Reactions at the Titanium-Silicon Interface Studied Using Hot-Stage Tem

1992 ◽  
Vol 260 ◽  
Author(s):  
Amol Kirtikar ◽  
Robert Sinclair
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Phase Transformations ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Titanium Thin Films ◽  
Sputter Deposited ◽  
Titanium Silicon ◽  
Silicon Interface

ABSTRACTThe interaction of titanium thin films sputter-deposited onto single crystal silicon was studied by in situ heating experiments within the TEM. Reactions at the Ti-Si interface including amorphization, crystallization, allotropie phase transformations and agglomeration have been observed in real time and recorded on videotape. Interpretation of these recordings can yield a wealth of information on the silicidation process.

The Use of Energy Dispersive Diffractometry to Measure the Thickness of Metal and Glass Thin Films

1981 ◽  
Vol 25 ◽  
pp. 365-371
Author(s):  
Glen A. Stone
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Substrate Material ◽  
Silicon Wafers ◽  
Energy Dispersive ◽  
Crystal Silicon ◽  
X Ray ◽  
Phosphosilicate Glass ◽  
Film Substrate

This paper presents a new method to measure the thickness of very thin films on a substrate material using energy dispersive x-ray diffractometry. The method can be used for many film-substrate combinations. The specific application to be presented is the measurement of phosphosilicate glass films on single crystal silicon wafers.

T0302-2-6 In-situ TEM Experiment of Tensile Testing for Single-Crystal-Silicon Thin Film

2010 ◽  
Vol 2010.8 (0) ◽  
pp. 263-264
Author(s):  
Taeko ANDO ◽  
Hidekazu Ishihara ◽  
Masahiro Nakajima ◽  
Shigeo Arai ◽  
Toshio Fukuda ◽  
...  
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Tensile Testing ◽  
Single Crystal Silicon ◽  
In Situ Tem ◽  
Silicon Thin Film ◽  
Crystal Silicon
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