Electron Cyclotron Resonance CVD of Silicon Oxynitride for Optoelectronic Applications

1993 ◽  
Vol 300 ◽  
Author(s):  
M. Boudreau ◽  
M. Boumerzoug ◽  
R. V. Kruzelecky ◽  
P. Mascher ◽  
P. E. Jessop ◽  
...  
Keyword(s):  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Organic Liquid ◽  
Chemical Vapour ◽  
Optical Emission ◽  
Electron Cyclotron ◽  
Silicon Oxynitride ◽  
Ecr Plasma ◽  
Trade Name ◽  
Low Levels

ABSTRACTSilicon oxynitrides with compositions varying from Si3N4 to SiO2 were deposited on silicon substrates by electron cyclotron resonance plasma enhanced chemical vapour deposition (ECRPECVD). The silicon source used is an organic liquid, Tris Dimethyl Amino Silane (trade name SiN – 1000TM). Optical emission spectroscopy is used to characterize the ECR plasma, this information then is correlated with the optical properties of the deposited film, as determined by in situ ellipsometry. Auger electron spectroscopy showed that only low levels of carbon (< 3 at%) are present. The SiO2 and Si3N4 films are close to stoichiometric, with low levels of bonded hydrogen as determined by infrared absorption spectroscopy.Planar waveguide structures were fabricated and tested using the prism coupling technique to determine the mode effective indices. These are compared to those expected from the ellipsometry measurements.

Optical and electrical properties of electron cyclotron resonance chemical vapour-deposited SiNx:H films

1992 ◽  
Vol 70 (10-11) ◽  
pp. 1104-1108 ◽  
Author(s):  
Marcel Boudreau ◽  
Mohamed Boumerzoug ◽  
Roman V. Kruzelecky ◽  
Peter Mascher ◽  
Paul E. Jessop ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Chemical Vapour ◽  
Electron Cyclotron ◽  
Dielectric Constants ◽  
Silicon Source ◽  
Si Substrates ◽  
Ecr Plasma ◽  
Deposition Parameters

Silicon nitride (SiNx:H) films were deposited on both InP and Si substrates at temperatures ranging from room temperature to 400 °C by electron cyclotron resonance (ECR) plasma chemical-vapour deposition. The silicon source used was ditertiary butyl silane (SiH2(C4H9)2) that was activated by ECR plasmas composed of nitrogen alone or in combination with hydrogen or argon. The effects of various deposition parameters on the film properties are reported. The film indices of refraction ranged from 1.85 to 2.0, while the buffered HF etch rates were as low as 6 Å min−1 (1 Å = 10−10 m). Si/N ratios of the films ranged from 0.70 to 2.5, while the total hydrogen content was found to be approximately 20 to 25 at.%. Incorporation of carbon from the organic silicon source was efficiently suppressed (< 1%) by the addition of a small amount of H2 to the ECR plasma gas. To study the electrical properties of the SiNx:H films, metal–insulator–semiconductor structures were fabricated. Film resistivities as high as 2 × 1015 Ω cm and insulator dielectric constants from 4 to 5 were measured.

Room Temperature Deposition of Silicon Oxynitride Films with Low Stress Using Sputtering-Type Electron Cyclotron Resonance Plasmas

1999 ◽  
Vol 594 ◽  
Author(s):  
D. Gao ◽  
K. Furukawa ◽  
H. Nakashima ◽  
J. Gao ◽  
J. Wang ◽  
...  
Keyword(s):  
Refractive Index ◽  
Thermal Desorption ◽  
Flow Rate ◽  
Cyclotron Resonance ◽  
Room Temperature ◽  
Electron Cyclotron Resonance ◽  
Thermal Desorption Spectroscopy ◽  
Electron Cyclotron ◽  
Silicon Oxynitride ◽  
Intrinsic Stress

AbstractSilicon oxynitride (SiOxNy) films with low stress were deposited successfully at room temperature using sputtering-type electron cyclotron resonance (ECR) plasmas. Films were deposited for a wide range of flow rate ratio of O2 to N2 at a constant Ar flow rate. Film properties were verified by characterizations of refractive index (ellipsometry), structural properties (Fourier transform infrared and Auger electron spectroscopy), intrinsic stress, and barrier strength of water penetration (thermal desorption spectroscopy). A near-stoichiometric SiOxNy (x = 1.44 and y = 0.41) film with low stress could be formed at the optimum deposition condition, under which the SiOxNy film had a refractive index of 1.54. The results of thermal desorption spectroscopy measurements showed that the SiOx Ny film had a higher barrier against moisture penetration relative to deposited SiOx and SiNy films. The SiOxNy film was directly deposited on the organic EL device and the applicability was shown clearly. These results indicate that this SiOxNy film deposited using a sputtering-type ECR plasma has the potential to be utilized as a passivation layer of organic EL devices, which are required to be formed at low temperature.

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