Ion Beam Induced Crystallization of Amorphous Si from NiSi2 Precipitates: An In Situ Study

1992 ◽  
Vol 279 ◽  
Author(s):  
F. Fortuna ◽  
M. -O. Ruault ◽  
H. Bernas ◽  
H. Gu ◽  
C. Colliex
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Ion Beam ◽  
In Situ Study ◽  
Transmission Electron ◽  
Interface Roughening ◽  
Amorphous Si ◽  
Induced Crystallization ◽  
Growth Shape

ABSTRACTBy first growing NiSi2 precipitates in a-Si and then irradiating with a 150 keV Si beam, we have studied ion beam induced epitaxial crystallization (IBIEC) of Si initiated at a-Si/NiSi2 precipitate interfaces. The growth shape and its temperature dependence are studied in-beam via in situ transmission electron microscopy. Interface roughening is evidenced. Preliminary results for the Co-Si system are also reported.

scholarly journals Direct Characterization of the Relation between the Mechanical Response and Microstructure Evolution in Aluminum by Transmission Electron Microscopy In Situ Straining

Materials ◽  
2021 ◽  
Vol 14 (6) ◽  
pp. 1431
Author(s):  
Seiichiro Ii ◽  
Takero Enami ◽  
Takahito Ohmura ◽  
Sadahiro Tsurekawa
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Ion Beam ◽  
Elastic Behavior ◽  
Annealed Specimen ◽  
Displacement Curve ◽  
Dislocation Loops ◽  
Transmission Electron ◽  
Stress Drops

Transmission electron microscopy in situ straining experiments of Al single crystals with different initial lattice defect densities have been performed. The as-focused ion beam (FIB)-processed pillar sample contained a high density of prismatic dislocation loops with the <111> Burgers vector, while the post-annealed specimen had an almost defect-free microstructure. In both specimens, plastic deformation occurred with repetitive stress drops (∆σ). The stress drops were accompanied by certain dislocation motions, suggesting the dislocation avalanche phenomenon. ∆σ for the as-FIB Al pillar sample was smaller than that for the post-annealed Al sample. This can be considered to be because of the interaction of gliding dislocations with immobile prismatic dislocation loops introduced by the FIB. The reloading process after stress reduction was dominated by elastic behavior because the slope of the load–displacement curve for reloading was close to the Young’s modulus of Al. Microplasticity was observed during the load-recovery process, suggesting that microyielding and a dislocation avalanche repeatedly occurred, leading to intermittent plasticity as an elementary step of macroplastic deformation.

In Situ Study of Spinel Ferrite Nanocrystal Growth Using Liquid Cell Transmission Electron Microscopy

2015 ◽  
Vol 27 (23) ◽  
pp. 8146-8152 ◽  
Author(s):  
Wen-I Liang ◽  
Xiaowei Zhang ◽  
Karen Bustillo ◽  
Chung-Hua Chiu ◽  
Wen-Wei Wu ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Spinel Ferrite ◽  
In Situ Study ◽  
Nanocrystal Growth ◽  
Transmission Electron ◽  
Cell Transmission ◽  
Liquid Cell

scholarly journals Sample Preparation Methodologies for In Situ Liquid and Gaseous Cell Analytical Transmission Electron Microscopy of Electropolished Specimens

2016 ◽  
Vol 22 (6) ◽  
pp. 1350-1359 ◽  
Author(s):  
Xiang Li Zhong ◽  
Sibylle Schilling ◽  
Nestor J. Zaluzec ◽  
M. Grace Burke
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Focused Ion Beam ◽  
General Procedure ◽  
Ion Beam ◽  
Metals And Alloys ◽  
Stainless Steel Sample ◽  
Transmission Electron ◽  
Wide Range

