Temperature dependent EBIC and deep level transient spectroscopy investigation of different types of misfit-dislocations at MOVPE grown GaAs/InGaAs/GaAs-single-quantum wells

1996 ◽  
Vol 42 (1-3) ◽  
pp. 77-81 ◽  
Author(s):  
L. Panepinto ◽  
U. Zeimer ◽  
W. Seifert ◽  
M. Seibt ◽  
F. Bugge ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Misfit Dislocations ◽  
Single Quantum ◽  
Temperature Dependent ◽  
Different Types ◽  
Transient Spectroscopy

scholarly journals Conduction band offsets in CdZnSSe/ZnSSe single quantum wells measured by deep level transient spectroscopy

1996 ◽  
Vol 68 (25) ◽  
pp. 3591-3593 ◽  
Author(s):  
P. F. Baude ◽  
M. A. Haase ◽  
G. M. Haugen ◽  
K. K. Law ◽  
T. J. Miller ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Conduction Band ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Single Quantum ◽  
Band Offsets ◽  
Transient Spectroscopy

Transport Properties and Conduction Band Offset of n-ZnO/n-6H-SiC Heterostructures

2006 ◽  
Vol 957 ◽  
Author(s):  
Yahya Alivov ◽  
Xiao Bo ◽  
Fan Qian ◽  
Daniel Johnstone ◽  
Cole Litton ◽  
...  
Keyword(s):  
Conduction Band ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Band Offset ◽  
Measured Temperature ◽  
Temperature Dependent ◽  
Conduction Band Offset ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Transient Spectroscopy

ABSTRACTThe conduction band offset of n-ZnO/n-6H-SiC heterostructures fabricated by rf-sputtered ZnO on commercial n-type 6H-SiC substrates has been measured. Temperature dependent current-voltage characteristics, photocapacitance, and deep level transient spectroscopy measurements showed the conduction band offsets to be 1.25 eV, 1.1 eV, and 1.22 eV, respectively.

Deep level transient spectroscopy of AlxGa1 xAs/GaAs single-quantum-well lasers

2004 ◽  
Vol 19 (7) ◽  
pp. 897-901 ◽  
Author(s):  
K Zdansky ◽  
V Gorodynskyy ◽  
J Kosíková ◽  
A Rudra ◽  
E Kapon ◽  
...  
Keyword(s):  
Quantum Well ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Quantum Well Lasers ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Transient Spectroscopy

Thermal hole emission from Si/Si1−xGex/Si quantum wells by deep level transient spectroscopy

1995 ◽  
Vol 78 (9) ◽  
pp. 5439-5447 ◽  
Author(s):  
O. Chretien ◽  
R. Apetz ◽  
L. Vescan ◽  
A. Souifi ◽  
H. Lüth ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Transient Spectroscopy

Effect of NO Annealing on 6H- and 4H-SiC MOS Interface States

2010 ◽  
Vol 645-648 ◽  
pp. 499-502 ◽  
Author(s):  
Alberto F. Basile ◽  
John Rozen ◽  
X.D. Chen ◽  
Sarit Dhar ◽  
John R. Williams ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Cross Section ◽  
Deep Level Transient Spectroscopy ◽  
Capture Cross Section ◽  
Deep Level ◽  
Capture Cross ◽  
Temperature Dependent ◽  
Band Energy ◽  
Transient Spectroscopy ◽  
Semiconductor Traps

The electrical properties of the SiC/SiO2 interface resulting from oxidation of the n-type 6H-SiC polytype were studied by hi-lo CV, temperature dependent CV and constant capacitance deep level transient spectroscopy (CCDLTS) techniques. Several trap species differing in energy and capture cross section were identified. A trap distribution at 0.5 eV below the 6H-SiC conduction band energy and a shallower density of states in both the 6H and 4H polytyes are passivated by post-oxidation NO annealing. However, other ultra-shallow and deeper defect distributions remain after nitridation. The latter may originate from semiconductor traps.

Hole confinement in boron δ-doped silicon quantum wells studied by deep-level transient spectroscopy

1996 ◽  
Vol 54 (4) ◽  
pp. 2662-2666 ◽  
Author(s):  
Jian-hong Zhu ◽  
Da-wei Gong ◽  
Bo Zhang ◽  
Fang Lu ◽  
Chi Sheng ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Doped Silicon ◽  
Transient Spectroscopy ◽  
Hole Confinement
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