Synchrotron X-Ray Topographic Study of Defects in High Quality, Flux Grown Ktiopo4 Single Crystals

1993 ◽  
Vol 307 ◽  
Author(s):  
S. Wang ◽  
M. Dudley ◽  
L. K. Cheng ◽  
J. D. Bierlein
Keyword(s):  
Detailed Analysis ◽  
Single Crystals ◽  
Domain Walls ◽  
Defect Structures ◽  
Growth Sector ◽  
High Quality ◽  
X Ray ◽  
Free Region ◽  
Ferroelectric Domains ◽  
Section Topography

ABSTRACTDefect structures in large, high quality flux-grown KTP single crystals have been studied by using synchrotron white beam X-ray topography. Growth dislocations, inclusions, growth sector boundaries, growth bands and surface micro-scratches were imaged. A number of planar defects in the dislocation-free region are imaged and determined to be inversion twin lamellae (lamellar ferroelectric domains) which have never been previously reported in KTP crystals. These inversion twin lamellae were also studied by section topography. Detailed analysis of observed contrast revealed that the domain walls bounding the lamellae are faulted with a fault vector of ½[0±1±1]. This fault vector seems to be consistent with the atomic structure of KTP. A detailed analysis is presented and discussed.

Characterization of Defect Structures in 3C-SiC Single Crystals Using Synchrotron White Beam X-ray Topography

1996 ◽  
Vol 423 ◽  
Author(s):  
W. Huang ◽  
M. Dudley ◽  
C. Fazi
Keyword(s):  
Single Crystals ◽  
Stacking Faults ◽  
Interference Microscopy ◽  
Defect Structures ◽  
Growth Sector ◽  
X Ray ◽  
Partial Dislocations ◽  
White Beam ◽  
Transmission And Reflection

AbstractDefect structures in (111) 3C-SiC single crystals, grown using the Baikov technique, have been studied using Synchrotron White Beam X-ray Topography (SWBXT). The major types of defects include complex growth sector boundary structures, double positioning twins, stacking faults on { 111 } planes, inclusions and dislocations (including growth dislocations and partial dislocations bounding stacking faults). Detailed stacking fault and double positioning twin configurations are determined using a combination of Nomarski interference microscopy, SEM and white beam x-ray topography in both transmission and reflection geometries. Possible defect generation phenomena are discussed.

Characterization of Defect Structures in SiC Single Crystals Using Synchrotron X-Ray Topography

1993 ◽  
Vol 307 ◽  
Author(s):  
S. Wang ◽  
M. Dudley ◽  
C. Carter ◽  
D. Asbury ◽  
C. Fazit
Keyword(s):  
Detailed Analysis ◽  
Single Crystals ◽  
Basal Plane ◽  
Defect Structures ◽  
Dislocation Generation ◽  
Screw Dislocations ◽  
X Ray ◽  
White Beam

ABSTRACTSynchrotron white beam X-ray topography has been used to characterize defect structures in 6H-SiC wafers grown on (0001) seeds. Two major types of defects are observed: super screw dislocations approximately perpendicular to the basal plane and dislocation networks lying in the basal plane. The super screw dislocations, which have open cores, are growth dislocations. These dislocations act as sources and/or sinks for the glide dislocation networks. Detailed analysis and discussion of dislocation generation phenomena and Burgers vectors will be presented.

Effect of doping on crystalline quality of rubidium titanyl phosphate (RTP) crystals grown by the TSSG method

2014 ◽  
Vol 1698 ◽  
Author(s):  
Jianqiu Guo ◽  
Balaji Raghothamachar ◽  
Michael Dudley ◽  
Joan J. Carvajal ◽  
Ali Butt ◽  
...  
Keyword(s):  
Growth Process ◽  
Solution Growth ◽  
Crystalline Quality ◽  
Defect Structures ◽  
Growth Sector ◽  
High Quality ◽  
X Ray ◽  
Linear Defects ◽  
Top Seeded Solution Growth

ABSTRACTDefect structures in Rubidium Titanyl Phosphate (RTP) crystals (non-doped and doped) grown by the Top Seeded Solution Growth (TSSG) method were characterized using Synchrotron White Beam X-ray Topography. Main defects observed in non-doped crystals are growth sector boundaries while both growth sector boundaries and growth striations are observed in the Nb single doped and (Nb,Yb)-codoped crystals with relatively few linear defects such as dislocations. Results show that the overall crystalline quality is lowered as more doping elements are incorporated. Details of defect distributions are correlated with the growth process to facilitate high quality growth of doped RTP.

