Structure and Kinetics Study of MOCVD Lead Oxide (PbO) from Lead BIS-Tetramethylheptadionate (Pb(thd)2)

1993 ◽  
Vol 335 ◽  
Author(s):  
Warren C. Hendricks ◽  
Seshu B. Desu ◽  
Ching Yi Tsai
Keyword(s):  
Thin Films ◽  
Computer Model ◽  
Rate Constants ◽  
Lead Titanate ◽  
Lead Oxide ◽  
Deposition Process ◽  
Reactive Species ◽  
Kinetics Study ◽  
Deposition Rates ◽  
The Individual

AbstractLead bis-tetramethylheptadionate (Pb(thd)2) is an extremely useful precursor for the preparation of lead-based thin films such as PZT, lead titanate, etc. In this paper, lead oxide was deposited from Pb(thd)2 in a hot-walled CVD reactor using oxygen as a reactive species and diluent gas. XRD and SEM were used to determine the structure of the material deposited by the CVD process. The CVD process consistently produced the monoxide of lead which was found to consist of a mixture of orthorhombic PbO with small tetragonal PbO platelets. TEM was used to determine the orientation of the individual platelets which was found to be consistently normal to the <201> family of zone axes. Deposition rates were determined and simulated using an FEM computer model to determine the rate constants for the overall deposition process.

Characteristics of sol-gel derived PZT thin films with lead oxide cover layers and lead titanate interlayers

1996 ◽  
Vol 31 (17) ◽  
pp. 4559-4568 ◽  
Author(s):  
C. Lee ◽  
S. Kawano ◽  
T. Itoh ◽  
T. Suga
Keyword(s):  
Thin Films ◽  
Lead Titanate ◽  
Lead Oxide ◽  
Sol Gel ◽  
Pzt Thin Films

Microstructure and Surface Structure Evolution in AlCu Polycrystalline Thin Films

1999 ◽  
Vol 562 ◽  
Author(s):  
Adriana E. Lita ◽  
John E. Sanchez
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Fiber Orientation ◽  
Film Formation ◽  
Deposition Process ◽  
Structure Evolution ◽  
Average Roughness ◽  
Deposition Rates ◽  
Cu Films ◽  
Polycrystalline Thin Films

ABSTRACTThe evolution of crystallographic texture, grain size and surface morphology in magnetron sputter deposited Al-0.5wt.% Cu polycrystalline thin films is reported as a function of film thickness for SiO2 and SiO2/Ti underlayers for several deposition rates. Regardless of the underlayer type, the initial ≈ 10 nm of the Al-Cu films is nearly randomly oriented, with the films developing a (111) out-of-plane texture which increases in strength with thickness during deposition. The AlCu films on sputtered Ti underlayers developed an exact (111) fiber orientation while Al-Cu films on oxide substrates were offset ≈ 5° from exact fiber orientation. Higher deposition rates were found to result in slightly better (111) textured 20 nm AlCu films. The surface morphology of films, determined by Atomic Force Microscopy (AFM), revealed two regimes of average roughness (Rrms) evolution during deposition. Rrms decreased early in the deposition process, followed by a roughening regime where Rrms increased with thickness. These results are discussed in terms of mechanisms such as grain growth, which help to determine microstructure development during film formation from the vapor.

An Investigation into the Growth of Lead Titanate by MOCVD Using a Pyrolytic and a Sputter Assisted Plasma Process

1986 ◽  
Vol 75 ◽  
Author(s):  
Crofton J. Brierley ◽  
Laurence Considine ◽  
Rajinder S. Sethi ◽  
Roger W. Whatmore
Keyword(s):  
Thin Films ◽  
Lead Titanate ◽  
Film Growth ◽  
Plasma Deposition ◽  
Deposition Process ◽  
Titanium Isopropoxide ◽  
Thin Film Growth ◽  
Plasma Process ◽  
X Ray ◽  
Edax Analysis

AbstractThe thin film growth of PbTiO3 by MOCVD has been investigated using both a pyrolytic process and a sputter assisted plasma deposition process. In the first process, lead tertiary butoxide and titanium iso-propoxide are introduced to a low pressure reactor simultaneously to deposit thin films containing lead and titanium onto a hot substrate (400–500 °C). In the alternative process lead is sputtered from a magnetron target in the presence of titanium isopropoxide vapour. Thin films containing lead and titanium are deposited onto a substrate which need not be heated. X-ray and EDAX analysis indicate the presence of Ti02 and elemental lead in the as grown layers. Oxygen annealing of ihese layers at 900° and 1100°C leads to the formation of polycrystalline PbTiO3 and where the substrate is silicon, a PbO/SiO2 glass phase.

