The role of ultra-thin carbon barrier layers for fabrication of La/B4C interferential mirrors: Study by time-of-flight secondary ion mass spectrometry and high-resolution transmission electron microscopy

2015 ◽  
Vol 577 ◽  
pp. 11-16 ◽  
Author(s):  
M.N. Drozdov ◽  
Y.N. Drozdov ◽  
N.I. Chkhalo ◽  
V.N. Polkovnikov ◽  
N.N. Salashchenko ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Mass Spectrometry ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Secondary Ion Mass Spectrometry ◽  
Barrier Layers ◽  
Transmission Electron ◽  
Thin Carbon ◽  
Secondary Ion

Can carbon-implanted silicon be applied as wide-bandgap emitter?

1996 ◽  
Vol 11 (7) ◽  
pp. 1653-1658 ◽  
Author(s):  
D. J. Oostra ◽  
J. Politiek ◽  
C. W. T. Bulle-Lieuwma ◽  
D. E. W. Vandenhoudt ◽  
P. C. Zalm
Keyword(s):  
Electron Microscopy ◽  
Mass Spectrometry ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Secondary Ion Mass Spectrometry ◽  
Nanocrystalline Material ◽  
Wide Bandgap ◽  
Transmission Electron ◽  
Secondary Ion ◽  
Anneal Temperature

We examine the formation of Si1-xCx (x = 0.04–0.2) by means of CFy (y = 0,1,3) implantation in p-type Si, for application as a wide-bandgap emitter in a Si heterojunc-tion bipolar transistor. Upon implantation with 2.5 × 1016 CF+/cm2 at 45 keV, and subsequently with 2.5 × 1016 C+/cm2 at 30 keV, an amorphous top layer is formed. Annealing at temperatures up to 900 °C leads to a layer consisting of nanocrystalline material. High resolution transmission electron microscopy and secondary ion mass spectrometry show that a well-defined nanocrystalline/crystalline interface is created at an anneal temperature of 550 °C. At higher temperatures lattice defects start to develop. Preliminary attempts to dope the material via phosphorus or arsenic implantation indicate that temperatures of at least 900 °C are required to activate a fraction of the implanted dopants. This, however, adversely affects the adlayer/substrate interface.

scholarly journals In Situ Correlative Microscopy Combining Transmission Electron Microscopy and Secondary Ion Mass Spectrometry

2018 ◽  
Vol 24 (S1) ◽  
pp. 380-381 ◽  
Author(s):  
Santhana Eswara ◽  
Lluis Yedra ◽  
Alisa Pshenova ◽  
Varun Sarbada ◽  
Jean-Nicolas Audinot ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Mass Spectrometry ◽  
Transmission Electron Microscopy ◽  
Secondary Ion Mass Spectrometry ◽  
Correlative Microscopy ◽  
Transmission Electron ◽  
Ion Mass Spectrometry ◽  
Secondary Ion

Detection of Amorphous Silica in Air-Oxidized Ti3SiC2 at 500–1000°C by NMR and SIMS

2010 ◽  
Vol 434-435 ◽  
pp. 169-172 ◽  
Author(s):  
Wei Kong Pang ◽  
It Meng Low ◽  
J.V. Hanna
Keyword(s):  
Electron Microscopy ◽  
Mass Spectrometry ◽  
Transmission Electron Microscopy ◽  
Amorphous Silica ◽  
Direct Evidence ◽  
Secondary Ion Mass Spectrometry ◽  
Amorphous Sio2 ◽  
Transmission Electron ◽  
First Time ◽  
Secondary Ion

The use of secondary-ion mass spectrometry (SIMS), nuclear magnetic resonance (NMR) and transmission electron microscopy (TEM) to detect the existence of amorphous silica in Ti3SiC2 oxidised at 500–1000°C is described. The formation of an amorphous SiO2 layer and its growth in thickness with temperature was monitored using dynamic SIMS. Results of NMR and TEM verify for the first time the direct evidence of amorphous silica formation during the oxidation of Ti3SiC2 at 1000°C.

Residual damage in B+ and –implanted Si

1985 ◽  
Vol 63 (6) ◽  
pp. 863-869 ◽  
Author(s):  
W. Vandervorst ◽  
D. C. Houghton ◽  
F. R. Shepherd ◽  
M. L. Swanson ◽  
H. H. Plattner ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Mass Spectrometry ◽  
Transmission Electron Microscopy ◽  
Secondary Ion Mass Spectrometry ◽  
Nuclear Reaction Analysis ◽  
Furnace Annealing ◽  
Projected Range ◽  
Transmission Electron ◽  
Residual Damage ◽  
Secondary Ion

The residual damage left after furnace-annealing Si wafers implanted with 30-keV B+ or 120-keV [Formula: see text] ions has been investigated for doses of 3–5 × 1015 ions∙cm−2. Transmission electron microscopy, Rutherford backscattering, and channeling were used to study the morphology and distribution of the damage while the B and F content and their depth distributions were determined by nuclear reaction analysis and secondary-ion mass spectrometry. For B+-implanted samples the residual damage is concentrated in a band at a depth corresponding to the B projected range. For [Formula: see text]-implanted samples the residual damage is located mainly in the region of the as-implanted amorphous–crystalline interface.

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