Schottky Barrier Heights of Refractory Metals on Silicon

1986 ◽  
Vol 71 ◽  
Author(s):  
M. O. Aboelfotoh
Keyword(s):  
Schottky Barrier ◽  
Refractory Metal ◽  
Energy Gap ◽  
Silicide Phase ◽  
Metal Silicide ◽  
Measured Temperature ◽  
Experimental Accuracy ◽  
Barrier Heights ◽  
Increasing Temperature ◽  
P Type

AbstractMeasurements of Schottky-barrier heights in the temperature range 175-295 K for refractory metal-silicon and corresponding silicide-silicon interfaces are presented. Refractory metal silicide formation is shown to have only a small effect on the barrier height. The n-type and p-type barrier heights for both the metal and the reacted silicide phase are shown to decrease with increasing temperature with the stun equal, within the experimental accuracy, to the indirect energy gap of silicon at any measured temperature. These results indicate that the temperature dependence of the barrier heights is mainly due to that of the indirect energy gap in the silicon.

Schottky Barrier Heights of Cr Contacts on n- and p-Type 6H-SiC

1997 ◽  
Vol 14 (6) ◽  
pp. 460-463 ◽  
Author(s):  
Zhang Yong-gang ◽  
Li Ai-zhen ◽  
A G Milnes
Keyword(s):  
Schottky Barrier ◽  
Barrier Heights ◽  
P Type

Increased Schottky barrier heights for Au on n- and p-type GaN using cryogenic metal deposition

2006 ◽  
Vol 89 (12) ◽  
pp. 122106 ◽  
Author(s):  
Hung-Ta Wang ◽  
S. Jang ◽  
T. Anderson ◽  
J. J. Chen ◽  
B. S. Kang ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Metal Deposition ◽  
Barrier Heights ◽  
P Type

scholarly journals Fluorographane: a promising material for bipolar doping of MoS2

2015 ◽  
Vol 17 (41) ◽  
pp. 27636-27641 ◽  
Author(s):  
Deniz Çakır ◽  
Francois M. Peeters
Keyword(s):  
Schottky Barrier ◽  
First Principles ◽  
Promising Material ◽  
First Principles Calculations ◽  
Barrier Heights ◽  
P Type

Using first principles calculations we show that one can realize vanishing n-type/p-type Schottky barrier heights when contacting MoS2 to fluorographane.

TEMPERATURE DEPENDENCE OF ELECTRICAL CHARACTERISTICS OF Cr/p–Si(100) SCHOTTKY BARRIER DIODES

2008 ◽  
Vol 22 (14) ◽  
pp. 2309-2319 ◽  
Author(s):  
K. ERTURK ◽  
M. C. HACIISMAILOGLU ◽  
Y. BEKTORE ◽  
M. AHMETOGLU
Keyword(s):  
Temperature Dependence ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Thermionic Emission ◽  
Electrical Characteristics ◽  
Schottky Barrier Diodes ◽  
Semiconductor Interface ◽  
Linear Portion ◽  
Barrier Heights ◽  
P Type

The electrical characteristics of Cr / p – Si (100) Schottky barrier diodes have been measured in the temperature range of 100–300 K. The I-V analysis based on thermionic emission (TE) theory has revealed an abnormal decrease of apparent barrier height and increase of ideality factor at low temperature. The conventional Richardson plot exhibits non-linearity below 200 K with the linear portion corresponding to activation energy 0.304 eV and Richardson constant (A*) value of 5.41×10-3 Acm-2 K -2 is determined from the intercept at the ordinate of this experimental plot, which is much lower than the known value of 32 Acm-2 K -2 for p-type Si . It is demonstrated that these anomalies result due to the barrier height inhomogeneities prevailing at the metal-semiconductor interface. Hence, it has been concluded that the temperature dependence of the I-V characteristics of the Cr/p – Si Schottky barrier diode can be successfully explained on the basis of TE mechanism with a Gaussian distribution of the barrier heights. Furthermore, the value of the Richardson constant found is much closer than that obtained without considering the inhomogeneous barrier heights.

Electrical Properties of Epitaxial Silicide-Silicon Interfaces

1985 ◽  
Vol 54 ◽  
Author(s):  
R. T. Tung ◽  
A. F. J. Levi ◽  
J. M. Gibson ◽  
K. K. Ng ◽  
A. Chantre
Keyword(s):  
Fermi Level ◽  
Single Crystal ◽  
Schottky Barrier ◽  
Surface Region ◽  
Ideal Behavior ◽  
Near Surface ◽  
Barrier Heights ◽  
Transmission Electron ◽  
Current Voltage ◽  
P Type

ABSTRACTThe Schottky barrier heights of single crystal NiSi2 layers on Si(111) have been studied by current-voltage, capacitance-voltage and activation energy techniques. Near ideal behavior is found for Schottky barriers grown on substrates cleaned at ∼820°C in ultrahigh vacuum. The Fermi level positions at the interfaces of single crystal type A and type B NiSi2 are shown to differ by ∼0.14 eV. Transmission electron microscopy demonstrated the epitaxial perfection of these suicide layers. At a cleaning temperature of 1050° C, the near surface region of lightly doped n-type Si was converted to p-type. The presence of a p-n junction was directly revealed by spreading resistance measurements and resulted in a high apparent Schottky barrier height (≥0.75 eV) which no longer bears immediate relationship to the interface Fermi level position.

