Irradiation Effects of Ar-Cluster Ion Beams on Si Surfaces

1993 ◽  
Vol 316 ◽  
Author(s):  
G. H. Takaoka ◽  
G. Sugahara ◽  
R. E. Hummel ◽  
J. A. Northby ◽  
M. Sosnowski ◽  
...  
Keyword(s):  
Cluster Size ◽  
Ion Beams ◽  
Cluster Ions ◽  
Irradiation Effects ◽  
Damage Layer ◽  
Ion Energies ◽  
Cluster Ion Beams ◽  
Cluster Ion ◽  
The Mean

ABSTRACTThe effects of energetic Ar cluster ion impacts on Si(111) surfaces have been studied for cluster energies up to l5keV. The mean cluster size was about 1000 atoms, and the smaller sizes could be systematically excluded. Si samples irradiated at different cluster ion energies were analyzed by RBS, ellipsometry, and differential reflectometry. Implantation of Ar in samples irradiated with cluster ions was found by RBS to be detectable, but very small in comparison with samples irradiated with monomer ions of the same energy. The thickness of the damage layer as measured by both ellipsometry and differential reflectometry was also much smaller in the cluster ion irradiated samples.

Surface Planarization with Gas Cluster Ion Beams and Application to Wide-Bandgap Semiconductors

2018 ◽  
Vol 12 (2) ◽  
pp. 170-174 ◽  
Author(s):  
Noriaki Toyoda ◽  
Keyword(s):  
Wide Bandgap ◽  
Ion Beams ◽  
Cluster Ions ◽  
Irradiation Effects ◽  
Atomic Ions ◽  
Smoothing Effects ◽  
Cluster Ion Beams ◽  
Cluster Ion ◽  
Multiple Collisions ◽  
Bandgap Semiconductors

In this study, the fundamental sputtering effects of gas cluster ion beams (GCIBs), especially for surface planarization, are reported. Because gas cluster ions are aggregates of thousands of gas atoms, the collision process for a GCIB, with dense and multiple collisions, differs from that of atomic ions via collision cascading; thus, GCIBs have many unique irradiation effects. Among them, the low-damage and surface smoothing effects are beneficial for the planarization of wide-bandgap semiconductor wafers. The planarization of SiC, diamond, and GaN has been demonstrated using GCIB irradiation.

Sputtering yield measurements with size-selected gas cluster ion beams

2009 ◽  
Vol 1181 ◽  
Author(s):  
Kazuya Ichiki ◽  
Satoshi Ninomiya ◽  
Toshio Seki ◽  
Takaaki Aoki ◽  
Jiro Matsuo
Keyword(s):  
Cluster Size ◽  
Ion Beams ◽  
Cluster Ions ◽  
Energy Conditions ◽  
Si Substrates ◽  
Cluster Ion Beams ◽  
Cluster Ion ◽  
Sputtering Yield ◽  
Sputtering Yields ◽  
Good Agreement

AbstractAr cluster ions in the size range 1000�16000 atoms/cluster were irradiated onto Si substrates at incident energies of 10 and 20 keV and the sputtering yields were measured. Incident cluster ions were size-selected by using the time-of-flight (TOF) method. The sputtering yield was calculated from the sputtered Si volume and irradiation dose. It was found that the sputtering yields decreased with increasing incident cluster size under the same incident energy conditions. The integrated sputtering yields calculated from the sputtering yields measured for each size of Ar cluster ions, as well as the cluster size distributions, were in good agreement with experimental results obtained with nonselected Ar cluster ion beams.

Bombarding Effects of Gas Cluster Ion Beams on Sapphire Surfaces; Characteristics of Modified Layers and their Mechanical and Optical Properties

1995 ◽  
Vol 396 ◽  
Author(s):  
D. Takeuchi ◽  
J. Matsuo ◽  
I. Yamada
Keyword(s):  
Ion Beams ◽  
Solid Surfaces ◽  
Cluster Ions ◽  
Cluster Bombardment ◽  
Damage Layer ◽  
Significant Difference ◽  
Unique Material ◽  
Cluster Ion Beams ◽  
Cluster Ion ◽  
Average Size

AbstractGas cluster ions contain tens, hundreds or even more than thousands of atoms or molecules as ionized particles. It has been shown that the bombarding effects of gas cluster ions on solid surfaces are quite different from those by monomer ions and involve unique material processing characteristics. In order to make clear the bombarding effects, a study of surface modification of sapphire by Ar and CO2 gas cluster ion beams has been performed. Thickness of the damaged layer and surface roughness produced on sapphire depends strongly on cluster ion energy. Damage layer thickness on a sapphire surface bombarded by 150 keV clusters with average size of about 3000 atoms was 40Å. No significant difference was observed in IR transmittance after cluster bombardment. Mechanical properties of sapphire surfaces can be changed by cluster irradiation at a dose of 1011 ions/cm2.

scholarly journals Experimental Study on the Biological Effect of Cluster Ion Beams in Bacillus subtilis Spores

2019 ◽  
Vol 3 (2) ◽  
pp. 8 ◽  
Author(s):  
Yoshihiro Hase ◽  
Katsuya Satoh ◽  
Atsuya Chiba ◽  
Yoshimi Hirano ◽  
Shigeo Tomita ◽  
...  
Keyword(s):  
Biological Effect ◽  
Biological Effects ◽  
Model Organism ◽  
Lethal Effect ◽  
Molecular Ions ◽  
Ion Beams ◽  
Cluster Ions ◽  
Significant Difference ◽  
Cluster Ion Beams ◽  
Cluster Ion

