The Effect of Impurities on the Ideal Tensile Strength of Covalent Crystals - Ab-Initio Quantum Molecular Dynamics Calculations
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AbstractUsing first-principles electronic structure calculations in the local density approximation combined with lattice dynamics, we investigate the effect of III/V impurities on the ideal strength of covalent solids (C, Si, and Ge). Our results show that undoped crystalline solids are stronger in tension along [111] than n-type crystalline solids. P doping has a negligible effect on ideal tensile strength, while n-type doping causes a small reduction in strength of about 6%. The n-type impurity effect is due to the negative (repulsive) contribution from the bottom state of the distorted conduction band to the ideal strength of the solid.
1972 ◽
Vol 330
(1582)
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pp. 291-308
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1994 ◽
Vol 70
(1)
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pp. 53-62
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2007 ◽
Vol 561-565
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pp. 1657-1660
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1996 ◽
Vol 11
(9)
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pp. 2206-2213
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