Heteropolytype Growth of Beta Silicon Carbide on Alpha Silicon Carbide by Low Pressure Chemical Vapor Deposition at 1150 C

ABSTRACTWe report on the low temperature growth of heteropolytype junctions of 3C-SiC on 6H-SiC by low pressure chemical vapor deposition. In this work we have observed the epitaxial layers to be single crystal below a critical thickness limit which depends on growth temperature. Films thicker than this limit are polycrystalline. At 1150 C we have found the critical thickness to be approximately 2500 angstroms.