High-Effective Ion-Implanted 6H-SiC Light Emitting Diodes with λmax=535nm

1992 ◽  
Vol 279 ◽  
Author(s):  
A. V. Suvorov ◽  
P. A. Ivanov ◽  
V. N. Makarov ◽  
D. A. Plotkin ◽  
A. Ioffe
Keyword(s):  
Thermal Annealing ◽  
Annealing Temperature ◽  
Light Emitting Diodes ◽  
Light Power ◽  
Light Emitting ◽  
First Time ◽  
Ion Implanted

ABSTRACTThe p-n structures was formed by the implantation of Al ions into 6H-SiC n-type films and the thermal annealing. An energy of ions was in the range of 40–90 KeV, an annealing temperature -1700–2100K. We investigated the influence of implantation conditions over the defects electroluminescence of the obtained structures.After fabricating contacts and mesa-structures with areas 500–500μm our devices showed under the current of 20 mW:- integral light power 20μW,- λmax=535 nm, δλmax=80nm.For the first time was fabricated the green electroluminescence source on SiC with the value of efficiency approximated to one of the A3B5 structures, and after encapsulating it will be possible to obtain LEDs with an integral light power up to 80–100μW.

scholarly journals Effect of Solvents, Their Mixture and Thermal Annealing on the Performance of Solution Processed Polymer Light-Emitting Diodes

Materials ◽  
2013 ◽  
Vol 6 (5) ◽  
pp. 1994-2006 ◽  
Author(s):  
Mohammad Rezvani ◽  
Farid Farajollahi ◽  
Alireza Nikfarjam ◽  
Parisa Bakhtiarpour ◽  
Erfan Saydanzad
Keyword(s):  
Thermal Annealing ◽  
Light Emitting Diodes ◽  
Solution Processed ◽  
Light Emitting ◽  
Effect Of Solvents ◽  
Polymer Light Emitting Diodes

scholarly journals Improving the Stability and Performance of Perovskite Light-Emitting Diodes by Thermal Annealing Treatment

2016 ◽  
Vol 28 (32) ◽  
pp. 6906-6913 ◽  
Author(s):  
Jae Choul Yu ◽  
Dae Woo Kim ◽  
Da Bin Kim ◽  
Eui Dae Jung ◽  
Jong Hyun Park ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Light Emitting Diodes ◽  
Annealing Treatment ◽  
Light Emitting ◽  
Thermal Annealing Treatment ◽  
And Performance ◽  
The Stability

Graphene-induced crystal-healing of AlN film by thermal annealing for deep ultraviolet light-emitting diodes

2020 ◽  
Vol 117 (18) ◽  
pp. 181103
Author(s):  
Hongliang Chang ◽  
Bingyao Liu ◽  
Dongdong Liang ◽  
Yaqi Gao ◽  
Jianchang Yan ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Ultraviolet Light ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Aln Film ◽  
Deep Ultraviolet ◽  
Ultraviolet Light Emitting Diodes

scholarly journals Effect of selective ion-implanted p-GaN on the junction temperature of GaN-based light emitting diodes

2009 ◽  
Vol 282 (5) ◽  
pp. 835-838 ◽  
Author(s):  
Yun-Wei Cheng ◽  
Hung-Hsien Chen ◽  
Min-Yung Ke ◽  
Cheng-Pin Chen ◽  
Jian Jang Huang
Keyword(s):  
Light Emitting Diodes ◽  
Junction Temperature ◽  
Light Emitting ◽  
Ion Implanted

Thermal annealing induced high performance light-emitting diodes based on poly(9,9′-dioctyl fluorene)

2003 ◽  
Vol 137 (1-3) ◽  
pp. 1091-1092 ◽  
Author(s):  
Gufeng He ◽  
Yongfang Li ◽  
Tzung-Fang Guo ◽  
Yang Yang
Keyword(s):  
Thermal Annealing ◽  
High Performance ◽  
Light Emitting Diodes ◽  
Light Emitting

scholarly journals Preparation of quantum dots-montmorillonite nanocomposites with strong photoluminescence for light-emitting diodes

RSC Advances ◽  
2017 ◽  
Vol 7 (13) ◽  
pp. 7774-7779 ◽  
Author(s):  
Sen Liang ◽  
Min Liu ◽  
Ding Zhou ◽  
Haoyang Zou ◽  
Yi Liu ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Cdte Qds ◽  
First Time ◽  
Montmorillonite Nanocomposites

CdTe QDs/MMT-Na+ nanocomposites with promising optical properties are used as color convertors in commercial LEDs for the first time.

Synthesis and aggregation-induced emissions of thienyl substituted cyclobutene derivatives

2014 ◽  
Vol 2 (26) ◽  
pp. 5083-5086 ◽  
Author(s):  
Xiaotao Zhang ◽  
Xiuqiang Lu ◽  
Yonggang Zhen ◽  
Jie Liu ◽  
Huanli Dong ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Light Emitting ◽  
Aggregation Induced Emission ◽  
First Time

Thienyl substituted cyclobutenes with aggregation induced emission behaviour have been synthesized for the first time in good selectivity, opening the possibility of cyclobutenes for application in light emitting diodes.

scholarly journals Enhancing the Light-Extraction Efficiency of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes by Optimizing the Diameter and Tilt of the Aluminum Sidewall

Crystals ◽  
2018 ◽  
Vol 8 (11) ◽  
pp. 420 ◽  
Author(s):  
Yung-Min Pai ◽  
Chih-Hao Lin ◽  
Chun-Fu Lee ◽  
Chun-Peng Lin ◽  
Cheng-Huan Chen ◽  
...  
Keyword(s):  
Ultraviolet Light ◽  
High Efficiency ◽  
Light Emitting Diodes ◽  
Extraction Efficiency ◽  
Light Extraction ◽  
Light Extraction Efficiency ◽  
Light Power ◽  
Light Emitting ◽  
Deep Ultraviolet ◽  
Ultraviolet Light Emitting Diodes

To realize high-efficiency AlGaN-based deep-ultraviolet light-emitting diodes (DUV-LEDs), enhancing their light-extraction efficiency (LEE) is crucial. This paper proposes an aluminum-based sidewall reflector structure that could replace the conventional ceramic-based packaging method. We design optimization simulations and experimental results demonstrated the light power output could be enhanced 18.38% of DUV-LEDs packaged with the aluminum-based sidewall.

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