Molecular Beam Epitaxy Growth and Structural Characterization of Si/GaAs Superlattices

1992 ◽  
Vol 263 ◽  
Author(s):  
R.J. Matyi ◽  
H.J. Gillespie ◽  
G.E. Crook ◽  
J.K. Wade
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
High Energy ◽  
Structural Quality ◽  
Molecular Beam Epitaxy Growth ◽  
X Ray Diffraction ◽  
Superlattice Structure ◽  
Dynamical Simulation ◽  
Diffraction Patterns ◽  
High Level

ABSTRACTThe growth of high quality Si/GaAs superlattices on GaAs substrates using molecular beam epitaxy is described. A typical superlattice structure consisted of ten periods of thin (<5Å) layers of pseudomorphic silicon alternating with thick GaAs layers; typical GaAs thicknesses range from 100Å to 1850Å. In situ reflection high energy electron diffraction analysis of the structures during growth showed the silicon layers developed a (3 ×1) reconstruction, while the GaAs exhibited a (4×2)→(3×2)→(3×1)→(2×4) reconstruction sequence. Both observations agree with prior studies of the growth of embedded silicon in GaAs/Si/GaAs heterostructures. X-ray diffraction using the (004) reflection showed sharp and intense satellite peaks (out to 22 orders in one case), indicating a high level of structural quality. Very good agreement has been obtained between observed diffraction patterns and those calculated via dynamical simulation.

A Study on the Growth of Cubic GaN Films Using an AlGaAs Buffer Layer Grown on GaAs (100) by Plasma-Assisted Molecular Beam Epitaxy

2000 ◽  
Vol 639 ◽  
Author(s):  
Ryuhei Kimura ◽  
Kiyoshi Takahashi ◽  
H. T. Grahn
Keyword(s):  
Molecular Beam Epitaxy ◽  
Buffer Layer ◽  
Molecular Beam ◽  
High Energy ◽  
Rf Plasma ◽  
Cubic Phase ◽  
X Ray Diffraction ◽  
X Ray ◽  
Cubic Gan

ABSTRACTAn investigation of the growth mechanism for RF-plasma assisted molecular beam epitaxy of cubic GaN films using a nitrided AlGaAs buffer layer was carried out by in-situ reflection high energy electron diffraction (RHEED) and high resolution X-ray diffraction (HRXRD). It was found that hexagonal GaN nuclei grow on (1, 1, 1) facets during nitridation of the AlGaAs buffer layer, but a highly pure, cubic-phase GaN epilayer was grown on the nitrided AlGaAs buffer layer.

Bi-Based Superconducting Multilayers Obtained by Molecular Beam Epitaxy

1999 ◽  
Vol 13 (09n10) ◽  
pp. 991-996
Author(s):  
M. Salvato ◽  
C. Attanasio ◽  
G. Carbone ◽  
T. Di Luccio ◽  
S. L. Prischepa ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Xrd Analysis ◽  
High Energy ◽  
X Ray Diffraction ◽  
One Dimensional ◽  
X Ray ◽  
Diffraction Model ◽  
Different Thickness

High temperature superconducting multilayers have been obtained depositing Bi2Sr2CuO6+δ(2201) and ACuO2 layers, where A is Ca or Sr, by Molecular Beam Epitaxy (MBE) on MgO and SrTiO3 substrates. The samples, formed by a sequence of 2201/ACuO2 bilayers, have different thickness of ACuO2 layers while the thickness of the 2201 layers is kept constant. The surface structure of each layer has been monitored by in situ Reflection High Energy Electron Diffraction (RHEED) analysis which has confirmed a 2D nucleation growth. X-ray diffraction (XRD) analysis has been used to confirm that the layered structure has been obtained. Moreover, one-dimensional X-ray kinematic diffraction model has been developed to interpret the experimental data and to estimate the period of the multilayers. Resistive measurements have shown that the electrical properties of the samples strongly depend on the thickness of the ACuO2 layers.

scholarly journals Alloy formation during molecular beam epitaxy growth of Si-doped InAs nanowires on GaAs[111]B

2013 ◽  
Vol 46 (4) ◽  
pp. 893-897 ◽  
Author(s):  
Anton Davydok ◽  
Torsten Rieger ◽  
Andreas Biermanns ◽  
Muhammad Saqib ◽  
Thomas Grap ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Lattice Mismatch ◽  
Molecular Beam Epitaxy Growth ◽  
Alloy Formation ◽  
X Ray Diffraction ◽  
Out Of Plane ◽  
Inas Nanowires ◽  
Vertically Aligned ◽  
Si Doped

Vertically aligned InAs nanowires (NWs) doped with Si were grown self-assisted by molecular beam epitaxy on GaAs[111]B substrates covered with a thin SiO x layer. Using out-of-plane X-ray diffraction, the influence of Si supply on the growth process and nanostructure formation was studied. It was found that the number of parasitic crystallites grown between the NWs increases with increasing Si flux. In addition, the formation of a Ga0.2In0.8As alloy was observed if the growth was performed on samples covered by a defective oxide layer. This alloy formation is observed within the crystallites and not within the nanowires. The Ga concentration is determined from the lattice mismatch of the crystallites relative to the InAs nanowires. No alloy formation is found for samples with faultless oxide layers.