AbstractIn recent years, an increasing number of studies utilizing in situ liquid and/or gaseous cell scanning/transmission electron microscopy (S/TEM) have been reported. Because of the difficulty in the preparation of suitable specimens, these environmental S/TEM studies have been generally limited to studies of nanoscale structured materials such as nanoparticles, nanowires, or sputtered thin films. In this paper, we present two methodologies which have been developed to facilitate the preparation of electron-transparent samples from conventional bulk metals and alloys for in situ liquid/gaseous cell S/TEM experiments. These methods take advantage of combining sequential electrochemical jet polishing followed by focused ion beam extraction techniques to create large electron-transparent areas for site-specific observation. As an example, we illustrate the application of this methodology for the preparation of in situ specimens from a cold-rolled Type 304 austenitic stainless steel sample, which was subsequently examined in both 1 atm of air as well as fully immersed in a H2O environment in the S/TEM followed by hyperspectral imaging. These preparation techniques can be successfully applied as a general procedure for a wide range of metals and alloys, and are suitable for a variety of in situ analytical S/TEM studies in both aqueous and gaseous environments.

High-resolution transmission-electron-microscopy study of ultrathin Al-induced crystallization of amorphous Si

2009 ◽  
Vol 24 (11) ◽  
pp. 3294-3299 ◽  
Author(s):  
Zumin Wang ◽  
Lars P.H. Jeurgens ◽  
Jiang Y. Wang ◽  
Fritz Phillipp ◽  
E.J. Mittemeijer
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Depth Profiling ◽  
Bottom Layer ◽  
Microscopy Study ◽  
Layer System ◽  
Transmission Electron ◽  
Amorphous Si ◽  
Induced Crystallization

The process of ultrathin Al-induced crystallization of amorphous Si (a-Si) has been investigated by using high-resolution transmission electron microscopy and Auger electron spectroscopic depth profiling. Ultrathin Al overlayers, with thicknesses of 2.0 and 4.5 nm, have been shown to be capable of inducing full crystallization of an a-Si bottom layer as thick as 40 nm at temperatures as low as 320 °C. After full crystallization of a-Si, the Al of the original 2.0-nm Al overlayer completely moved through the Si layer, leaving a high-purity, large-grained crystalline Si layer above it. Such movement of Al also occurs for the originally 4.5-nm Al overlayer, but in this case the crystallized Si layer is relatively fine-grained and contains ∼5.0 at.% of residual Al nanocrystals distributed throughout the layer. The observations have been interpreted on the basis of sites available for nucleation of crystalline Si in the microstructure of the Al/Si layer system upon annealing.

In Situ Study of Lithiation and Delithiation of MoS2 Nanosheets Using Electrochemical Liquid Cell Transmission Electron Microscopy

Nano Letters ◽  
2015 ◽  
Vol 15 (8) ◽  
pp. 5214-5220 ◽  
Author(s):  
Zhiyuan Zeng ◽  
Xiaowei Zhang ◽  
Karen Bustillo ◽  
Kaiyang Niu ◽  
Christoph Gammer ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Mos2 Nanosheets ◽  
In Situ Study ◽  
Transmission Electron ◽  
Cell Transmission ◽  
Liquid Cell

scholarly journals In Situ Preparation of Pr1-xCaxMnO3 and La1-xSrxMnO3 Catalysts Surface for High-Resolution Environmental Transmission Electron Microscopy

Catalysts ◽  
2019 ◽  
Vol 9 (9) ◽  
pp. 751 ◽  
Author(s):  
Roddatis ◽  
Lole ◽  
Jooss
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Specimen Preparation ◽  
Residual Water ◽  
Environmental Transmission ◽  
Transmission Electron ◽  
Environmental Transmission Electron Microscopy

The study of changes in the atomic structure of a catalyst under chemical reaction conditions is extremely important for understanding the mechanism of their operation. For in situ environmental transmission electron microscopy (ETEM) studies, this requires preparation of electron transparent ultrathin TEM lamella without surface damage. Here, thin films of Pr1-xCaxMnO3 (PCMO, x = 0.1, 0.33) and La1-xSrxMnO3 (LSMO, x = 0.4) perovskites are used to demonstrate a cross-section specimen preparation method, comprised of two steps. The first step is based on optimized focused ion beam cutting procedures using a photoresist protection layer, finally being removed by plasma-etching. The second step is applicable for materials susceptible to surface amorphization, where in situ recrystallization back to perovskite structure is achieved by using electron beam driven chemistry in gases. This requires reduction of residual water vapor in a TEM column. Depending on the gas environment, long crystalline facets having different atomic terminations and Mn-valence state, can be prepared.

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