Strain-Field Induced Crosshatch Formation During Molecular Beam Epitaxy of InGaAs/GaAs Films
Keyword(s):
AbstractUsing reflection electron microscopy (REM), transmission electron microscopy (TEM), and Nomarski optical microscopy we obtained direct evidence that local surface strain-fields, originated from misfit dislocations, are responsible for the formation of morphological crosshatches during molecular beam epitaxy of lattice mismatched InGaAs/GaAs layers. A mechanism is proposed to correlate the formation of the crosshatched patterns with the variation of the growth rate across the epitaxial surface under the perturbation of network shaped strain-fields in the surface.
2016 ◽
Vol 30
(20)
◽
pp. 1650269
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