Room Temperature Deposition of Silicon Oxynitride Films with Low Stress Using Sputtering-Type Electron Cyclotron Resonance Plasmas

1999 ◽  
Vol 594 ◽  
Author(s):  
D. Gao ◽  
K. Furukawa ◽  
H. Nakashima ◽  
J. Gao ◽  
J. Wang ◽  
...  
Keyword(s):  
Refractive Index ◽  
Thermal Desorption ◽  
Flow Rate ◽  
Cyclotron Resonance ◽  
Room Temperature ◽  
Electron Cyclotron Resonance ◽  
Thermal Desorption Spectroscopy ◽  
Electron Cyclotron ◽  
Silicon Oxynitride ◽  
Intrinsic Stress

AbstractSilicon oxynitride (SiOxNy) films with low stress were deposited successfully at room temperature using sputtering-type electron cyclotron resonance (ECR) plasmas. Films were deposited for a wide range of flow rate ratio of O2 to N2 at a constant Ar flow rate. Film properties were verified by characterizations of refractive index (ellipsometry), structural properties (Fourier transform infrared and Auger electron spectroscopy), intrinsic stress, and barrier strength of water penetration (thermal desorption spectroscopy). A near-stoichiometric SiOxNy (x = 1.44 and y = 0.41) film with low stress could be formed at the optimum deposition condition, under which the SiOxNy film had a refractive index of 1.54. The results of thermal desorption spectroscopy measurements showed that the SiOx Ny film had a higher barrier against moisture penetration relative to deposited SiOx and SiNy films. The SiOxNy film was directly deposited on the organic EL device and the applicability was shown clearly. These results indicate that this SiOxNy film deposited using a sputtering-type ECR plasma has the potential to be utilized as a passivation layer of organic EL devices, which are required to be formed at low temperature.

A room temperature electron cyclotron resonance ion source for the DC-110 cyclotron

2014 ◽  
Vol 85 (2) ◽  
pp. 02A933
Author(s):  
A. Efremov ◽  
S. Bogomolov ◽  
A. Lebedev ◽  
V. Loginov ◽  
N. Yazvitsky
Keyword(s):  
Cyclotron Resonance ◽  
Room Temperature ◽  
Electron Cyclotron Resonance ◽  
Ion Source ◽  
Electron Cyclotron ◽  
Temperature Electron

The effects of deposition temperature on properties of SiO2 films fabricated by a new electron cyclotron resonance microwave plasma-enhanced chemical-vapor deposition process

1991 ◽  
Vol 69 (3-4) ◽  
pp. 165-169 ◽  
Author(s):  
T. T. Chau ◽  
S. R. Mejia ◽  
K. C. Kao
Keyword(s):  
Chemical Vapor Deposition ◽  
Leakage Current ◽  
Vapor Deposition ◽  
Cyclotron Resonance ◽  
Deposition Temperature ◽  
Room Temperature ◽  
Electron Cyclotron Resonance ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Electron Cyclotron

Silicon dioxide (SiO2) films were deposited by a new electron cyclotron resonance (ECR) microwave plasma enhanced chemical vapor deposition (PECVD) process at various deposition temperatures ranging from room temperaure (~25 °C) to 300 °C. The deposition rate increases with increasing deposition temperature and tends to become saturated as the deposition temperature approaches 250 °C, in contrast to the SiO2 films fabricated by the conventional ECR microwave PECVD process. The Fourier transform infrared results provide no evidence of hydrogen incorporation in the SiO2 films even when they were deposited at room temperature. Films deposited at temperatures higher than 270 °C exhibit an excellent electrical integrity that is comparable with high-quality SiO2 films grown thermally at 1000 °C. Films deposited at room temperature have a slightly higher refractive index and also high-leakage current though the films appear as good as those deposited at 300 °C. As the deposition temperature is increased, both the shoulder height of the Si—O stretching band and the leakage current decrease. The correlation between the film properties and the film growth mechanism is also discussed.

Electron Cyclotron Resonance CVD of Silicon Oxynitride for Optoelectronic Applications

1993 ◽  
Vol 300 ◽  
Author(s):  
M. Boudreau ◽  
M. Boumerzoug ◽  
R. V. Kruzelecky ◽  
P. Mascher ◽  
P. E. Jessop ◽  
...  
Keyword(s):  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Organic Liquid ◽  
Chemical Vapour ◽  
Optical Emission ◽  
Electron Cyclotron ◽  
Silicon Oxynitride ◽  
Ecr Plasma ◽  
Trade Name ◽  
Low Levels

ABSTRACTSilicon oxynitrides with compositions varying from Si3N4 to SiO2 were deposited on silicon substrates by electron cyclotron resonance plasma enhanced chemical vapour deposition (ECRPECVD). The silicon source used is an organic liquid, Tris Dimethyl Amino Silane (trade name SiN – 1000TM). Optical emission spectroscopy is used to characterize the ECR plasma, this information then is correlated with the optical properties of the deposited film, as determined by in situ ellipsometry. Auger electron spectroscopy showed that only low levels of carbon (< 3 at%) are present. The SiO2 and Si3N4 films are close to stoichiometric, with low levels of bonded hydrogen as determined by infrared absorption spectroscopy.Planar waveguide structures were fabricated and tested using the prism coupling technique to determine the mode effective indices. These are compared to those expected from the ellipsometry measurements.

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