Growth and Physical Properties of MOCVD-Deposited Hafnium Oxide Films and Their Properties on Silicon

2002 ◽  
Vol 745 ◽  
Author(s):  
S. Van Elshocht ◽  
M. Caymax ◽  
S. De Gendt ◽  
T. Conard ◽  
J. Pétry ◽  
...  
Keyword(s):  
Physical Properties ◽  
Hafnium Oxide ◽  
Deposition Temperature ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Oxide Thickness ◽  
State Density ◽  
Organic Chemical ◽  
Organic Contamination ◽  
Metal Organic

ABSTRACTThis paper discusses metal organic chemical vapor deposited (MOCVD) HfO2 layers using tetrakis(diethylamido)hafnium (TDEAH) as precursor. We have studied the influence of the starting surface and deposition temperature on the growth kinetics and physical properties of the HfO2 layers. Important characteristics such as crystalline state, density, and organic contamination in the layers were found to be dependent on these parameters.Typical for this deposition process is the formation of an interfacial layer underneath the high-k layer. Its composition and thickness, affecting scaling of the equivalent oxide thickness, are shown to be closely related to the HfO2 process parameters mentioned above.Finally, we will show electrical results for HfO2/polySi gate stacks indicating the effect for deposition temperature.

SrBi2Ta2O9 thin films made by liquid source metal-organic chemical vapor deposition

1997 ◽  
Vol 12 (3) ◽  
pp. 783-792 ◽  
Author(s):  
Yongfei Zhu ◽  
Seshu B. Desu ◽  
Tingkai Li ◽  
Sasangan Ramanathan ◽  
Masaya Nagata
Keyword(s):  
Thin Films ◽  
Deposition Temperature ◽  
Ferroelectric Properties ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Organic Chemical ◽  
Liquid Source ◽  
Metal Organic ◽  
Higher Temperature ◽  
Organic Chemical Vapor Deposition

A liquid source metal-organic chemical vapor deposition system was installed to deposit SrBi2Ta2O9 (SBT) thin films on sapphire and Pt/Ti/SiO2/Si substrates. The process parameters such as deposition temperature and pressure, and ratio of Sr: Bi: Ta in the precursor solutions were optimized to achieve stoichiometric films with good reproducible ferroelectric properties. It was found that the nucleation of SBT started at a deposition temperature close to 500 °C and grain growth dominated at 700 °C and higher temperatures. With increasing deposition temperatures, the grain size of SBT thin films increased from 0.01 μm to 0.2 μm; however, the surface roughness and porosity of the films also increased. To fabricate specular SBT films, the films had to be deposited at lower temperature and annealed at higher temperature for grain growth. A two-step deposition process was developed which resulted in high quality films in terms of uniformity, surface morphology, and ferroelectric properties. The key to the success of this process was the homogeneous nucleation sites at lower deposition temperature during the first step and subsequent dense film growth at higher temperature. The two-step deposition process resulted in dense, homogeneous films with less surface roughness and improved ferroelectric properties. SBT thin films with a grain size of about 0.1 μm exhibited the following properties: thickness: 0.16–0.19 μm; 2Pr: 7.8–11.4 μC/cm2 at 5 V; Ec: 50–65 kV/cm; Ileakage: 8.0–9.5 × 10−9 Acm−2 at 150 kV/cm; dielectric constant: 100–200; and fatigue rate: 0.94–0.98 after 1010 cycles at 5 V.

Effect of Incubation Time on Deposition Behavior of Ruthenium Films by MOCVD Using (2,4-Dimethylpentadienyl)(Ethylcyclopentadienyl)Ruthenium

2009 ◽  
Vol 421-422 ◽  
pp. 87-90 ◽  
Author(s):  
Masaki Hirano ◽  
Kazuhisa Kawano ◽  
Hiroshi Funakubo
Keyword(s):  
Incubation Time ◽  
Deposition Temperature ◽  
Substrate Surface ◽  
Chemical Vapor ◽  
Native Oxide ◽  
Organic Chemical ◽  
Deposition Mechanism ◽  
Deposition Amount ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

The deposition mechanism of metal-Ru films including incubation time was investigated for Ru films prepared by metal organic chemical vapor deposition from (2,4-Dimethylpentadienyl)(ethylcyclopentadienyl)Ruthenium (DER) - O2 system. Substrates with amorphous top-layer having various Hf/Si ratio, SiO2 (native oxide)/(001)Si (SiO2), HfSiON/SiON/(001)Si (HfSiON) and HfO2/SiON/(001)Si (HfO2), were used as substrates. The deposition temperature dependence of the deposition amount at the fixed deposition time ranging from 210 oC to 300 oC revealed that the deposition amount depended on the deposition temperature below 250 oC, while it was almost constant above this temperature. Incubation time depended on the kinds of substrate at 210 oC and the substrate surface was fully covered in a shorter time with smaller deposition amount for the substrates with shorter incubation time. In addition, the film with shorter incubation time had smaller surface roughness.

