping with Mg markedly influences the lattice location observed in LiNbO3. The amorphization and recrystalization process following Hf implantation and annealing are also discussed.

Lattice Site of Helium Implanted in Si and Diamond

1992 ◽  
Vol 279 ◽  
Author(s):  
William R. Allen
Keyword(s):  
Nuclear Reaction ◽  
Single Crystals ◽  
Lattice Site ◽  
Rutherford Backscattering Spectrometry ◽  
Angular Distributions ◽  
Nuclear Reaction Analysis ◽  
Major Fraction ◽  
Random Lattice ◽  
Tetrahedral Interstice ◽  
Ion Channeling

ABSTRACTSingle crystals of silicon and diamond were implanted at 300K with 70 keV 3He. Ion channeling analyses were executed by application of Rutherford backscattering spectrometry and nuclear reaction analysis. Helium exhibits a non-random lattice site in the channeling angular distributions for silicon and diamond. A major fraction of the implanted 3He was qualitatively identified to be near to the tetrahedral interstice in both materials.

Ion Beam Synthesis of IrSi3 by 1-MeV Ir Ion Implantation into Si(111)

1993 ◽  
Vol 320 ◽  
Author(s):  
T. P. Sjoreen ◽  
H.- J. Hinneberg
Keyword(s):  
Ion Implantation ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Processing Parameters ◽  
Cross Sectional ◽  
Ion Channeling ◽  
Transmission Electron ◽  
Nearly Continuous ◽  
Substrate Temperatures ◽  
Different Doses

ABSTRACTThe formation of a Si/IrSi3/Si heterostructurie by 1-MeV Ir ion implantation and subsequent annealing has been studied for different doses (0.1-2.25 × 1017 Ir/cm2), substrate temperatures (450°-600°C) and annealing temperatures (1000°-1200°C) using Rutherford backscattering spectrometry, ion channeling and cross-sectional transmission electron microscopy. The heterostructure formation is observed to depend strongly on the processing conditions. The best structure, nearly continuous and precipitate-free, is obtained by implanting 1.8-2.0× 1017 1r/cm2 at a substrate temperature of 550°C and annealing at 1100°C for 5 h. A stoichiometric IrSi3 layer can also be produced by furnace annealing at 1150°C for 1 h or by rapid-thermal-annealing at 1200°C for 3 min. Other substrate temperatures generally lead to a structure with a discontinuous IrSi3 layer frequently interrupted by large surface precipitates or islands. The origin of these islands, as well as the dependence of the heterostructure on processing parameters, is discussed.

scholarly journals NITROGEN LATTICE LOCATION IN MOVPE GROWN Ga1-xInxNyAs1-y FILMS USING ION BEAM CHANNELING

2006 ◽  
Vol 16 (03n04) ◽  
pp. 231-237
Author(s):  
TAKUYA NEBIKI ◽  
TADASHI NARUSAWA ◽  
AKIKO KUMAGAI ◽  
HIDEYUKI DOI ◽  
TADASHI SAITO ◽  
...  
Keyword(s):  
Nuclear Reaction ◽  
Gaas Substrate ◽  
Lattice Site ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Local Strain ◽  
Lattice Location ◽  
Nuclear Reaction Analysis ◽  
Substitutional Site

We have investigated the nitrogen lattice location in MOVPE grown Ga 1- x In x N y As 1- y with x = 0.07 and y = 0.025 by means of ion beam channeling technique. In this system, the lattice constant of the Ga 1- x In x N y As 1- y film is equal to GaAs lattice. Therefore, we can grow apparently no strain, high quality and very thick GaInNAs film on GaAs substrate. The quality of the films as well as the lattice location of In and N were characterized by channeling Rutherford backscattering spectrometry and nuclear reaction analysis using 3.95 MeV He 2+ beam. The fraction of substitutional nitrogen in the film was measured using the 14 N (α, p )17 O endothermic nuclear reaction. Our results indicate that more than 90% of In and N atoms are located the substitutional site, however, N atoms are slightly displaced by ~0.2 Å from the lattice site. We suggest that the GaInNAs film has a local strain or point defects around the N atoms.

Ion Beam Synthesis of IrSi3 by 1-MeV Ir Ion Implantation into Si(111)

1993 ◽  
Vol 316 ◽  
Author(s):  
T. P. Sjoreen ◽  
H.-J. Hinneberg
Keyword(s):  
Ion Implantation ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Processing Parameters ◽  
Cross Sectional ◽  
Ion Channeling ◽  
Transmission Electron ◽  
Nearly Continuous ◽  
Substrate Temperatures ◽  
Different Doses

ABSTRACTThe formation of a Si/IrSi3/Si heterostructure by 1-MeV Ir ion implantation and subsequent annealing has been studied for different doses (0.1-2.25 × 1017 Ir/cm2), substrate temperatures (450°-600°C) and annealing temperatures (1000°-1200°C) using Rutherford backscattering spectrometry, ion channeling and cross-sectional transmission electron microscopy. The heterostructure formation is observed to depend strongly on the processing conditions. The best structure, nearly continuous and precipitate-free, is obtained by implanting 1.8-2.0 × 1017 Ir/cm2 at a substrate temperature of 550°C and annealing at 1100°C for 5 h. A stoichiometric IrSi3 layer can also be produced by furnace annealing at 1150°C for 1 h or by rapid-thermal-annealing at 1200°C for 3 min. Other substrate temperatures generally lead to a structure with a discontinuous IrSi3 layer frequently interrupted by large surface precipitates or islands. The origin of these islands, as well as the dependence of the heterostructure on processing parameters, is discussed.

