Sputtering of Lead-Based Ferroelectrics

1993 ◽  
Vol 310 ◽  
Author(s):  
K. Iijima ◽  
N. Nagao ◽  
T. Takeuchi ◽  
I. Ueda ◽  
Y. Tomita ◽  
...  
Keyword(s):  
Thin Films ◽  
High Performance ◽  
Thermal Environment ◽  
Ferroelectric Thin Film ◽  
Rf Magnetron Sputtering ◽  
Single Element ◽  
Air Conditioner ◽  
Infrared Sensors ◽  
Film Research ◽  
Pzt Thin Films

AbstractPbTiO3(PT), Pb1-xLaxTi1-x/4O3(PLT) and PbZrxTi1-xO3(PZT) thin films were prepared by rf magnetron sputtering. It was found that the thin films have remarkably large pyroelectric effect and high figures of merit for infrared sensors without poling treatment. High performance pyroelectric infrared sensors (single element and linear array) were fabricated by using the PLT(x=0.1) thin films with the new structures and the device process. This type of sensor is carried on the air conditioner to detect a thermal environment. The PZT thin films with x=0.9 showed a large remanent polarization of 46μC/cm2 and small coercive force of 28kV/cm. In addition, good endurance behavior (no degradation of Pr after 1011 cycles) was observed. Recent activities of ferroelectric thin film research in Japan is also reported.

Preparation and Pyroelectric Properties of La-Modified PbTiO8 Thin Films by Rf-Magnetron Sputtering

1996 ◽  
Vol 433 ◽  
Author(s):  
T. Kamada ◽  
R. Takayama ◽  
A. Tomozawa ◽  
S. Fujii ◽  
K. IIJIMA ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Linear Array ◽  
Rf Magnetron Sputtering ◽  
Fast Response ◽  
Pyroelectric Coefficient ◽  
Single Element ◽  
Air Conditioner ◽  
Pyroelectric Properties ◽  
Ir Sensors

AbstractHigh-quality La-modified PbTiO3 (Pb1−xLaxTi1−x/4O3; PLT) thin films were prepared by an rf-magnetron sputtering method. In this method, intermittent deposition was realized by periodical repetition of deposition and nondeposition processes. This deposition was found to enhance the horizontal grain growth of the films. The PLT thin films exhibit the phenomena named “self-polarization” and have high pyroelectric properties (pyroelectric coefficient γ of 5.0×10−8C/cm2K and low dielectric constant εr of 185) without a poling treatment. It was interestingly found that this self-polarization of the PLT thin films depends on the substrate temperature (Ts) and is based on a fairly small difference of the film composition (Pb/Ti). The pyroelectric properties were improved by means of addition of Mg to the PLT thin films. These thin films are expected to offer suitable materials for pyroelectric infrared (IR) sensors. High sensitive pyroelectric IR sensors (single element type and linear array type) were fabricated by using the PLT (x=0. 1) thin films with the new structures and the device processes. The sensors have remarkably high specific detectivity D* of 3.5×108 cm. Hz1/2/W and very fast response. A new compact IR sensing system using the linear array sensor (8 elements) has been developed for a new type of room air-conditioner.

Crystal Growth of β-FeSi2 Thin Film on (100), (110) and (111) Plane of Si and Yittria-stabilized Zirconia Substrates

2006 ◽  
Vol 980 ◽  
Author(s):  
Kensuke Akiyama ◽  
Satoru Kaneko ◽  
Takanori Kiguchi ◽  
Takashi Suemasu ◽  
Takeshi Kimura ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Crystal Growth ◽  
Magnetron Sputtering ◽  
Iron Silicide ◽  
Rf Magnetron Sputtering ◽  
Single Element ◽  
Stabilized Zirconia ◽  
Crystalline Film ◽  
Anions And Cations

