Fourier Transform Infrared (FTIR) Analysis of Copper Oxide Thin Films Prepared by Metal Organic Chemical Vapor Deposition (MOCVD)

1992 ◽  
Vol 293 ◽  
Author(s):  
Yu-Neng Chang
Keyword(s):  
Deposition Temperature ◽  
Cupric Oxide ◽  
Processing Condition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Ir Absorption ◽  
Band Shape ◽  
Metal Organic ◽  
Ir Study ◽  
Ir Bands

AbstractFTIR results from cuprous oxide (Cu2O) and cupric oxide (CuO) films prepared by MOCVDtechnique were presented. According to FTIR and XRD results, Cu2O films can be prepared by MOCVD using 0.20 tort of copper acetylacetonate (Cu(acac)2) vapor and 150 torn of oxygen, at a deposition temperature of 340°C. The strong reductive tendency of Cu(acac)2 vapor in the MOCVD process is noted, as the oxidation state of copper was reduced from 2+ in Cu(acac)2 to 1+ in the Cu2O film. Cu2O films have a strong IR absorption band at 610 cm−1. CuO films were prepared at 0.20 tort of Cu(acac)2 vapor and 190 torr of oxygen, at a deposition temperature of 420°C. The IR bands of CuO films located at 440 cm−1, 480cm−1, and 540cm−1. The XRD results indicated that Cu2O films have a preferential orientation at (111) plane. From IR study, it appears that the MOCVD processing condition has an impact on the film microstructure, which in term influenced the band position and band shape of corresponding IR bands.

Effect of Incubation Time on Deposition Behavior of Ruthenium Films by MOCVD Using (2,4-Dimethylpentadienyl)(Ethylcyclopentadienyl)Ruthenium

2009 ◽  
Vol 421-422 ◽  
pp. 87-90 ◽  
Author(s):  
Masaki Hirano ◽  
Kazuhisa Kawano ◽  
Hiroshi Funakubo
Keyword(s):  
Incubation Time ◽  
Deposition Temperature ◽  
Substrate Surface ◽  
Chemical Vapor ◽  
Native Oxide ◽  
Organic Chemical ◽  
Deposition Mechanism ◽  
Deposition Amount ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

The deposition mechanism of metal-Ru films including incubation time was investigated for Ru films prepared by metal organic chemical vapor deposition from (2,4-Dimethylpentadienyl)(ethylcyclopentadienyl)Ruthenium (DER) - O2 system. Substrates with amorphous top-layer having various Hf/Si ratio, SiO2 (native oxide)/(001)Si (SiO2), HfSiON/SiON/(001)Si (HfSiON) and HfO2/SiON/(001)Si (HfO2), were used as substrates. The deposition temperature dependence of the deposition amount at the fixed deposition time ranging from 210 oC to 300 oC revealed that the deposition amount depended on the deposition temperature below 250 oC, while it was almost constant above this temperature. Incubation time depended on the kinds of substrate at 210 oC and the substrate surface was fully covered in a shorter time with smaller deposition amount for the substrates with shorter incubation time. In addition, the film with shorter incubation time had smaller surface roughness.

Growth and Physical Properties of MOCVD-Deposited Hafnium Oxide Films and Their Properties on Silicon

2002 ◽  
Vol 745 ◽  
Author(s):  
S. Van Elshocht ◽  
M. Caymax ◽  
S. De Gendt ◽  
T. Conard ◽  
J. Pétry ◽  
...  
Keyword(s):  
Physical Properties ◽  
Hafnium Oxide ◽  
Deposition Temperature ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Oxide Thickness ◽  
State Density ◽  
Organic Chemical ◽  
Organic Contamination ◽  
Metal Organic

ABSTRACTThis paper discusses metal organic chemical vapor deposited (MOCVD) HfO2 layers using tetrakis(diethylamido)hafnium (TDEAH) as precursor. We have studied the influence of the starting surface and deposition temperature on the growth kinetics and physical properties of the HfO2 layers. Important characteristics such as crystalline state, density, and organic contamination in the layers were found to be dependent on these parameters.Typical for this deposition process is the formation of an interfacial layer underneath the high-k layer. Its composition and thickness, affecting scaling of the equivalent oxide thickness, are shown to be closely related to the HfO2 process parameters mentioned above.Finally, we will show electrical results for HfO2/polySi gate stacks indicating the effect for deposition temperature.

scholarly journals Impact of the Deposition Temperature on the Structural and Electrical Properties of InN Films Grown on Self-Standing Diamond Substrates by Low-Temperature ECR-MOCVD