Electrical Properties of Copper Silicide/Silicon Interfaces

1993 ◽  
Vol 320 ◽  
Author(s):  
B.G. Svensson
Keyword(s):  
Electrical Properties ◽  
Schottky Barrier ◽  
Deep Level ◽  
Ion Beam ◽  
Energy Levels ◽  
Copper Silicide ◽  
Barrier Heights ◽  
Barrier Formation ◽  
Transient Spectroscopy ◽  
P Type

ABSTRACTThe electrical properties of Cu/Si(100) and Cu3Si/Si(100) interfaces have been studied using both n- and p-type silicon samples. Current-voltage and capacitance-voltage measurements were performed in the temperature range 80-295 K in order to monitor Schottky barrier formation and electrical carrier concentration profiles. Deep-level transient spectroscopy was employed to observe Cu-related energy levels in the forbidden band gap of Si, and different ion beam analysis techniques were applied to study the interfacial reaction between Cu and Si. Emphasis is put on determination of Schottky barrier heights and their variation with temperature, dopant passivation by Cu atoms and interaction of Cu with irradiation-induced point defects in silicon.

Photovoltaic effect and Schottky barriers in the Au–In1−xGaxSb system

1980 ◽  
Vol 58 (1) ◽  
pp. 63-67 ◽  
Author(s):  
W. J. Keeler ◽  
A. P. Roth ◽  
E. Fortin
Keyword(s):  
Temperature Dependence ◽  
Schottky Barrier ◽  
System Analysis ◽  
Photovoltaic Effect ◽  
Alloy System ◽  
Schottky Barriers ◽  
Type Region ◽  
Barrier Heights ◽  
P Type

The temperature dependence of the photovoltaic effect between 6 and 300 K has been measured on the Au–In1−xGaxSb system. Analysis of the data gives the Schottky barrier heights across the alloy system. In the n-type region of the system (InSb rich) the barrier is found to be [Formula: see text] while in the p-type region (GaSb rich) it is [Formula: see text].

CoSi2/Si(111) Interface Structure and its Influence on the Schottky Barrier

1993 ◽  
Vol 320 ◽  
Author(s):  
J. P. Sullivan ◽  
W. R. Graham ◽  
F. Schrey ◽  
D. J. Eaglesham ◽  
R. Kola ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Film Growth ◽  
High Vacuum ◽  
Growth Conditions ◽  
Interface Structure ◽  
Ultra High Vacuum ◽  
Plan View ◽  
Barrier Heights ◽  
Interface Reconstruction ◽  
P Type

ABSTRACTThe interface structure and Schottky barrier height Of CoSi2/Si(111) interfaces may be controlled by manipulating the thin film growth conditions. Single crystal CoSi2 films on Si(111) were prepared by ultra-high vacuum processing, analyzed electrically by currentvoltage techniques, and characterized structurally by plan-view and cross-section high resolution transmission electron microscopy (HRTEM) and transm-ission electron diffraction (TED). Interfaces exhibiting n-type barrier heights ranging from 0.27 to 0.69 eV, and p-type barrier heights ranging from 0.43 eV to over 0.71 eV were prepared -by varying the processing conditions. HRTI3M and TED revealed the existence of a √3 × √3 interface reconstruction for the low barrier n-type/high barrier p-type samples. Possible models of the interface reconstruction are discussed.

Electrical Properties and Schottky Barriers of Metal-Semiconductor Interfaces

1990 ◽  
Vol 181 ◽  
Author(s):  
M.O. Aboelfotoh
Keyword(s):  
Electrical Properties ◽  
Temperature Dependence ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Fermi Level Pinning ◽  
Barrier Heights ◽  
Semiconductor Interfaces ◽  
Barrier Formation ◽  
Indirect Band Gap ◽  
P Type

ABSTRACTThe electrical properties of metal/Si(100) and metal/Ge(100) interfaces formed by the deposition of metal on both n-type and p-type Si(100) and Ge(100) have been studied in the temperature range 77-295 K with the use of current- and capacitance-voltage techniques. Compound formation is found to have very little or no effect on the Schottky-barrier height and its temperature dependence. For silicon, the barrier height and its temperature dependence are found to be affected by the metal. For germanium, on the other hand, the barrier height and its temperature dependence are unaffected by the metal. The temperature dependence of the Si and Ge barrier heights is found to deviate from the predictions of recent models of Schottky-barrier formation based on the suggestion of Fermi-level pinning in the center of the semiconductor indirect band gap.

Electrical Properties of AuZnCr Multilayer Metallizations to InP

1994 ◽  
Vol 337 ◽  
Author(s):  
Thomas clausen ◽  
Otto leistiko
Keyword(s):  
Electrical Properties ◽  
Schottky Barrier ◽  
Limiting Factor ◽  
Barrier Heights ◽  
High Annealing ◽  
P Type ◽  
Multilayer Metallization ◽  
Semiconductor Contact ◽  
Range Of Values ◽  
Quality Metal

ABSTRACTThe electrical properties of a Au/Cr/(Au)/Zn/Au (50/25/(50)/100/2 nm) multilayer metallization to n- and p-type InP have been investigated. The results consistently show that it is possible to modulate the effective Schottky barrier height of the metal-semiconductor contact over a large range of values extending from ∼0 eV for contacts to p-type InP to values close to the bandgap of the InP (∼1.3 eV) for contacts to n-type InP. The limiting factor in the developement of the highest quality metal-semiconductor diodes to n-type InP with very high Schottky barrier heights is found to be diffusion of Au elements at high annealing temperatures above 500°C, as determined from I-V, C-V and DLTS plots.

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