Simultaneous Formation of Front and Back Contacts on Solar Cells Using Optical Processing

1993 ◽  
Vol 303 ◽  
Author(s):  
Bhushan L. Sopori
Keyword(s):  
Solar Cells ◽  
Interface Reaction ◽  
Semiconductor Processing ◽  
Optical Processing ◽  
Simultaneous Formation ◽  
New Approach ◽  
Step Process ◽  
Thin Region ◽  
One Step ◽  
P Type

ABSTRACTA new approach for semiconductor processing is described in which a melt is created at a semiconductor-metal (S-M) interface by shining light of a suitable spectrum from the semiconductor side. The melt can be controlled and confined to a thin region in the vicinity of the interface by controlling the energy delivered to the interface. The interface region regrows epitaxially on silicon as a Si-metal alloy. This phenomenon appears to be an optically induced effect. The interface reaction is greatly diminished if the light is incident from the metal side. This effect is applied to form low resistivity contacts to N+/ P type solar cells in a one-step process.

Functionalized aluminum-catalyzed silicon nanowire formation and radial junction photovoltaic devices

Nanoscale ◽  
2021 ◽  
Author(s):  
Wipakorn Jevasuwan ◽  
Naoki Fukata
Keyword(s):  
Surface Modification ◽  
Solar Cells ◽  
Surface Defects ◽  
Silicon Nanowire ◽  
Photovoltaic Devices ◽  
Step Process ◽  
One Step ◽  
Length Reduction

Vertical Al-catalyzed SiNW arrays with shaped surfaces were synthesized by a one-step process and NW-based solar cells were demonstrated with optimized NW surface defects through surface modification and length reduction.

P-Type CuInSe2 Thin Films and Solar Cells Prepared by One-Step Electrodeposition

2008 ◽  
pp. 1308-1311
Author(s):  
Lei Wan ◽  
Zhizhong Bai ◽  
Bo Chen ◽  
Renliang Sun ◽  
Guoshun Jiang ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
One Step ◽  
P Type

Controlled mechanical cleavage of bulk niobium diselenide to nanoscaled sheet, rod, and particle structures for Pt-free dye-sensitized solar cells

2014 ◽  
Vol 2 (29) ◽  
pp. 11382-11390 ◽  
Author(s):  
Mohammed Aziz Ibrahem ◽  
Wei-Chih Huang ◽  
Tian-wey Lan ◽  
Karunakara Moorthy Boopathi ◽  
Yu-Chen Hsiao ◽  
...  
Keyword(s):  
Solar Cells ◽  
Dye Sensitized Solar Cells ◽  
Mechanical Forces ◽  
Step Process ◽  
Dye Sensitized ◽  
Niobium Diselenide ◽  
One Step ◽  
Mechanical Cleavage ◽  
Sensitized Solar Cells

A one-step process for the preparation of NbSe2 nanostructures under the effects of mechanical forces to be used as Pt replacement CEs in DSSCs is reported.

One-Step Fabrication of Unique Mesoporous NiO Hollow Sphere Film on FTO for High-Performance P-Type Dye-Sensitized Solar Cells

2014 ◽  
Vol 1 (3) ◽  
pp. 1300110 ◽  
Author(s):  
Hong Bin Yang ◽  
Bin Liu ◽  
Si Yun Khoo ◽  
Lin Nan Zhu ◽  
Chun Xian Guo ◽  
...  
Keyword(s):  
Solar Cells ◽  
Hollow Sphere ◽  
High Performance ◽  
Dye Sensitized Solar Cells ◽  
Dye Sensitized ◽  
One Step ◽  
P Type ◽  
Sensitized Solar Cells

scholarly journals A simple one step process for enhancement of titanium foil dye sensitised solar cell anodes

2015 ◽  
Vol 3 (7) ◽  
pp. 3266-3270 ◽  
Author(s):  
J. Linnemann ◽  
J. Giorgio ◽  
K. Wagner ◽  
G. Mathieson ◽  
G. G. Wallace ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Nitric Acid ◽  
Acid Treatment ◽  
Photovoltaic Performance ◽  
Titanium Foil ◽  
Step Process ◽  
One Step

This communication highlights a simple nitric acid treatment, which enhances the properties of titanium foil and improves the photovoltaic performance of dye sensitised solar cells.

Simultaneous Formation of Ohmic Contacts for Both N- and P-Type 4H-Sic Using Nial-Based Contact Materials

2006 ◽  
Vol 911 ◽  
Author(s):  
Susumu Tsukimoto ◽  
Toshitake Onishi ◽  
Kazuhiro Ito ◽  
Masanori Murakami
Keyword(s):  
Ohmic Contacts ◽  
Field Effect Transistors ◽  
Strong Dependence ◽  
Oxide Semiconductor ◽  
Simultaneous Formation ◽  
Contact Materials ◽  
Specific Contact ◽  
One Step ◽  
Lower Temperature ◽  
P Type

AbstractIn order to simplify a fabrication process of silicon carbide power MOSFETs (metal oxide semiconductor field effect transistors), development of a simultaneous formation process of ohmic contacts to both the p-well and n-source regions of the SiC devices using same contact materials and one step annealing was challenged. We succeeded to develop NiAl-based contact materials which provided ohmic behaviors for both n- and p-type 4H-SiC after one step annealing. The Ni/Al and Ni/Ti/Al ohmic contacts were prepared by depositing sequentially Ni, (Ti) and Al layers with various layer thicknesses onto the n- and p-type SiC substrates which were doped with N at 1 × 1019 cm-3 and with Al at 8 × 1018 cm-3, respectively. The Ni(50 nm)/Al(5 ~ 6 nm) contacts showed ohmic behaviors for both the n- and p-type SiC substrates after annealing at 1000 °C. The Ni(20 nm)/Ti(50 nm)/Al(50 ~ 70 nm) contacts showed ohmic behaviors for both the n- and p-type SiC substrates after annealing at a lower temperature of 800 °C. The specific contact resistances of these contacts were measured to be in the order of 10-3 Ω-cm2 for both p- and n-type SiC, and were found to have strong dependence of the Al layer thicknesses of materials. The interfacial microstructures of the NiAl-based contacts were also observed by transmission electron microscopy (TEM) to understand the current transport mechanism through the metal/SiC interfaces.

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