Preparation and Pyroelectric Properties of La-Modified PbTiO8 Thin Films by Rf-Magnetron Sputtering

AbstractHigh-quality La-modified PbTiO3 (Pb1−xLaxTi1−x/4O3; PLT) thin films were prepared by an rf-magnetron sputtering method. In this method, intermittent deposition was realized by periodical repetition of deposition and nondeposition processes. This deposition was found to enhance the horizontal grain growth of the films. The PLT thin films exhibit the phenomena named “self-polarization” and have high pyroelectric properties (pyroelectric coefficient γ of 5.0×10−8C/cm2K and low dielectric constant εr of 185) without a poling treatment. It was interestingly found that this self-polarization of the PLT thin films depends on the substrate temperature (Ts) and is based on a fairly small difference of the film composition (Pb/Ti). The pyroelectric properties were improved by means of addition of Mg to the PLT thin films. These thin films are expected to offer suitable materials for pyroelectric infrared (IR) sensors. High sensitive pyroelectric IR sensors (single element type and linear array type) were fabricated by using the PLT (x=0. 1) thin films with the new structures and the device processes. The sensors have remarkably high specific detectivity D* of 3.5×108 cm. Hz1/2/W and very fast response. A new compact IR sensing system using the linear array sensor (8 elements) has been developed for a new type of room air-conditioner.

Download Full-text

Enhanced UV Photon-response of Tin Nano Cluster Loaded- laser Irradiated ZnO Thin film detector

MRS Proceedings ◽

10.1557/opl.2011.206 ◽

2011 ◽

Vol 1288 ◽

Author(s):

Rashmi Menon ◽

K. Sreenivas ◽

Vinay Gupta

Keyword(s):

Thin Film ◽

Thin Films ◽

Magnetron Sputtering ◽

Surface States ◽

Response Speed ◽

Rf Magnetron Sputtering ◽

Fast Response ◽

Zno Thin Films ◽

Zno Thin Film ◽

Photo Response

ABSTRACTZinc Oxide (ZnO), II-VI compound semiconductor, is a promising material for ultraviolet (UV) photon sensor applications due to its attractive properties such as good photoconductivity, ease processing at low temperatures and excellent radiation hardness. The rf magnetron sputtering is a suitable deposition technique due to better control over stoichiometry and deposition of uniform film. Studies have shown that the presence of surface defects in ZnO and subsequently their passivation are crucial for enhanced photo-response characteristics, and to obtain the fast response speed. Worldwide efforts are continuing to develop good quality ZnO thin films with novel design structures for realization of an efficient UV photon sensor. In the present work, UV photon sensor is fabricated using a ZnO thin films deposited by rf magnetron sputtering on the corning glass substrate. Photo-response, (Ion/Ioff) of as-grown ZnO film of thickness 100 nm is found to be 3×103 with response time of 90 ms for UV intensity of 140 μW/cm2 (λ = 365 nm). With irradiation on ZnO thin film by pulsed Nd:YAG laser (forth harmonics 266 nm), the sensitivity of the UV sensor is found to enhance. The photo-response increases after laser irradiation to 4x104 with a fast response speed of 35 ms and attributed to the change in surface states and the native defects in the ZnO thin film. Further, enhancement in the ultraviolet (UV) photo-response (8×104) of detector was observed after integrating the nano-scale islands of Sn metal on the surface of laser irradiated ZnO thin film.

Download Full-text

Crystal Growth of β-FeSi2 Thin Film on (100), (110) and (111) Plane of Si and Yittria-stabilized Zirconia Substrates

MRS Proceedings ◽

10.1557/proc-980-0980-ii05-47 ◽

2006 ◽

Vol 980 ◽

Author(s):

Kensuke Akiyama ◽

Satoru Kaneko ◽

Takanori Kiguchi ◽

Takashi Suemasu ◽

Takeshi Kimura ◽

...