Fabrication and Characterization of 4H-SiC MOSFET with MOCVD-Grown Al2O3 Gate Insulator

2007 ◽  
Vol 556-557 ◽  
pp. 787-790 ◽  
Author(s):  
Shiro Hino ◽  
Tomohiro Hatayama ◽  
Naruhisa Miura ◽  
Tatsuo Oomori ◽  
Eisuke Tokumitsu
Keyword(s):  
Photoelectron Spectroscopy ◽  
Chemical Vapor ◽  
Drain Current ◽  
Interface State ◽  
State Density ◽  
Gate Insulator ◽  
Organic Chemical ◽  
Mos Capacitors ◽  
Significant Difference ◽  
Metal Organic

We have fabricated and characterized MOS capacitors and lateral MOSFETs using Al2O3 as a gate insulator. Al2O3 films were deposited by metal-organic chemical vapor deposition (MOCVD) at temperatures as low as 190 oC using tri-ethyl-aluminum and H2O as precursors. We first demonstrate from the capacitance – voltage (C-V) measurements that the Al2O3/SiC interface has lower interface state density than the thermally-grown SiO2/SiC interface. No significant difference was observed between X-ray photoelectron spectroscopy (XPS) Si 2p spectrum from the Al2O3/SiC interface and that from the SiC substrate, which means the SiC substrate was not oxidized during the Al2O3 deposition. Next, we show that the fabricated lateral SiC-MOSFETs with Al2O3 gate insulator have good drain current – drain voltage (ID-VD) and drain current – gate voltage (ID-VG) characteristics with normally-off behavior. The obtained peak values of field-effect mobility (μFE) are between 68 and 88 cm2/Vs.

Improvement in the FF over 0.700 by Controlling the Interface Quality

2009 ◽  
Vol 1165 ◽  
Author(s):  
Katsumi Kushiya ◽  
Y. Tanaka ◽  
H. Hakuma ◽  
S. Kijima ◽  
T. Aramoto ◽  
...  
Keyword(s):  
Chemical Vapor ◽  
Deposition Process ◽  
Organic Chemical ◽  
Surface Layers ◽  
Shunt Resistance ◽  
Interface Quality ◽  
Metal Organic ◽  
The Difference ◽  
Organic Chemical Vapor Deposition ◽  
Mocvd Technique

AbstractIn this study, the pn hetero-interface between Zn(O,S,OH)x buffer and Cu(InGa)(SSe)2 (CIGSS) surface layers is discussed in order to achieve the fill factor (FF) over 0.73 and the circuit efficiency of 16 % on aperture area of over 800 cm2. Two resistances, i.e. shunt resistance (Rsh) and series resistance (Rs), in the circuits are employed as a yardstick to evaluate the interface quality. Since there are no realistic yardsticks on the Rs, the difference between Voc and optimum-power voltage (Vop) (i.e. Voc-Vop [V/cell]) is applied as a simple tool to evaluate the Rs. It is emphasized that it is important to reduce the Rs mainly correlated to the buffer deposition process and, as a result, the interface quality. We consider the Rs is dependent on the remaining Zn(OH)2 concentration in the Zn(O,S,OH)x buffer deposited by a chemical-bath deposition (CBD) technique. As an approach to make the Rs minimize and the Rsh maximize simultaneously, adjusting the thickness of a CBD-Zn(O,S,OH)x buffer layer and a non-doped ZnO layer deposited by a metal-organic chemical vapor deposition (MOCVD) technique has been effective to reduce the remaining Zn(OH)2 concentration. Determining the optimized deposition procedure to achieve the FF over 0.700 consistently, the circuit efficiency of 15.3 % with aperture area of 856 cm2 and the FF of 0.717 has been achieved.

Fourier Transform Infrared (FTIR) Analysis of Copper Oxide Thin Films Prepared by Metal Organic Chemical Vapor Deposition (MOCVD)

1992 ◽  
Vol 293 ◽  
Author(s):  
Yu-Neng Chang
Keyword(s):  
Deposition Temperature ◽  
Cupric Oxide ◽  
Processing Condition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Ir Absorption ◽  
Band Shape ◽  
Metal Organic ◽  
Ir Study ◽  
Ir Bands

AbstractFTIR results from cuprous oxide (Cu2O) and cupric oxide (CuO) films prepared by MOCVDtechnique were presented. According to FTIR and XRD results, Cu2O films can be prepared by MOCVD using 0.20 tort of copper acetylacetonate (Cu(acac)2) vapor and 150 torn of oxygen, at a deposition temperature of 340°C. The strong reductive tendency of Cu(acac)2 vapor in the MOCVD process is noted, as the oxidation state of copper was reduced from 2+ in Cu(acac)2 to 1+ in the Cu2O film. Cu2O films have a strong IR absorption band at 610 cm−1. CuO films were prepared at 0.20 tort of Cu(acac)2 vapor and 190 torr of oxygen, at a deposition temperature of 420°C. The IR bands of CuO films located at 440 cm−1, 480cm−1, and 540cm−1. The XRD results indicated that Cu2O films have a preferential orientation at (111) plane. From IR study, it appears that the MOCVD processing condition has an impact on the film microstructure, which in term influenced the band position and band shape of corresponding IR bands.

Half-sandwich cobalt complexes in the metal-organic chemical vapor deposition process

2015 ◽  
Vol 578 ◽  
pp. 180-184 ◽  
Author(s):  
Colin Georgi ◽  
Marko Hapke ◽  
Indre Thiel ◽  
Alexander Hildebrandt ◽  
Thomas Waechtler ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Cobalt Complexes ◽  
Deposition Process ◽  
Chemical Vapor Deposition Process ◽  
Organic Chemical ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition ◽  
Half Sandwich
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