scholarly journals A New High-Throughput Focused MeV Ion-Beam Analysis Setup

Instruments ◽  
2021 ◽  
Vol 5 (1) ◽  
pp. 10
Author(s):  
Sören Möller ◽  
Daniel Höschen ◽  
Sina Kurth ◽  
Gerwin Esser ◽  
Albert Hiller ◽  
...  
Keyword(s):  
Gamma Ray ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Complete Analysis ◽  
Nuclear Reaction Analysis ◽  
Beam Optics ◽  
Single Measurement ◽  
Ion Beam Analysis ◽  
Beam Analysis ◽  
Technical Solutions

The analysis of material composition by ion-beam analysis (IBA) is becoming a standard method, similar to electron microscopy. A pool of IBA methods exists, from which the combination of particle-induced-X-ray emission (PIXE), particle induced gamma-ray analysis (PIGE), nuclear-reaction-analysis (NRA), and Rutherford-backscattering-spectrometry (RBS) provides the most complete analysis over the whole periodic table in a single measurement. Yet, for a highly resolved and accurate IBA analysis, a sophisticated technical setup is required integrating the detectors, beam optics, and sample arrangement. A new end-station developed and installed in Forschungszentrum Jülich provides these capabilities in combination with high sample throughput and result accuracy. Mechanical tolerances limit the device accuracy to 3% for RBS. Continuous pumping enables 5*10−8 mbar base pressure with vibration amplitudes < 0.1 µm. The beam optics achieves a demagnification of 24–34, suitable for µ-beam analysis. An in-vacuum manipulator enables scanning 50 × 50 mm² sample areas with 10 nm accuracy. The setup features the above-mentioned IBA detectors, enabling a broad range of analysis applications such as the operando analysis of batteries or the post-mortem analysis of plasma-exposed samples with up to 3000 discrete points per day. Custom apertures and energy resolutions down to 11 keV enable separation of Fe and Cr in RBS. This work presents the technical solutions together with the quantification of these challenges and their success in the form of a technical reference.

Doping of GaN by ion implantation

2000 ◽  
Vol 650 ◽  
Author(s):  
Eduardo J. Alves ◽  
C. Liu ◽  
Maria F. da Silva ◽  
José C. Soares ◽  
Rosário Correia ◽  
...  
Keyword(s):  
Optical Properties ◽  
Ion Implantation ◽  
Room Temperature ◽  
Lattice Site ◽  
Helium Temperature ◽  
Site Location ◽  
Structural And Optical Properties ◽  
X Ray ◽  
Er Doped ◽  
Ion Implanted

ABSTRACTIn this work we report the structural and optical properties of ion implanted GaN. Potential acceptors such as Ca and Er were used as dopants. Ion implantation was carried out with the substrate at room temperature and 550 °C, respectively. The lattice site location of the dopants was studied by Rutherford backscattering/channeling combined with particle induced X-ray emission. Angular scans along both [0001] and [1011] directions show that 50% of the Er ions implanted at 550 oC occupy substitutional or near substitutional Ga sites after annealing. For Ca we found only a fraction of 30% located in displaced Ga sites along the [0001] direction. The optical properties of the ion implanted GaN films have been studied by photoluminescence measurements. Er- related luminescence near 1.54 μm is observed under below band gap excitation at liquid helium temperature. The spectra of the annealed samples consist of multiline structures with the sharpest lines found in GaN until now. The green and red emissions were also observed in the Er doped samples after annealing.

scholarly journals Formation of Buried Epitaxial Si-Ge Alloy Layers in Si Crystal by High Dose Ge ION Implantation

1991 ◽  
Vol 235 ◽  
Author(s):  
Kin Man Yu ◽  
Ian G. Brown ◽  
Seongil Im
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Lattice Mismatch ◽  
Solid Phase ◽  
Metal Vapor ◽  
Ion Source ◽  
Vacuum Arc ◽  
High Dose ◽  
Solid Phase Epitaxy ◽  
Ion Channeling

ABSTRACTWe have synthesized single crystal Si1−xGex alloy layers in Si <100> crystals by high dose Ge ion implantation and solid phase epitaxy. The implantation was performed using the metal vapor vacuum arc (Mevva) ion source. Ge ions at mean energies of 70 and 100 keV and with doses ranging from 1×1016 to to 7×1016 ions/cm2 were implanted into Si <100> crystals at room temperature, resulting in the formation of Si1−xGex alloy layers with peak Ge concentrations of 4 to 13 atomic %. Epitaxial regrowth of the amorphous layers was initiated by thermal annealing at temperatures higher than 500°C. The solid phase epitaxy process, the crystal quality, microstructures, interface morphology and defect structures were characterized by ion channeling and transmission electron microscopy. Compositionally graded single crystal Si1−xGex layers with full width at half maximum ∼100nm were formed under a ∼30nm Si layer after annealing at 600°C for 15 min. A high density of defects was found in the layers as well as in the substrate Si just below the original amorphous/crystalline interface. The concentration of these defects was significantly reduced after annealing at 900°C. The kinetics of the regrowth process, the crystalline quality of the alloy layers, the annealing characteristics of the defects, and the strains due to the lattice mismatch between the alloy and the substrate are discussed.

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