Pulsed Laser-Induced Crystallization and Amorphization of SiGe Films.

1992 ◽  
Vol 258 ◽  
Author(s):  
T. Sameshima ◽  
S. Usui
Keyword(s):  
Electrical Conductivity ◽  
Band Gap ◽  
Silicon Germanium ◽  
Carrier Mobility ◽  
Pulsed Laser ◽  
Nucleation Density ◽  
High Electrical Conductivity ◽  
Germanium Alloy ◽  
Si Films ◽  
Induced Crystallization

ABSTRACTPulsed laser-induced melting followed by crystallization and amorphization were studied on silicon-germanium alloy (SiGe) films. Although amorphization was achieved on SiGe films, it was not observed in pure Ge films. Crystalline nucleation density in homogeneous solidification increased as Ge concentration increased. It was 1×1024m-3for Si0.22Ge0.78 films, while it was 4×1022m-3 for pUre si films. Electrical conductivity of laser polycrystallized films increased as Ge concentration increased. It had a maximum of 1 S/cm when Ge concentration was 0.78. This high electrical conductivity would be brought about by the increase of carrier mobility as well as the reduction of the band gap.

New oxide phase Cd1−xYxSb2O6with a wide band gap and high electrical conductivity

1993 ◽  
Vol 63 (24) ◽  
pp. 3335-3337 ◽  
Author(s):  
Kazuhiko Yanagawa ◽  
Yoshimichi Ohki ◽  
Naoyuki Ueda ◽  
Takahisa Omata ◽  
Takuya Hashimoto ◽  
...  
Keyword(s):  
Electrical Conductivity ◽  
Band Gap ◽  
Wide Band ◽  
Oxide Phase ◽  
High Electrical Conductivity ◽  
Wide Band Gap

New Oxide Phase $\bf Cd_{2(1-{\ninmbi x})}Y_{2{\ninmbi x}}Sb_{2}O_{7}$ Pyrochlore with a Wide Band Gap and High Electrical Conductivity

1994 ◽  
Vol 33 (Part 2, No. 2B) ◽  
pp. L238-L240 ◽  
Author(s):  
Kazuhiko Yanagawa ◽  
Yoshimichi Ohki ◽  
Takahisa Omata ◽  
Hideo Hosono ◽  
Naoyuki Ueda ◽  
...  
Keyword(s):  
Electrical Conductivity ◽  
Band Gap ◽  
Wide Band ◽  
Oxide Phase ◽  
High Electrical Conductivity ◽  
Wide Band Gap

The External Crystal Structure and Electronic Structure are Simulated about Ge0.6Si0.4 Quantum Dots

2016 ◽  
Vol 852 ◽  
pp. 329-335
Author(s):  
Zhi Ke Gao ◽  
Chong Wang ◽  
Yu Yang ◽  
Jie Yang ◽  
Li Qiao Chen
Keyword(s):  
Quantum Dots ◽  
Electronic Structure ◽  
Band Gap ◽  
Silicon Germanium ◽  
Density Functional ◽  
Simulation Method ◽  
Dynamics Simulation ◽  
Band Shift ◽  
Functional Theory ◽  
Germanium Alloy

The alloy Ge0.6Si0.4 quantum dots were studied by using density functional theory. The change of the electronic structure of each crystal which grown in different simulation temperature condition were investigated by molecular dynamics simulation method. The results indicate that quantum dots of silicon germanium alloy occupy the narrow band gap of each crystal face from low to high temperature conditions. Since the atomic density and crystal configuration is different, the band gap values are relatively different. The mechanism of dielectric constant transition is well explained based on the inter-band and in-band shift of band structure.

Wide-Range Band-Gap Tuning and High Electrical Conductivity in La- and Pb-Doped SrSnO3 Epitaxial Films

2019 ◽  
Vol 11 (28) ◽  
pp. 25605-25612 ◽  
Author(s):  
Qiang Gao ◽  
Kaifeng Li ◽  
Li Zhao ◽  
Kaiyin Zhang ◽  
Hong Li ◽  
...  
Keyword(s):  
Electrical Conductivity ◽  
Band Gap ◽  
Epitaxial Films ◽  
High Electrical Conductivity ◽  
Wide Range ◽  
Band Gap Tuning

scholarly journals High electrical conductivity and carrier mobility in oCVD PEDOT thin films by engineered crystallization and acid treatment