AbstractIron silicide thin films were prepared on silicon (Si) and yittria-stabilized zirconia (YSZ) substrates using RF magnetron sputtering and evaporation methods. Epitaxial b-FeSi2 thin films were grown on (100) and (111) planes of Si and YSZ substrates, while noncrystallized films were deposited on (110) plane of both Si and YSZ substrates. The epitaxial relationships between the b-FeSi2 and YSZ were the same as those between b-FeSi2 and Si, in the case of (100) and (111) planes. It is possible that epitaxial b-FeSi2 film can be grown when substrates and b-FeSi2 surfaces consist of either a single element or only cations, while the crystalline film was not shown when either substrate or b-FeSi2 surface consists of a mixture of anions and cations or iron and silicon.

scholarly journals Correction: High-performance UV detectors based on room-temperature deposited amorphous Ga2O3 thin films by RF magnetron sputtering

2019 ◽  
Vol 7 (48) ◽  
pp. 15383-15383
Author(s):  
Shun Han ◽  
Xiaoling Huang ◽  
Mingzhi Fang ◽  
Weiguo Zhao ◽  
Shijie Xu ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
High Performance ◽  
Room Temperature ◽  
Rf Magnetron Sputtering ◽  
Uv Detectors

Correction for ‘High-performance UV detectors based on room-temperature deposited amorphous Ga2O3 thin films by RF magnetron sputtering’ by Shun Han et al., J. Mater. Chem. C, 2019, 7, 11834–11844.

Ten Analyses Of Sol-Gel Derived And Sputtered PZT Thin Films

1990 ◽  
Vol 200 ◽  
Author(s):  
Cheng-Chen Hsueh ◽  
Martha L. MeCartney
Keyword(s):  
Thin Films ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Rf Magnetron Sputtering ◽  
Pzt Thin Films ◽  
Ferroelectric Domains ◽  
Metal Organic ◽  
Organic Precursors ◽  
Acid Catalyzed ◽  
Sol Gel Films

ABSTRACTFerroelectric PZT thin films were prepared by sol-gel methods and RF magnetron sputtering. Sputtered PZT fast fired at 650° for 30 minutes showed microporosity. For the sol-gel route, solution precursors had a significant effect on the microstructure of the crystalline PZT films. PZT thin films derived from metal-organic precursors dissolved in n-propanol were observed to have large and microporous spherulitic grains on the order of 2 μm and phase separation in acetic acid-catalyzed films. In contrast, PZT precursors originated from alcohol exchanges with 2-methoxyethanols resulted in dense films with fine grains of ∼0.2 μm and clear evidence of ferroelectric domains. The dense sol-gel films possessed superior dielectric and ferroelectric properties.

PZT Thin Films Deposited by RF Magnetron Sputtering

2013 ◽  
Vol 302 ◽  
pp. 8-13
Author(s):  
Shun Fa Hwang ◽  
Wen Bin Li
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Annealing Temperature ◽  
Bottom Electrode ◽  
Rf Sputtering ◽  
Rf Magnetron Sputtering ◽  
Pzt Thin Films ◽  
Pzt Film ◽  
Pzt Thin Film

PZT thin film was fabricated by using RF-sputtering process, and platinum was used as bottom electrodes. The sputtering gases were Ar：O2＝25：0 sccm, Ar：O2＝20：5 sccm, or Ar：O2＝15：10 sccm. After sputtering, the PZT film was annealed for 5 minutes under O2 gas environment and at the temperature of 600 0C, 650 0C, 700 0C or 750 0C. To judge the quality of the deposited PZT film, its physical properties and electric properties were evaluated. The results indicate that the best crystallization temperature of PZT thin film is about 700 0C. Also, the roughness of the PZT thin film becomes larger with the increasing of annealing temperature. By adding more oxygen in the sputtering gas, one could have better crystallization of the PZT film. As for the electrical properties, the leakage current of PZT thin film increases with the increasing of annealing temperature. Furthermore, the ferroelectric property is affected by the crystallization amount of perovskite, the thickness of PZT thin film, and the diffusion situation between the bottom electrode and the PZT film.

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