Electrical, Optical, and Structural Properties of Fluorine-Doped CdO

2001 ◽  
Vol 666 ◽  
Author(s):  
Teresa M. Barnes ◽  
Xiaonan Li ◽  
Clay Dehart ◽  
Helio Moutinho ◽  
Sally Asher ◽  
...  
Keyword(s):  
Carrier Concentration ◽  
Vapor Deposition ◽  
Deposition Temperature ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Fluorine Doping ◽  
Polycrystalline Thin Film ◽  
Order Of Magnitude ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

ABSTRACTWe have investigated the effects of fluorine doping and deposition temperature on CdO grown by metal-organic chemical vapor deposition (MOCVD). Fluorine doping increases the carrier concentration of the films by about one order of magnitude at a deposition temperature of 300°C. The increased carrier concentration increases the optical bandgap from 2.4 eV to 2.85 eV. On the other hand, the higher deposition temperatures enabled by fluorine doping improve the crystal structure of the films. Therefore a higher mobility has been reached. The polycrystalline thin film CdO deposited at 450°C has the Hall mobility of 262 cm2/V-s and a carrier concentration of 3.8×1019/cm3.

scholarly journals The Growth and Doping of Al(As)Sb by Metal-Organic Chemical Vapor Deposition

1996 ◽  
Vol 421 ◽  
Author(s):  
R. M. Biefeld ◽  
A. A. Allerman ◽  
S. R. Kurtz
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Active Regions ◽  
Epitaxial Films ◽  
Organic Chemical ◽  
Order Of Magnitude ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition ◽  
Cladding Layers

AbstractAlSb and AlAsxSb1−x epitaxial films grown by metal-organic chemical vapor deposition were successfully doped p- or n-type using diethylzinc or tetraethyltin, respectively. AlSb films were grown at 500°C and 76 torr using trimethylamine or ethyldimethylamine alane and triethylantimony. We examined the growth of AlAsSb using temperatures of 500 to 600 ° C, pressures of 65 to 630 torr, V/Ill ratios of 1–17, and growth rates of 0.3 to 2.7 μm/hour in a horizontal quartz reactor. SIMS showed C and 0 levels below 2 × 1018 cm−3 and 6×1018 cm−3 respectively for undoped AlSb. Similar levels of O were found in AlAs0.16Sb0.84 films but C levels were an order of magnitude less in undoped and Sn-doped AlAs0.16 Sb0.84 films. Hall measurements of AlAs0.16Sb0.84 showed hole concentrations between l×1017 cm−3 to 5×1018 cm−3 for Zn-doped material and electron concentrations in the low to mid 1018 cm−3 for Sndoped material. We have grown pseudomorphic InAs/InAsSb quantum well active regions on AlAsSb cladding layers. Photoluminescence of these layers has been observed up to 300 K.

A Drastic Change in Structure and Property of TiO2 Thin Films Deposited by Metal-Organic Chemical Vapor Deposition With Deposition Temperature

2000 ◽  
Vol 616 ◽  
Author(s):  
Jeong-Hoon Park ◽  
Woon-Jo Cho ◽  
Kug-Sun Hong
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Refractive Index ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Deposition Temperature ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

AbstractTiO2 thin films were deposited by metal-organic chemical vapor deposition (MOCVD) method using titanium tetraisopropoxide(TTIP). A drastic change in structural aspect and its property occurred when the deposition temperature increased above 400°C. Deposition kinetics was proved to transit from reaction controlled regime into diffusion controlled regime above about 400°C in Arrehnius plot. In X-ray diffraction (XRD)and infrared reflectance spectra, it was observed that the crystallinity was decreased significantly around 400°C. The surface microstructure has changed explicitly from dense structure with larger grains to porous one with smaller grains observed by scanning electron microscopy and transmission electron microscopy. Electrical resistance of the films jumped by 2 orders of magnitude, which is measured by the 4-point probe method. The refractive index calculated by Swanepoel's method has decreased from 2.45 to 2.28 at 630nm. The porous microstructure of films deposited at above 400°C was thought to be responsible for the significant decrease in electrical conductivity and refractive index of the films.

scholarly journals Laser‐Assisted Metal–Organic Chemical Vapor Deposition of Gallium Nitride

2021 ◽  
Vol 15 (6) ◽  
pp. 2170024
Author(s):  
Yuxuan Zhang ◽  
Zhaoying Chen ◽  
Kaitian Zhang ◽  
Zixuan Feng ◽  
Hongping Zhao
Keyword(s):  
Gallium Nitride ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition
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