Keyword(s):

Thin Film ◽

Thin Films ◽

Crystal Growth ◽

Magnetron Sputtering ◽

Iron Silicide ◽

Rf Magnetron Sputtering ◽

Single Element ◽

Stabilized Zirconia ◽

Crystalline Film ◽

Anions And Cations

AbstractIron silicide thin films were prepared on silicon (Si) and yittria-stabilized zirconia (YSZ) substrates using RF magnetron sputtering and evaporation methods. Epitaxial b-FeSi2 thin films were grown on (100) and (111) planes of Si and YSZ substrates, while noncrystallized films were deposited on (110) plane of both Si and YSZ substrates. The epitaxial relationships between the b-FeSi2 and YSZ were the same as those between b-FeSi2 and Si, in the case of (100) and (111) planes. It is possible that epitaxial b-FeSi2 film can be grown when substrates and b-FeSi2 surfaces consist of either a single element or only cations, while the crystalline film was not shown when either substrate or b-FeSi2 surface consists of a mixture of anions and cations or iron and silicon.

Download Full-text

Preparation of La-Modified Lead Titanate Thin Films by Rf-Magnetron Sputtering Method and Their Pyroelectric Properties

Japanese Journal of Applied Physics ◽

10.1143/jjap.34.l233 ◽

1995 ◽

Vol 34 (Part 2, No. 2B) ◽

pp. L233-L235 ◽

Cited By ~ 5

Author(s):

Takeshi Kamada ◽

Kazuki Komaki ◽

Shigenori Hayashi ◽

Masatoshi Kitagawa ◽

Ryoichi Takayama ◽

...

Keyword(s):

Thin Films ◽

Magnetron Sputtering ◽

Lead Titanate ◽

Rf Magnetron Sputtering ◽

Pyroelectric Properties

Download Full-text

The Properties of Ferroelectric Domain of PLT Thin Films Prepared by RF Magnetron Sputtering

MRS Proceedings ◽

10.1557/proc-0902-t03-35 ◽

2005 ◽

Vol 902 ◽

Author(s):

Hong Liu ◽

Zhaohui Pu ◽

Zhihong Wang ◽

Huidong Huang ◽

Yanrong Li ◽

...

Keyword(s):

Thin Films ◽

Magnetron Sputtering ◽

Domain Structure ◽

Rf Sputtering ◽

Piezoresponse Force Microscopy ◽

Rf Magnetron Sputtering ◽

Pyroelectric Coefficient ◽

Pure Perovskite Structure ◽

Force Microscopy ◽

Xrd Patterns

AbstractLanthanum-modified lead titanate (PLT) ferroelectric thin films were fabricated by the RF magnetron sputtering system on Pt/Ti/SiO2/Si(100) substrates. The x-ray diffraction (XRD) patterns of the PLT films showed that the pure perovskite structure was formed in the PLT thin films. The Piezoresponse Force Microscopy (PFM) was used for determining the domain structure of these films. It was found that the 90 degree domain was the main domain structure of PLT thin films. It was found that the PLT films prepared by RF sputtering have relatively large pyroelectric coefficient γ=2.20×10-8C·(cm2·K)-1 and relatively high figures of merit for current responsivity, voltage responsivity and specific detectivity.

Download Full-text

Sputtering of Lead-Based Ferroelectrics

MRS Proceedings ◽

10.1557/proc-310-455 ◽

1993 ◽

Vol 310 ◽

Cited By ~ 22

Author(s):

K. Iijima ◽

N. Nagao ◽

T. Takeuchi ◽

I. Ueda ◽

Y. Tomita ◽

...

Keyword(s):

Thin Films ◽

High Performance ◽

Thermal Environment ◽

Ferroelectric Thin Film ◽

Rf Magnetron Sputtering ◽

Single Element ◽

Air Conditioner ◽

Infrared Sensors ◽

Film Research ◽

Pzt Thin Films

AbstractPbTiO3(PT), Pb1-xLaxTi1-x/4O3(PLT) and PbZrxTi1-xO3(PZT) thin films were prepared by rf magnetron sputtering. It was found that the thin films have remarkably large pyroelectric effect and high figures of merit for infrared sensors without poling treatment. High performance pyroelectric infrared sensors (single element and linear array) were fabricated by using the PLT(x=0.1) thin films with the new structures and the device process. This type of sensor is carried on the air conditioner to detect a thermal environment. The PZT thin films with x=0.9 showed a large remanent polarization of 46μC/cm2 and small coercive force of 28kV/cm. In addition, good endurance behavior (no degradation of Pr after 1011 cycles) was observed. Recent activities of ferroelectric thin film research in Japan is also reported.

Download Full-text