Cluster ion beams have unique features in energy deposition, but their biological effects are yet to be examined. In this study, we employed bacterial spores as a model organism, established an irradiation method, and examined the lethal effect of 2 MeV C, 4 MeV C2, and 6 MeV C3 ion beams. The lethal effect per particle (per number of molecular ions) was not significantly different between cluster and monomer ion beams. The relative biological effectiveness and inactivation cross section as a function of linear energy transfer (LET) suggested that the single atoms of 2 MeV C deposited enough energy to kill the spores, and, therefore, there was no significant difference between the cluster and monomer ion beams in the cell killing effect under this experimental condition. We also considered the behavior of the atoms of cluster ions in the spores after the dissociation of cluster ions into monomer ions by losing bonding electrons through inelastic collisions with atoms on the surface. To the best of our knowledge, this is the first report to provide a basis for examining the biological effect of cluster ions.

Cluster Size Dependence of Etching by Reactive Gas Cluster Ion Beams

2008 ◽  
Author(s):  
Noriaki Toyoda ◽  
Iaso Yamada ◽  
Edmund G. Seebauer ◽  
Susan B. Felch ◽  
Amitabh Jain ◽  
...  
Keyword(s):  
Cluster Size ◽  
Size Dependence ◽  
Ion Beams ◽  
Cluster Ion Beams ◽  
Cluster Ion ◽  
Reactive Gas

Cluster size dependence of SiO2 thin film formation by O2 gas cluster ion beams

2009 ◽  
Vol 256 (4) ◽  
pp. 1106-1109
Author(s):  
T. Mashita ◽  
N. Toyoda ◽  
I. Yamada
Keyword(s):  
Thin Film ◽  
Cluster Size ◽  
Size Dependence ◽  
Film Formation ◽  
Ion Beams ◽  
Sio2 Thin Film ◽  
Cluster Ion Beams ◽  
Cluster Ion ◽  
Thin Film Formation

LOW-DAMAGE SURFACE TREATMENT BY GAS CLUSTER-ION BEAMS

1996 ◽  
Vol 03 (01) ◽  
pp. 891-895 ◽  
Author(s):  
M. AKIZUKI ◽  
M. HARADA ◽  
Y. MIYAI ◽  
A. DOI ◽  
T. YAMAGUCHI ◽  
...  
Keyword(s):  
Room Temperature ◽  
Ion Irradiation ◽  
Normal Incidence ◽  
Ion Beams ◽  
Low Doses ◽  
Si Substrate ◽  
Irradiation Effects ◽  
Cluster Ion Beams ◽  
Cluster Ion ◽  
Substrate Surfaces

Low-damage irradiation effects of gas cluster-ion beams have been studied at acceleration voltages below 20 kV. The surfaces of targets have been smoothened significantly by CO 2-cluster-ion irradiation at normal incidence. Si substrate surfaces have been cleaned and exhibited low damage after CO 2- and Ar-cluster-ion irradiation at low doses. In the case of CO 2-cluster-ion irradiation, SiO 2 film of about 5.5-nm thickness have grown on Si substrate at room temperature. A damaged layer of less than 2.5-nm thickness has been formed underneath the SiO 2 film.

Irradiation effects of liquid cluster ion beams on silicon surfaces

2007 ◽  
Vol 201 (19-20) ◽  
pp. 8628-8631 ◽  
Author(s):  
Gikan H. Takaoka ◽  
Masakazu Kawashita ◽  
Hidetaka Noguchi ◽  
Kazuya Nakayama
Keyword(s):  
Ion Beams ◽  
Silicon Surfaces ◽  
Irradiation Effects ◽  
Cluster Ion Beams ◽  
Cluster Ion

scholarly journals The effects of cluster size on sputtering and surface smoothing of PMMA with gas cluster ion beams

2011 ◽  
Vol 36 (3) ◽  
pp. 309-312 ◽  
Author(s):  
K. Ichiki ◽  
S. Ninomiya ◽  
T. Seki ◽  
T. Aoki ◽  
J. Matsuo
Keyword(s):  
Cluster Size ◽  
Ion Beams ◽  
Surface Smoothing ◽  
Cluster Ion Beams ◽  
Cluster Ion

High rate etching of GaAs and GaP by gas cluster ion beams

2003 ◽  
Vol 792 ◽  
Author(s):  
Masahiro Nagano ◽  
Shingo Houzumi ◽  
Noriaki Toyoda ◽  
Susumu Yamada ◽  
Shirabe Akita ◽  
...  
Keyword(s):  
Cluster Size ◽  
Ion Beam ◽  
Ion Beams ◽  
High Rate ◽  
Cluster Ion Beams ◽  
Cluster Ion ◽  
New Processing ◽  
Gas Cluster Ion Beam ◽  
Ar Gas ◽  
Sputtering Yields

ABSTRACTGas cluster ion beam (GCIB) techniques have recently been proposed as new processing methods. We have been investigating the characteristics of GCIB techniques through sputtering GaAs and GaP by Ar gas cluster ion beams as a function of cluster size and acceleration energy. The Ar cluster size was selected by a magnetic spectrometer, and was obtained from the mass spectra measured by a time of flight mass spectrometer. The average sputtering yields of GaAs and GaP were 0–47 and 0–66 atoms/ion for 5–30 k V, respectively. The sputtering yields of GaAs and GaP were higher than those of an Ar monomer ion.

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