Pulsed Laser Deposition of CdTe, HgCdTe, and β-SiC Thin Films on Silicon

ABSTRACTThe successful methods for laser ablation and deposition of epitaxial thin films of metal oxides, especially the high-temperature superconductors (HTSC), have been adapted to pulsed laser deposition (PLD) of the narrow-band compound semiconductor HgCdTe, and the wide-band semiconductor β-SiC. Useful film quality is readily obtained in both cases: the HgCdTe films on CdTe wafers function in IR photodetection and the 3-SiC is epitaxial on both Si (100) and (111) wafers.