Functionalized aluminum-catalyzed silicon nanowire formation and radial junction photovoltaic devices

Nanoscale ◽  
2021 ◽  
Author(s):  
Wipakorn Jevasuwan ◽  
Naoki Fukata
Keyword(s):  
Surface Modification ◽  
Solar Cells ◽  
Surface Defects ◽  
Silicon Nanowire ◽  
Photovoltaic Devices ◽  
Step Process ◽  
One Step ◽  
Length Reduction

Vertical Al-catalyzed SiNW arrays with shaped surfaces were synthesized by a one-step process and NW-based solar cells were demonstrated with optimized NW surface defects through surface modification and length reduction.

Controlled mechanical cleavage of bulk niobium diselenide to nanoscaled sheet, rod, and particle structures for Pt-free dye-sensitized solar cells

2014 ◽  
Vol 2 (29) ◽  
pp. 11382-11390 ◽  
Author(s):  
Mohammed Aziz Ibrahem ◽  
Wei-Chih Huang ◽  
Tian-wey Lan ◽  
Karunakara Moorthy Boopathi ◽  
Yu-Chen Hsiao ◽  
...  
Keyword(s):  
Solar Cells ◽  
Dye Sensitized Solar Cells ◽  
Mechanical Forces ◽  
Step Process ◽  
Dye Sensitized ◽  
Niobium Diselenide ◽  
One Step ◽  
Mechanical Cleavage ◽  
Sensitized Solar Cells

A one-step process for the preparation of NbSe2 nanostructures under the effects of mechanical forces to be used as Pt replacement CEs in DSSCs is reported.

Simultaneous Formation of Front and Back Contacts on Solar Cells Using Optical Processing

1993 ◽  
Vol 303 ◽  
Author(s):  
Bhushan L. Sopori
Keyword(s):  
Solar Cells ◽  
Interface Reaction ◽  
Semiconductor Processing ◽  
Optical Processing ◽  
Simultaneous Formation ◽  
New Approach ◽  
Step Process ◽  
Thin Region ◽  
One Step ◽  
P Type

ABSTRACTA new approach for semiconductor processing is described in which a melt is created at a semiconductor-metal (S-M) interface by shining light of a suitable spectrum from the semiconductor side. The melt can be controlled and confined to a thin region in the vicinity of the interface by controlling the energy delivered to the interface. The interface region regrows epitaxially on silicon as a Si-metal alloy. This phenomenon appears to be an optically induced effect. The interface reaction is greatly diminished if the light is incident from the metal side. This effect is applied to form low resistivity contacts to N+/ P type solar cells in a one-step process.

Preparation and surface modification of uniform ZnO nanorods via a one-step process

2007 ◽  
Vol 296 (1-3) ◽  
pp. 92-96 ◽  
Author(s):  
Lanqin Tang ◽  
Bing Zhou ◽  
Yumei Tian ◽  
Hari Bala ◽  
Yan Pan ◽  
...  
Keyword(s):  
Surface Modification ◽  
Zno Nanorods ◽  
Step Process ◽  
One Step

scholarly journals A simple one step process for enhancement of titanium foil dye sensitised solar cell anodes

2015 ◽  
Vol 3 (7) ◽  
pp. 3266-3270 ◽  
Author(s):  
J. Linnemann ◽  
J. Giorgio ◽  
K. Wagner ◽  
G. Mathieson ◽  
G. G. Wallace ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Nitric Acid ◽  
Acid Treatment ◽  
Photovoltaic Performance ◽  
Titanium Foil ◽  
Step Process ◽  
One Step

This communication highlights a simple nitric acid treatment, which enhances the properties of titanium foil and improves the photovoltaic performance of dye sensitised solar cells.

Perovskite solar cells with an MoS2 electron transport layer

2019 ◽  
Vol 7 (12) ◽  
pp. 7151-7158 ◽  
Author(s):  
Ranbir Singh ◽  
Anupam Giri ◽  
Monalisa Pal ◽  
Kaliannan Thiyagarajan ◽  
Junghyeok Kwak ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Electron Transport ◽  
Glass Substrate ◽  
Perovskite Solar Cells ◽  
Transport Layer ◽  
Electron Transport Layer ◽  
Step Process ◽  
One Step ◽  
Fto Glass

MoS2 thin films are directly synthesized over FTO/glass substrate in a one-step process and used as an efficient electron transport layer (ETL) for perovskite solar cells (PSCs).

Pulsed UV Excimer Laser Doping of Semiconductors

1982 ◽  
Vol 17 ◽  
Author(s):  
T. F. Deutsch
Keyword(s):  
Solar Cells ◽  
Excimer Laser ◽  
Liquid State ◽  
Excimer Lasers ◽  
Parent Molecule ◽  
Step Process ◽  
State Diffusion ◽  
Shallow Junctions ◽  
One Step ◽  
Dopant Atoms

ABSTRACTUV excimer lasers have been used to dope semiconductors by a one–step process in which the laser serves both to release dopant atoms from a parent molecule and to melt the surface, allowing incorporation of dopant atoms by liquid state diffusion. The technique has been used to dope Si, GaAs, and InP. Shallow junctions formed by the technique have been fabricated into efficient Si and GaAs solar cells.

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