The Preparation of C60/C70 and the Characterization by Different Techniques

1992 ◽  
Vol 270 ◽  
Author(s):  
P. Häussler ◽  
H. Bestgen ◽  
H.-U. ter Meer
Keyword(s):  
Electron Microscopy ◽  
Mass Spectrometry ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Single Crystals ◽  
Absorption Spectra ◽  
Preparation Conditions ◽  
Transmission Electron ◽  
Method Evidence ◽  
Fcc Structure

ABSTRACTWe report on the preparation of C60/C70 by the arc method. Evidence of monofunctional C60O, and C60-CH2 has been observed by mass spectrometry. Dependent on their preparation conditions, high resolution transmission electron microscopy of crystals consisting of mixtures of C60/C70 show different structure. Needle-like crystals grown from toluene show superlattice formation while single crystals obtained by sublimation have fcc structure. UV-VIS-absorption spectra in toluene are compared to those of films of various thickness and crystallinity.

Can carbon-implanted silicon be applied as wide-bandgap emitter?

1996 ◽  
Vol 11 (7) ◽  
pp. 1653-1658 ◽  
Author(s):  
D. J. Oostra ◽  
J. Politiek ◽  
C. W. T. Bulle-Lieuwma ◽  
D. E. W. Vandenhoudt ◽  
P. C. Zalm
Keyword(s):  
Electron Microscopy ◽  
Mass Spectrometry ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Secondary Ion Mass Spectrometry ◽  
Nanocrystalline Material ◽  
Wide Bandgap ◽  
Transmission Electron ◽  
Secondary Ion ◽  
Anneal Temperature

We examine the formation of Si1-xCx (x = 0.04–0.2) by means of CFy (y = 0,1,3) implantation in p-type Si, for application as a wide-bandgap emitter in a Si heterojunc-tion bipolar transistor. Upon implantation with 2.5 × 1016 CF+/cm2 at 45 keV, and subsequently with 2.5 × 1016 C+/cm2 at 30 keV, an amorphous top layer is formed. Annealing at temperatures up to 900 °C leads to a layer consisting of nanocrystalline material. High resolution transmission electron microscopy and secondary ion mass spectrometry show that a well-defined nanocrystalline/crystalline interface is created at an anneal temperature of 550 °C. At higher temperatures lattice defects start to develop. Preliminary attempts to dope the material via phosphorus or arsenic implantation indicate that temperatures of at least 900 °C are required to activate a fraction of the implanted dopants. This, however, adversely affects the adlayer/substrate interface.

A High Resolution Study of G.P. Zones in Aluminum - 4.2 at % Silver

1982 ◽  
Vol 40 ◽  
pp. 722-723 ◽  
Author(s):  
R. Gronsky
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Computer Simulations ◽  
Structural Characteristics ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Resolution Study

The phenomenon of clustering in Al-Ag alloys has been extensively studied since the early work of Guinierl, wherein the pre-precipitation state was characterized as an assembly of spherical, ordered, silver-rich G.P. zones. Subsequent x-ray and TEM investigations yielded results in general agreement with this model. However, serious discrepancies were later revealed by the detailed x-ray diffraction - based computer simulations of Gragg and Cohen, i.e., the silver-rich clusters were instead octahedral in shape and fully disordered, atleast below 170°C. The object of the present investigation is to examine directly the structural characteristics of G.P. zones in Al-Ag by high resolution transmission electron microscopy.

Transmission Electron Microscopy study of Bi-based superconducting phases

1990 ◽  
Vol 48 (4) ◽  
pp. 50-51
Author(s):  
J.G. Wen ◽  
K.K. Fung
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Single Crystals ◽  
Microscopy Study ◽  
Electron Microscopy Study ◽  
Space Groups ◽  
Superconducting Phases ◽  
Ceramic Samples ◽  
Transmission Electron ◽  
Modulated Structures

Bi-based superconducting phases have been found to be members of a structural series represented by Bi2Sr2Can−1Cun−1On+4, n=1,2,3, and are referred to as 2201, 2212, 2223 phases. All these phases are incommensurate modulated structures. The super space groups are P2/b, NBbmb 2201, 2212 phases respectively. Pb-doped ceramic samples and single crystals and Y-doped single crystals have been studied by transmission electron microscopy.Modulated structures of all Bi-based superconducting phases are in b-c plane, therefore, it is the best way to determine modulated structure and c parameter in diffraction pattern. FIG. 1,2,3 show diffraction patterns of three kinds of modulations in Pb-doped ceramic samples. Energy dispersive X-ray analysis (EDAX) confirms the presence of Pb in the three modulated structures. Parameters c are 3 0.06, 38.29, 30.24Å, ie 2212, 2223, 2212 phases for FIG. 1,2,3 respectively. Their average space groups are all Bbmb.

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