Molecular Beam Epitaxial Growth of Nonpolar a-plane InN/ GaN Heterostructures

2012 ◽  
Vol 1396 ◽  
Author(s):  
Mohana K. Rajpalke ◽  
Thirumaleshwara N. Bhat ◽  
Basanta Roul ◽  
Mahesh Kumar ◽  
S. B. Krupanidhi
Keyword(s):  
Schottky Barrier ◽  
Molecular Beam ◽  
Schottky Barrier Height ◽  
High Energy ◽  
Scanning Electron Micrographs ◽  
X Ray Diffraction ◽  
X Ray ◽  
Molecular Beam Epitaxial ◽  
Diffraction Patterns ◽  
Molecular Beam Epitaxial Growth

ABSTRACTNonpolar a-plane InN/GaN heterostructures were grown by plasma assisted molecular beam epitaxy. The growth of nonpolar a- plane InN / GaN heterostructures were confirmed by high resolution x-ray diffraction study. Reflection high energy electron diffraction patterns show the reasonably smooth surface of a-plane GaN and island-like growth for nonpolar a-plane InN film, which is further confirmed by scanning electron micrographs. An absorption edge in the optical spectra has the energy of 0.74 eV, showing blueshifts from the fundamental band gap of 0.7 eV. The rectifying behavior of the I-V curve indicates the existence of Schottky barrier at the InN and GaN interface. The Schottky barrier height (φb) and the ideality factor (η) for the InN/GaN heterostructures found to be 0.58 eV and 2.05 respectively.

Epitaxial Dy2O3 Thin Films Grown on Ge(100) Substrates by Molecular Beam Epitaxy

2010 ◽  
Vol 1252 ◽  
Author(s):  
Md. Nurul Kabir Bhuiyan ◽  
Mariela Menghini ◽  
Christel Dieker ◽  
Jin Won Seo ◽  
Jean-Pierre Locquet ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Photoelectron Spectroscopy ◽  
Molecular Beam ◽  
High Mobility ◽  
High Energy ◽  
Epitaxial Relationship ◽  
Dysprosium Oxide ◽  
X Ray ◽  
Force Microscopy ◽  
Diffraction Patterns

AbstractDysprosium oxide (Dy2O3) films are grown epitaxially on high mobility Ge(100) substrates by molecular beam epitaxy system. Reflection high energy electron diffraction patterns and X-ray diffraction spectra show that single crystalline cubic Dy2O3 films are formed on Ge(100) substrates. The epitaxial-relationship is identified as Dy2O3 (110)║Ge(100) and Dy2O3 [001]║Ge[011]. Atomic force microscopy results show that the surface of the Dy2O3 film is uniform, flat and smooth with root mean square surface roughness of about 4.6Å. X-ray photoelectron spectroscopy including depth profiles confirms the composition of the films being close to Dy2O3. TEM measurements reveal a sharp, crystalline interface between the oxide and Ge.

scholarly journals High carrier mobility in single-crystal PtSe2 grown by molecular beam epitaxy on ZnO(0001)

2D Materials ◽  
2021 ◽  
Author(s):  
Frédéric Bonell ◽  
Alain Marty ◽  
Céline Vergnaud ◽  
Vincent Consonni ◽  
Hanako Okuno ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
High Mobility ◽  
Structural Quality ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
High Carrier Mobility ◽  
Insulating Substrates

Abstract PtSe2 is attracting considerable attention as a high mobility two-dimensional material with envisioned applications in microelectronics, photodetection and spintronics. The growth of high quality PtSe2 on insulating substrates with wafer-scale uniformity is a prerequisite for electronic transport investigations and practical use in devices. Here, we report the growth of highly oriented few-layers PtSe2 on ZnO(0001) by molecular beam epitaxy. The crystalline structure of the films is characterized with electron and X-ray diffraction, atomic force microscopy and transmission electron microscopy. The comparison with PtSe2 layers grown on graphene, sapphire, mica, SiO2 and Pt(111) shows that among insulating substrates, ZnO(0001) yields films of superior structural quality. Hall measurements performed on epitaxial ZnO/PtSe2 with 5 monolayers of PtSe2 show a clear semiconducting behaviour and a high mobility in excess of 200 cm2V-1s-1 at room temperature and up to 447 cm2V-1s-1 at low temperature.

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