Patterns of ferroelectric domains in LiNbO3crystals characterized by X-ray topography

2005 ◽  
Vol 38 (6) ◽  
pp. 1012-1019 ◽  
Author(s):  
M. González-Mañas ◽  
B. Vallejo ◽  
M. A. Caballero
Keyword(s):  
Single Crystals ◽  
Electric Fields ◽  
Domain Walls ◽  
Complex Pattern ◽  
Growth Interface ◽  
X Ray ◽  
Diffraction Contrast ◽  
Ferroelectric Domains

A complex pattern of opposite and antiparallel periodic poled domains in LiNbO3single crystals has been studied by X-ray topography. The antiparallel periodic poled domains appear directly at the growth interface during the growth in alternating crescent-shaped (CS) domains. The measured Li/Nb ratio is higher in the CS domains than in other zones. A model of the electric fields responsible for the observed configuration is proposed, connected to the role of the Li atom. Diffraction contrast associated with the different domain walls is examined and different kinds of dislocations associated with the ferroelectric domains are also studied, determining their geometrical characters.

Three-dimensional visualization of the inner structure of single crystals by step-scanning white X-ray section topography

2006 ◽  
Vol 13 (6) ◽  
pp. 484-488 ◽  
Author(s):  
Taihei Mukaide ◽  
Kentaro Kajiwara ◽  
Takashi Noma ◽  
Kazuhiro Takada
Keyword(s):  
Single Crystals ◽  
Three Dimensional ◽  
X Ray ◽  
Section Topography

Study of Defect Structures in BeO Single Crystals by X‐Ray Diffraction Topography

1965 ◽  
Vol 36 (12) ◽  
pp. 3815-3822 ◽  
Author(s):  
S. B. Austerman ◽  
J. B. Newkirk ◽  
D. K. Smith
Keyword(s):  
Single Crystals ◽  
Defect Structures ◽  
X Ray Diffraction ◽  
X Ray

STUDY OF COMPLEX Cu-O LATTICE IN La8-xSrxCu8O20 BY HIGH RESOLUTION X-RAY ABSORPTION SPECTROSCOPY

2000 ◽  
Vol 14 (29n31) ◽  
pp. 3656-3661 ◽  
Author(s):  
N. L. SAINI ◽  
A. LANZARA ◽  
K. B. GARG ◽  
A. BIANCONI ◽  
T. ITO ◽  
...  
Keyword(s):  
High Resolution ◽  
Single Crystals ◽  
Absorption Spectroscopy ◽  
Local Structure ◽  
Three Dimensional ◽  
Xanes Spectroscopy ◽  
High Quality ◽  
X Ray ◽  
X Ray Absorption

Cu K-edge XANES spectroscopy has been used to study local structure around the Cu-site in three-dimensional oxygen deficient perovkite La 8- x Sr x Cu 8 O 20 system. The combination of E//ab and E//c polarization and high resolution XANES spectra on high quality single crystals has allowed us to distinguish the various features associated with the complex Cu-O networks in the system which have then been compared with those of the La 2- x Sr x CuO 4 system.

scholarly journals Micro-focused X-ray diffraction characterization of high-quality [6,6]-phenyl-C61-butyric acid methyl ester single crystals without solvent impurities

2013 ◽  
Vol 1 (36) ◽  
pp. 5619 ◽  
Author(s):  
Giuseppe Paternò ◽  
Anna J. Warren ◽  
Jacob Spencer ◽  
Gwyndaf Evans ◽  
Victoria García Sakai ◽  
...  
Keyword(s):  
Methyl Ester ◽  
Single Crystals ◽  
Butyric Acid ◽  
Acid Methyl Ester ◽  
X Ray Diffraction ◽  
High Quality ◽  
X Ray ◽  
Acid Methyl ◽  
Butyric Acid Methyl Ester

Theoretical and Experimental Study of the Diffraction Contrast on Magnetic Domain Walls

1982 ◽  
Vol 37 (5) ◽  
pp. 419-426 ◽  
Author(s):  
M. Polcarová ◽  
J. Brádler
Keyword(s):  
Experimental Study ◽  
Single Crystals ◽  
Domain Walls ◽  
Magnetic Domain ◽  
Dynamical Theory ◽  
X Ray Diffraction ◽  
X Ray ◽  
Magnetic Domain Walls ◽  
Integrated Intensities ◽  
Good Agreement

Dynamical theory of the X-ray diffraction on a crystal containing misfit boundary was applied to the interpretation of the contrast observed in X-ray topographs on 90° magnetic domain walls in single crystals of an Fe-Si alloy. The integrated intensities were computed for several cases corresponding to the actual conditions of experiments. Good agreement of theoretical and experi­mental results was obtained.

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