Hot Electron Phenomena in Transport Across Metal-Semiconductor Structures

MRS Proceedings ◽

10.1557/proc-318-117 ◽

1993 ◽

Vol 318 ◽

Author(s):

R. Ludeke ◽

A. Bauer

Keyword(s):

Impact Ionization ◽

Hot Electron ◽

Ballistic Electron Emission Microscopy ◽

Scattering Parameters ◽

Hot Carriers ◽

Electron Hole ◽

Semiconductor Structures ◽

Ballistic Electron ◽

Electron Hole Pair ◽

Spectroscopic Tool

ABSTRACTBallistic Electron Emission Microscopy (BEEM) is shown to be a versatile spectroscopic tool to investigate scattering phenomena of energetic electrons. Two examples are given for obtaining numerical values of scattering parameters. Thus the elastic and inelastic mean free paths are deduced from model fits to attenuation data for thin Pd films deposited on Si(111) and Si(100) substrates. In the second example, the quantum yield for electron-hole pair production through impact ionization of hot carriers injected into Si(111) is directly measured over an energy range from 1-7 eV.

Download Full-text

Electron-hole pair creation and metal/semiconductor interface scattering observed by ballistic-electron-emission microscopy

Physical Review B ◽

10.1103/physrevb.45.6325 ◽

1992 ◽

Vol 45 (11) ◽

pp. 6325-6328 ◽

Cited By ~ 25

Author(s):

E. Y. Lee ◽

L. J. Schowalter

Keyword(s):

Electron Emission ◽

Pair Creation ◽

Hole Pair ◽

Ballistic Electron Emission Microscopy ◽

Electron Hole ◽

Semiconductor Interface ◽

Ballistic Electron ◽

Interface Scattering ◽

Electron Hole Pair ◽

Emission Microscopy

Download Full-text

Quenching of impact ionization in heavy-ion induced electron-hole pair plasma tracks in wide bandwidth avalanche photodetectors

Journal of Applied Physics ◽

10.1063/1.3290966 ◽

2010 ◽

Vol 107 (8) ◽

pp. 084501 ◽

Cited By ~ 1

Author(s):

Jamie Stuart Laird ◽

Shinobu Onoda ◽

Toshio Hirao ◽

Larry Edmonds

Keyword(s):

Impact Ionization ◽

Heavy Ion ◽

Hole Pair ◽

Electron Hole ◽

Wide Bandwidth ◽

Avalanche Photodetectors ◽

Pair Plasma ◽

Electron Hole Pair

Download Full-text

Hot-electron scattering at Schottky interfaces measured by temperature dependent ballistic electron emission microscopy

Applied Surface Science ◽

10.1016/s0169-4332(96)00215-2 ◽

1996 ◽

Vol 104-105 ◽

pp. 274-281 ◽

Cited By ~ 9

Author(s):

C.A. Ventrice ◽

V.P. LaBella ◽

G. Ramaswamy ◽

H.-P. Yu ◽

L.J. Schowalter

Keyword(s):

Electron Scattering ◽

Electron Emission ◽

Hot Electron ◽

Ballistic Electron Emission Microscopy ◽

Temperature Dependent ◽

Ballistic Electron ◽

Emission Microscopy

Download Full-text

Hot-electron effects and oxide degradation in MOS structures studied with ballistic electron emission microscopy

IBM Journal of Research and Development ◽

10.1147/rd.444.0517 ◽

2000 ◽

Vol 44 (4) ◽

pp. 517-534 ◽

Cited By ~ 16

Author(s):

R. Ludeke

Keyword(s):

Electron Emission ◽

Hot Electron ◽

Ballistic Electron Emission Microscopy ◽

Ballistic Electron ◽

Oxide Degradation ◽

Emission Microscopy ◽

Mos Structures ◽

Electron Effects

Download Full-text

Conduction band energies and hot-electron transport characteristics of epitaxial Sc2O3∕Si (111) studied by ballistic electron emission microscopy and internal photoemission

Applied Physics Letters ◽

10.1063/1.2757150 ◽

2007 ◽

Vol 91 (4) ◽

pp. 042901 ◽

Cited By ~ 8

Author(s):

W. Cai ◽

S. E. Stone ◽

J. P. Pelz ◽

L. F. Edge ◽

D. G. Schlom

Keyword(s):

Electron Transport ◽

Conduction Band ◽

Electron Emission ◽

Hot Electron ◽

Ballistic Electron Emission Microscopy ◽

Internal Photoemission ◽

Ballistic Electron ◽

Emission Microscopy ◽

Hot Electron Transport

Download Full-text

Hot electron transport through metal–oxide–semiconductor structures studied by ballistic electron emission spectroscopy

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.587821 ◽

1995 ◽

Vol 13 (4) ◽

pp. 1830 ◽

Cited By ~ 30

Author(s):

R. Ludeke

Keyword(s):

Electron Transport ◽

Metal Oxide ◽

Electron Emission ◽

Emission Spectroscopy ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Hot Electron ◽

Semiconductor Structures ◽

Ballistic Electron ◽

Hot Electron Transport

Download Full-text

Imaging and spectroscopy of Au nanoclusters in yttria-stabilized zirconia films using ballistic electron/hole emission microscopy

RSC Advances ◽

10.1039/c4ra10236c ◽

2014 ◽

Vol 4 (100) ◽

pp. 57337-57342 ◽

Cited By ~ 9

Author(s):

Dmitry Filatov ◽

Davud Guseinov ◽

Ivan Antonov ◽

Alexander Kasatkin ◽

Oleg Gorshkov

Keyword(s):

Dielectric Films ◽

Metal Nanoclusters ◽

Ballistic Electron Emission Microscopy ◽

Size Quantization ◽

Stabilized Zirconia ◽

Electron Hole ◽

Au Nanoclusters ◽

Ballistic Electron ◽

Emission Microscopy ◽

Imaging And Spectroscopy

Ballistic electron emission microscopy was applied to imaging and spectroscopy of metal nanoclusters (NCs) in dielectric films. The possibility of measuring the size quantization energies of the NCs was demonstrated.

Download Full-text