Ferroelectric Properties of Al-doped Lead Titanate Zirconate Thin Films Prepared by Chemical Solution Deposition Process

2000 ◽  
Vol 39 (Part 1, No. 9B) ◽  
pp. 5426-5428 ◽  
Author(s):  
Takashi Iijima ◽  
Gang He ◽  
Zheng Wang ◽  
Hideki Tsuboi ◽  
Kunio Hiyama ◽  
...  
Keyword(s):  
Thin Films ◽  
Lead Titanate ◽  
Chemical Solution Deposition ◽  
Ferroelectric Properties ◽  
Deposition Process ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Lead Titanate Zirconate

Electrical and Physical Properties of Al and Nb Doped PbTiO3 Ceramic Thin Films

2005 ◽  
Vol 475-479 ◽  
pp. 1587-1590
Author(s):  
Bo Ping Zhang ◽  
Jing Feng Li ◽  
Yan Dong ◽  
Takashi Iijima
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Dielectric Constant ◽  
Ferroelectric Properties ◽  
Deposition Process ◽  
Solution Deposition ◽  
Co Doping ◽  
Ceramic Thin Films ◽  
Maximum Dielectric Constant ◽  
The Individual

A series of Pb(Ti1-xAlx)O3, Pb(Ti1-xNbx)O3 and Pb(Ti1-xAlx/2Nbx/2)O3 thin films were fabricated onto Pt/Ti/SiO2/Si(100) substrates using a chemical solution deposition process. The dielectric constant of the Pb(Ti1-xAlx)O3 thin films increased with increase of aluminum content, while a maximum dielectric constant value was observed for the Pb(Ti1-xNbx)O3 and Pb(Ti1 xAlx/2Nbx/2)O3 thin films when the doping contents were 10 and 20 mol%, respectively. The dielectric constant of the Pb(Ti0.8Al0.1Nb0.1)O3 thin film is about 600, being two times higher than those of Pb(Ti0.9Al0.1)O3 and Pb(Ti0.9Nb0.1)O3 thin films. The Pb(Ti0.8Al0.1Nb0.1)O3 thin film showed less than 10-7 A/cm2 current density at ±150 kV/cm, being superior to the leakage property of the PbTiO3, Pb(Ti0.9Al0.1)O3 and Pb(Ti0.9Nb0.1)O3 thin films. The co-doping of aluminum and niobium is more effective to increase the dielectric and ferroelectric properties as compared with the individual aluminum or niobium doping.

Investigation of ultra-thin films of YBa2Cu3O7−δ grown on MgO

1990 ◽  
Vol 48 (4) ◽  
pp. 6-7
Author(s):  
S.K. Streiffer ◽  
C.B. Eom ◽  
J.C. Bravman ◽  
T.H. Geballet
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Deposition Process ◽  
Nucleation And Growth ◽  
Multilayer Structures ◽  
Rf Power ◽  
Oxygen Loss ◽  
Transmission Electron ◽  
Single Target ◽  
Mtorr Argon

The study of very thin (<15 nm) YBa2Cu3O7−δ (YBCO) films is necessary both for investigating the nucleation and growth of films of this material and for achieving a better understanding of multilayer structures incorporating such thin YBCO regions. We have used transmission electron microscopy to examine ultra-thin films grown on MgO substrates by single-target, off-axis magnetron sputtering; details of the deposition process have been reported elsewhere. Briefly, polished MgO substrates were attached to a block placed at 90° to the sputtering target and heated to 650 °C. The sputtering was performed in 10 mtorr oxygen and 40 mtorr argon with an rf power of 125 watts. After deposition, the chamber was vented to 500 torr oxygen and allowed to cool to room temperature. Because of YBCO’s susceptibility to environmental degradation and oxygen loss, the technique of Xi, et al. was followed and a protective overlayer of amorphous YBCO was deposited on the just-grown films.

Electron microscopic characterization of diamond thin films and substrates for diamond heteroepitaxial growth

1989 ◽  
Vol 47 ◽  
pp. 592-593
Author(s):  
J.B. Posthill ◽  
R.P. Burns ◽  
R.A. Rudder ◽  
Y.H. Lee ◽  
R.J. Markunas ◽  
...  
Keyword(s):  
Thin Films ◽  
Wide Band ◽  
Deposition Process ◽  
Heteroepitaxial Growth ◽  
Electron Microscopic ◽  
Wide Band Gap ◽  
Lattice Matching ◽  
Different Types ◽  
Diamond Thin Films

Because of diamond’s wide band gap, high thermal conductivity, high breakdown voltage and high radiation resistance, there is a growing interest in developing diamond-based devices for several new and demanding electronic applications. In developing this technology, there are several new challenges to be overcome. Much of our effort has been directed at developing a diamond deposition process that will permit controlled, epitaxial growth. Also, because of cost and size considerations, it is mandatory that a non-native substrate be developed for heteroepitaxial nucleation and growth of diamond thin films. To this end, we are currently investigating the use of Ni single crystals on which different types of epitaxial metals are grown by molecular beam epitaxy (MBE) for lattice matching to diamond as well as surface chemistry modification. This contribution reports briefly on our microscopic observations that are integral to these endeavors.

Pyroelectric properties of sol-gel processed lanthanum modified lead titanate ferroelectric thin films

1998 ◽  
Vol 08 (PR9) ◽  
pp. Pr9-155-Pr9-158 ◽  
Author(s):  
M. Algueró ◽  
M. L. Calzada ◽  
L. Pardo
Keyword(s):  
Thin Films ◽  
Lead Titanate ◽  
Sol Gel ◽  
Ferroelectric Thin Films ◽  
Pyroelectric Properties
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