2018 ◽  
Vol 4 (9) ◽  
pp. eaat5780 ◽  
Author(s):  
Xiaoxue Wang ◽  
Xu Zhang ◽  
Lei Sun ◽  
Dongwook Lee ◽  
Sunghwan Lee ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Radio Frequency Identification ◽  
Acid Treatment ◽  
Carrier Mobility ◽  
Carrier Transport ◽  
Great Promise ◽  
High Electrical Conductivity ◽  
High Carrier Mobility ◽  
High Carrier

Air-stable, lightweight, and electrically conductive polymers are highly desired as the electrodes for next-generation electronic devices. However, the low electrical conductivity and low carrier mobility of polymers are the key bottlenecks that limit their adoption. We demonstrate that the key to addressing these limitations is to molecularly engineer the crystallization and morphology of polymers. We use oxidative chemical vapor deposition (oCVD) and hydrobromic acid treatment as an effective tool to achieve such engineering for conducting polymer poly(3,4-ethylenedioxythiophene) (PEDOT). We demonstrate PEDOT thin films with a record-high electrical conductivity of 6259 S/cm and a remarkably high carrier mobility of 18.45 cm2V−1s−1by inducing a crystallite-configuration transition using oCVD. Subsequent theoretical modeling reveals a metallic nature and an effective reduction of the carrier transport energy barrier between crystallized domains in these thin films. To validate this metallic nature, we successfully fabricate PEDOT-Si Schottky diode arrays operating at 13.56 MHz for radio frequency identification (RFID) readers, demonstrating wafer-scale fabrication compatible with conventional complementary metal-oxide semiconductor (CMOS) technology. The oCVD PEDOT thin films with ultrahigh electrical conductivity and high carrier mobility show great promise for novel high-speed organic electronics with low energy consumption and better charge carrier transport.

Band gap tuning and high electrical conductivity in amorphous and polycrystalline films of the Cu[sub x](CdTe)[sub y]O[sub z] system

2006 ◽  
Vol 100 (11) ◽  
pp. 113713 ◽  
Author(s):  
S. Jiménez-Sandoval ◽  
G. E. Garnett-Ruiz ◽  
J. Santos-Cruz ◽  
O. Jiménez-Sandoval ◽  
G. Torres-Delgado ◽  
...  
Keyword(s):  
Electrical Conductivity ◽  
Band Gap ◽  
High Electrical Conductivity ◽  
Polycrystalline Films ◽  
Band Gap Tuning

Band gap engineering of MnO2 through in situ Al-doping for applicable pseudocapacitors

RSC Advances ◽  
2016 ◽  
Vol 6 (17) ◽  
pp. 13914-13919 ◽  
Author(s):  
Tianqi Li ◽  
Jiabin Wu ◽  
Xu Xiao ◽  
Bingyan Zhang ◽  
Zhimi Hu ◽  
...  
Keyword(s):  
Electrical Conductivity ◽  
Band Gap ◽  
Chemical Activity ◽  
High Electrical Conductivity ◽  
Al Doping ◽  
Band Gap Engineering

Band gap engineering was achieved by in situ doping method for high electrical conductivity and chemical activity of MnO2.

scholarly journals A New 3D Printing System of Poly(3,4-ethylenedioxythiophene) for Realizing a High Electrical Conductivity and Fine Processing Resolution

Micromachines ◽  
2020 ◽  
Vol 11 (12) ◽  
pp. 1120
Author(s):  
Katsumi Yamada ◽  
Junji Sone
Keyword(s):  
Electrical Conductivity ◽  
3D Printing ◽  
Light Source ◽  
Mixed State ◽  
Pulsed Laser ◽  
Objective Lens ◽  
High Electrical Conductivity ◽  
Oil Immersion ◽  
Printing System ◽  
Micro Structures

Micro-nano 3D printing of the conductive 3,4-ethylenedioxythiophene polymer (PEDOT) was performed in this study. An oil immersion objective lens was introduced into the 3D photofabrication system using a femtosecond pulsed laser as the light source. As a result, the processing resolution in the horizontal and vertical directions was improved in comparison to our previous study. A relatively high electrical conductivity (3500 S/cm) was found from the obtained 3D PEDOT micro-structures. It is noteworthy that the high conductivity of the PEDOT was obtained in the mixed state with an insulating Nafion sheet.

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