Preparation and Growth of Pb2Sr2Y0.5Ca0.5Cu3O8+δ Thin Film Superconductors

ABSTRACTThe lead based superconductor Pb2Sr2Y0.5Ca0.5Cu3O8+δ is a most complex material. If any oxygen is present in the PbO-CuOδ-PbO sandwich layer (i.e. if δ>0) the superconductivity deteriorates. This is also a most difficult material to grow not only because of the large number of cation stoichiometries which have to be precisely balanced but also because of the tendency for multiple phases to form. Pulsed laser deposition (PLD) has been applied to prepare thin films of the 2213-phase on MgO (100) single crystal substrates at low temperature (300°C) in low oxidizing atmospheres. A basic set of ex-situ growth conditions has been determined which produce for the first time good quality films of this material as characterized by DC resistivity using the Van der Pauw method, as well as EDX and XRD. The layers are reasonably c-axis oriented and display a superconducting onset transition temperature of 79K and zero resistance at 65K after subsequent annealing in a nitrogen ambient.

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Pulsed Laser Deposited Oxide Green Emitting Thin Film Phosphors : Optimization of Growth Conditions

MRS Proceedings ◽

10.1557/proc-988-0988-qq06-12 ◽

2006 ◽

Vol 988 ◽

Author(s):

P. Thiyagarajan ◽

M. Kottaismay ◽

M S Ramachandra Rao

Keyword(s):

Thin Film ◽

Thin Films ◽

Oxygen Partial Pressure ◽

Partial Pressure ◽

Diffuse Reflectance Spectroscopy ◽

Quartz Substrate ◽

Pulsed Laser ◽

Growth Conditions ◽

Ex Situ ◽

Morphological Studies

AbstractStructural and photoluminescence (PL) properties of Zn2(1-x)MnxSiO4 (1 ≤ x ≤ 5) and diffuse reflectance spectroscopy (DRS) and morphological studies of ZnGa2O4:Mn thin film green emitting phosphors grown using pulsed laser deposition (PLD) technique have been investigated. Zn2(1-x)MnxSiO4 thin films grown on Si substrate at 700°C in 300 mTorr of oxygen partial pressure, upon ex-situ annealing at higher temperatures exhibit superior PL intensity. ZnGa2O4:Mn phosphor thin films grown on quartz substrate at 650oC and in-situ annealed in 300mTorr of oxygen partial pressure show better emission intensity. For both Zn2SiO4:Mn and ZnGa2O4:Mn phosphors, luminescence can be assigned to 4T1 – 6A1 transition of Mn2+ within the 3d orbital giving rise to emission at 525 and 503 nm, respectively.

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Laser-Induced Thermoelectric Voltage in La0.5Pr0.5MnO3 Thin Film

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.287-290.2248 ◽

2011 ◽

Vol 287-290 ◽

pp. 2248-2251

Author(s):

Qian Qian Hua ◽

Li Sheng Zhang ◽

Pei Jie Wang

Keyword(s):

Thin Film ◽

Experimental Data ◽

Single Crystal ◽

Pulsed Laser Deposition ◽

Colossal Magnetoresistance ◽

Laser Energy ◽

Pulsed Laser ◽

Laser Deposition ◽

Thermoelectric Voltage ◽

First Time

The laser-induced thermoelectric voltage was observed for the first time in praseodymium doped LaMnO3 thin film grown on LaAlO3 single crystal vicinal cut substrates by pulsed laser deposition. The experimental data for La0.5Pr0.5MnO3 showed a good liner relation between the voltage and the laser energy. The result suggested that the anisotropic Seebeck effect were responsible for the voltage signals in colossal magnetoresistance manganites thin film.

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Growth of Thin-film RuSr2GdCu2O8 by Pulsed-laser Deposition and Ex-situ Annealing

Advances in Superconductivity XII ◽

10.1007/978-4-431-66877-0_16 ◽

2000 ◽

pp. 80-84 ◽

Cited By ~ 1

Author(s):

James E. McCrone ◽

Gary Gibson ◽

Jeffrey L. Tallon ◽

John R. Cooper ◽

Zoe Barber

Keyword(s):

Thin Film ◽

Pulsed Laser Deposition ◽

Pulsed Laser ◽

Laser Deposition ◽

Ex Situ

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Growth of LixLaySrzMnO3 thin films by pulsed laser deposition: complex relation between thin film composition and deposition parameters

Applied Physics A ◽

10.1007/s00339-021-04506-9 ◽

2021 ◽

Vol 127 (6) ◽

Author(s):

G. Bimashofer ◽

S. Smetaczek ◽

E. Gilardi ◽

C. W. Schneider ◽

A. Limbeck ◽

...

Keyword(s):

Thin Film ◽

Thin Films ◽

Pulsed Laser Deposition ◽

Inductively Coupled Plasma ◽

Mass Difference ◽

Pulsed Laser ◽

Large Mass ◽

Growth Conditions ◽

Laser Deposition ◽

Film Composition

AbstractLixLaySrzMnO3 thin films of various compositions (x,y,z) have been grown using pulsed laser deposition. The compositions of the films have been studied as a function of deposition temperature, target-to-substrate distance and deposition pressure with respect to different cation ratios of the targets by inductively coupled plasma mass spectrometry. When growing multi-elemental oxide thin films containing lithium (with its large mass difference to other elements), lithium loss is most probably inevitable. But the desired thin film composition can be achieved by selecting specific growth conditions and different target compositions. The experiments also elucidate some of the mechanisms behind the incongruent lithium transfer from the targets to thin films.

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β-FeSi2 thin-films grown by a pulsed laser deposition

MRS Proceedings ◽

10.1557/proc-648-p6.34 ◽

2000 ◽

Vol 648 ◽

Author(s):

Shin-ichiro Uekusa ◽

Yasuharu Watanabe ◽

Yasuhiro Aida ◽

Noboru Miura

Keyword(s):

Thin Film ◽

Thin Films ◽

Pulsed Laser Deposition ◽

Lattice Mismatch ◽

Pulsed Laser ◽

Band Gap Energy ◽

Laser Deposition ◽

Carrier Distribution ◽

Van Der Pauw ◽

P Type

AbstractOrthorhombic β-FeSi2 thin-films were prepared on Si(100) and Si(111) substrates by a pulsed laser deposition method. When the substrate temperature was 500°C, β-FeSi2 thin-films were grown on Si(100) and Si(111) substrates. The thin-films grown on Si(100) and Si(111) substrates were polycrystalline and monocrystalline structures, respectively. The values of band-gap energy calculated from transmittance measurements were 0.71-0.72 eV. From Raman scattering measurements, it was found that the distortion due to the lattice mismatch between a β-FeSi2 thin-film and a Si substrate originates in the β-FeSi2/n-Si interface. Moreover, the fine crystals of β-FeSi2 existed in an amorphous thin-film which was grown on Si(111) substrate at room temperature (RT).From van der Pauw measurements, conduction type, carrier concentration and Hall mobility were p-type, 1018-1021 cm−3 and 200-500 cm2/Vsec, respectively. The p-n diode characteristics of these heterostructure diodes were investigated by I-V and C-V measurements. The results indicate that the carrier distribution agrees with an ideal one-sided slope junction.

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