Silicon Nitride Deposited at Very Low Silane Pressures Using Electron Cyclotron Resonance Plasmas

1992 ◽  
Vol 284 ◽  
Author(s):  
J. R. Flemish ◽  
R. Pfeffer ◽  
W. Buchwald ◽  
K. A. Jones
Keyword(s):  
Refractive Index ◽  
Silicon Nitride ◽  
Microwave Power ◽  
Material Properties ◽  
Cyclotron Resonance ◽  
Total Pressure ◽  
Electron Cyclotron Resonance ◽  
High Quality ◽  
Deposition Rates ◽  
Hydrogen Incorporation

ABSTRACTWe report on the material properties of SiNx:H films deposited using a 2% SiH4/N2 mixture with additional N2 in an ECR reactor. Deposition rates, refractive index, and stoichiometry have been characterized using ellipsometry, Rutherford backscattering spectroscopy, and infrared spectroscopy. Reactor conditions of 2m Torr total pressure, 650W microwave power, and substrate temperature of 250°C result in high quality, stoichiometric silicon nitride. With a SiH4/N2 ratio = 0.003, hydrogen incorporation is approximately 1.5% and the refractive index is nr =2.0. Lower microwave power and a higher SiH4/N2 ratio result in slightly N-rich films which is attributable to increased H-incorporation. Higher total pressure results in significantly enhanced deposition rates, but with greatly increased H and O content.

Deposition of High Quality SiO2 Films Using Teos by ECR Plasma

1995 ◽  
Vol 396 ◽  
Author(s):  
K. Sano ◽  
H. Tamamaki ◽  
M. Nomura ◽  
S. Wickramanayaka ◽  
Y. Nakanishi ◽  
...  
Keyword(s):  
Substrate Temperature ◽  
Deposition Rate ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Film Properties ◽  
High Quality ◽  
Deposition Rates ◽  
Sio2 Films ◽  
Silicon Source ◽  
Ecr Plasma

AbstractSiO2 thin firms were fabricated in a remote electron cyclotron resonance (ECR) plasma by tctraethoxysilane (TEOS) as the silicon source. Oxygen was used as the plasma gas. A mesh was placed between the TEOS gas outlet and the substrate. In the present investigation a-SiO2 films were deposited with and without the mesh and film properties were studied comparatively. The deposition rate increased when the mesh was attached. The optimum deposition rate is observed when the mesh voltage was zero, that is the mesh was grounded. The deposition rates of both methods were also dependnt on the TEOS flow rate, applied microwave power and the substrate temperature. These three parameters have significant roles in controlling the film quality. Good quality SiO2 films can be obtained with a higher deposition rate when a mesh is attached.

Low Temperature Silicon Oxidation With Electron Cyclotron Resonance Oxygen Plasma

1991 ◽  
Vol 235 ◽  
Author(s):  
K. T. Sung ◽  
S. W. Pang
Keyword(s):  
Low Temperature ◽  
Microwave Power ◽  
Cyclotron Resonance ◽  
Oxygen Plasma ◽  
Permanent Magnets ◽  
Electron Cyclotron Resonance ◽  
Electron Cyclotron ◽  
Rf Power ◽  
Source Distance ◽  
Ecr Source

ABSTRACTSilicon was oxidized at low temperature with an oxygen plasma generated by an electron cyclotron resonance (ECR) source. The ECR source utilized a multicusp magnetic field formed by permanent magnets. Microwave power at 2.45 GHz was applied to the source and if power at 13.56 MHz was applied to the sample stage. Si oxidation was studied as a function of source distance, pressure, microwave power, and rf power. The oxide thickness increases with microwave and rf power but decreases with source distance. The oxidation rate increases with pressure up to 12 mTorr, men decreases at higher pressure. The relative emission intensities in the plasma monitored using optical emission spectroscopy showed similar dependence on the source distance and microwave power. Oxidation temperature was estimated to be <100°C. Using ellipsometry and X-ray photoelectron spectroscopy, the oxidized films were found to be close to that of thermal oxide with refractive index at 1.45 and oxygen to silicon ratio of 2. From the current-voltage and capacitance-voltage measurements, the breakdown fields of these oxide films were 6.3 MV/cm and the fixed charge densities were 7×1010 cm−2.

Room Temperature Deposition of Silicon Oxynitride Films with Low Stress Using Sputtering-Type Electron Cyclotron Resonance Plasmas

1999 ◽  
Vol 594 ◽  
Author(s):  
D. Gao ◽  
K. Furukawa ◽  
H. Nakashima ◽  
J. Gao ◽  
J. Wang ◽  
...  
Keyword(s):  
Refractive Index ◽  
Thermal Desorption ◽  
Flow Rate ◽  
Cyclotron Resonance ◽  
Room Temperature ◽  
Electron Cyclotron Resonance ◽  
Thermal Desorption Spectroscopy ◽  
Electron Cyclotron ◽  
Silicon Oxynitride ◽  
Intrinsic Stress

AbstractSilicon oxynitride (SiOxNy) films with low stress were deposited successfully at room temperature using sputtering-type electron cyclotron resonance (ECR) plasmas. Films were deposited for a wide range of flow rate ratio of O2 to N2 at a constant Ar flow rate. Film properties were verified by characterizations of refractive index (ellipsometry), structural properties (Fourier transform infrared and Auger electron spectroscopy), intrinsic stress, and barrier strength of water penetration (thermal desorption spectroscopy). A near-stoichiometric SiOxNy (x = 1.44 and y = 0.41) film with low stress could be formed at the optimum deposition condition, under which the SiOxNy film had a refractive index of 1.54. The results of thermal desorption spectroscopy measurements showed that the SiOx Ny film had a higher barrier against moisture penetration relative to deposited SiOx and SiNy films. The SiOxNy film was directly deposited on the organic EL device and the applicability was shown clearly. These results indicate that this SiOxNy film deposited using a sputtering-type ECR plasma has the potential to be utilized as a passivation layer of organic EL devices, which are required to be formed at low temperature.

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