Slipline Offset of In.25Ga.75As/GaAs (100) Imaged by Atomic Force Microscopy

1993 ◽  
Vol 308 ◽  
Author(s):  
S.E. Harvey ◽  
J.E. Angelo ◽  
W.W. Gerberich

ABSTRACTWe have discovered a surface instability in In.25GaAs.75/GaAs (100) grown by molecular beam epitaxy (MBE) by direct comparison of atomic force microscopy (AFM), transmission electron microscopy (TEM) and scanning electron microscopy (SEM) investigations. While slipline spacings measured by AFM correspond fairly well with those measured by TEM and SEM, the height displacement measured by AFM was seven times greater than that inferred from dislocations observed with TEM; the number of dislocations are insufficient to produce such dramatic heights. The difference in height measured by AFM with respect to the theoretical height calculated by strain relaxation and TEM dislocation number measurement can be attributed to a surface instability.

2015 ◽  
Vol 1792 ◽  
Author(s):  
Mourad Benamara ◽  
Yuriy I. Mazur ◽  
Peter Lytvyn ◽  
Morgan E. Ware ◽  
Vitaliy Dorogan ◽  
...  

ABSTRACTThe influence of the substrate temperature on the morphology and ordering of InGaAs quantum dots (QD), grown on GaAs (001) wafers by Molecular Beam Epitaxy (MBE) under As2 flux has been studied using Transmission Electron Microscopy (TEM), Atomic Force Microscopy (AFM) and Photoluminescence (PL) measurements. The experimental results show that lateral and vertical orderings occur for temperatures greater than 520°C and that QDs self-organize in a 6-fold symmetry network on (001) surface for T=555°C. Vertical orderings of asymmetric QDs, along directions a few degrees off [001], are observed on a large scale and their formation is discussed.


2002 ◽  
Vol 722 ◽  
Author(s):  
David J. Smith ◽  
Daming Huang ◽  
Michael A Reshchikov ◽  
Feng Yun ◽  
T. King ◽  
...  

AbstractWe have investigated a novel approach for improving GaN crystal quality by utilizing a stack of quantum dots (QDs) in GaN grown on sapphire substrates by molecular beam epitaxy. The GaN films were grown on GaN/AlN buffer layers containing multiple QDs and characterized using x-ray diffraction, photoluminescence, atomic force microscopy, and transmission electron microscopy. The density of the dislocations in the films was determined by defect delineation wet chemical etching and atomic force microscopy. It was found that the insertion of a set of multiple GaN QD layers in the buffer layer effectively reduced the density of the dislocations in the epitaxial layers. As compared to a density of ∼1010cm-2in typical GaN films grown on AlN buffer layers, a density of ∼3×107cm-2was demonstrated in GaN films grown with the QD layers. Transmission electron microscopy observations confirmed termination of threading dislocations by the QD layers.


Coatings ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 652
Author(s):  
Divine Sebastian ◽  
Chun-Wei Yao ◽  
Lutfun Nipa ◽  
Ian Lian ◽  
Gary Twu

In this work, a mechanically durable anticorrosion superhydrophobic coating is developed using a nanocomposite coating solution composed of silica nanoparticles and epoxy resin. The nanocomposite coating developed was tested for its superhydrophobic behavior using goniometry; surface morphology using scanning electron microscopy and atomic force microscopy; elemental composition using energy dispersive X-ray spectroscopy; corrosion resistance using atomic force microscopy; and potentiodynamic polarization measurements. The nanocomposite coating possesses hierarchical micro/nanostructures, according to the scanning electron microscopy images, and the presence of such structures was further confirmed by the atomic force microscopy images. The developed nanocomposite coating was found to be highly superhydrophobic as well as corrosion resistant, according to the results from static contact angle measurement and potentiodynamic polarization measurement, respectively. The abrasion resistance and mechanical durability of the nanocomposite coating were studied by abrasion tests, and the mechanical properties such as reduced modulus and Berkovich hardness were evaluated with the aid of nanoindentation tests.


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