Coatings ◽  
2020 ◽  
Vol 10 (12) ◽  
pp. 1185
Author(s):  
Shuaijie Wang ◽  
Fuwen Qin ◽  
Yizhen Bai ◽  
Dong Zhang ◽  
Jingdan Zhang
Keyword(s):  
Electrical Properties ◽  
Low Temperature ◽  
Deposition Temperature ◽  
Electron Cyclotron Resonance ◽  
Chemical Vapor ◽  
Hall Effect Measurement ◽  
High Energy ◽  
Organic Chemical ◽  
Structural And Electrical Properties ◽  
Metal Organic

The progress of InN semiconductors is still in its infancy compared to GaN-based devices and materials. Herein, InN thin films were grown on self-standing diamond substrates using low-temperature electron cyclotron resonance plasma-enhanced metal organic chemical vapor deposition (ECR-PEMOCVD) with inert N2 used as a nitrogen source. The thermal conductivity of diamond substrates makes the as-grown InN films especially attractive for various optoelectronic applications. Structural and electrical properties which depend on deposition temperature were systematically investigated by reflection high-energy electron diffraction (RHEED), X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), and Hall effect measurement. The results indicated that the quality and properties of InN films were significantly influenced by the deposition temperature, and InN films with highly c-axis preferential orientation and surface morphology were obtained at optimized temperatures of 400 °C. Moreover, their electrical properties with deposition temperature were studied, and their tendency was correlated with the dependence on micro- structure and morphology.

Electrical, Optical, and Structural Properties of Fluorine-Doped CdO

2001 ◽  
Vol 666 ◽  
Author(s):  
Teresa M. Barnes ◽  
Xiaonan Li ◽  
Clay Dehart ◽  
Helio Moutinho ◽  
Sally Asher ◽  
...  
Keyword(s):  
Carrier Concentration ◽  
Vapor Deposition ◽  
Deposition Temperature ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Fluorine Doping ◽  
Polycrystalline Thin Film ◽  
Order Of Magnitude ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

ABSTRACTWe have investigated the effects of fluorine doping and deposition temperature on CdO grown by metal-organic chemical vapor deposition (MOCVD). Fluorine doping increases the carrier concentration of the films by about one order of magnitude at a deposition temperature of 300°C. The increased carrier concentration increases the optical bandgap from 2.4 eV to 2.85 eV. On the other hand, the higher deposition temperatures enabled by fluorine doping improve the crystal structure of the films. Therefore a higher mobility has been reached. The polycrystalline thin film CdO deposited at 450°C has the Hall mobility of 262 cm2/V-s and a carrier concentration of 3.8×1019/cm3.

SrBi2Ta2O9 thin films made by liquid source metal-organic chemical vapor deposition

1997 ◽  
Vol 12 (3) ◽  
pp. 783-792 ◽  
Author(s):  
Yongfei Zhu ◽  
Seshu B. Desu ◽  
Tingkai Li ◽  
Sasangan Ramanathan ◽  
Masaya Nagata
Keyword(s):  
Thin Films ◽  
Deposition Temperature ◽  
Ferroelectric Properties ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Organic Chemical ◽  
Liquid Source ◽  
Metal Organic ◽  
Higher Temperature ◽  
Organic Chemical Vapor Deposition

A liquid source metal-organic chemical vapor deposition system was installed to deposit SrBi2Ta2O9 (SBT) thin films on sapphire and Pt/Ti/SiO2/Si substrates. The process parameters such as deposition temperature and pressure, and ratio of Sr: Bi: Ta in the precursor solutions were optimized to achieve stoichiometric films with good reproducible ferroelectric properties. It was found that the nucleation of SBT started at a deposition temperature close to 500 °C and grain growth dominated at 700 °C and higher temperatures. With increasing deposition temperatures, the grain size of SBT thin films increased from 0.01 μm to 0.2 μm; however, the surface roughness and porosity of the films also increased. To fabricate specular SBT films, the films had to be deposited at lower temperature and annealed at higher temperature for grain growth. A two-step deposition process was developed which resulted in high quality films in terms of uniformity, surface morphology, and ferroelectric properties. The key to the success of this process was the homogeneous nucleation sites at lower deposition temperature during the first step and subsequent dense film growth at higher temperature. The two-step deposition process resulted in dense, homogeneous films with less surface roughness and improved ferroelectric properties. SBT thin films with a grain size of about 0.1 μm exhibited the following properties: thickness: 0.16–0.19 μm; 2Pr: 7.8–11.4 μC/cm2 at 5 V; Ec: 50–65 kV/cm; Ileakage: 8.0–9.5 × 10−9 Acm−2 at 150 kV/cm; dielectric constant: 100–200; and fatigue rate: 0.94–0.98 after 1010 cycles at 5 V.

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