Modelling of Temperature Distribution of Semiconductors During Rapid Thermal Processing

1994 ◽  
Vol 342 ◽  
Author(s):  
Andreas Tillmann
Keyword(s):  
Temperature Distribution ◽  
Material Property ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Two Dimensional ◽  
Temperature Uniformity ◽  
Temperature Dependent ◽  
Incident Intensity ◽  
Circular Test ◽  
Contour Plots

ABSTRACTThe modelling of temperature distribution on semiconductor wafers in common RTP-equipment is described. The incident intensity distribution on the wafer is calculated using raytracing. Based on this distribution the temperature distribution on the wafer is determined solving the two-dimensional heat conduction equation. If the dependence of a considered material property on the process temperature is known, the calculated temperature distribution can be convened to a distribution of this parameter.The distinctive feature of the described algorithms is the two-dimensional treatment of the distributions using a grid of ring segments, each with equal area. This grid is identical to the usual circular test patterns of multipoint measurement equipment. This is convenient since the evaluation of temperature uniformity in RTP equipment is done mostly by mapping an appropriate temperature dependent material property. All calculated distributions can be presented by contour plots as well as 3-D plots. This results in a very suitable method to compare simulated and experimental wafer maps.The agreement between simulated and experimental temperature distributions is shown.

scholarly journals A Design Method to Improve Temperature Uniformity on Wafer for Rapid Thermal Processing

Electronics ◽  
2018 ◽  
Vol 7 (10) ◽  
pp. 213
Author(s):  
Peng Huang ◽  
Hongguan Yang
Keyword(s):  
Temperature Distribution ◽  
Thermal Processing ◽  
Design Method ◽  
Rapid Thermal Processing ◽  
Design Parameters ◽  
Temperature Uniformity ◽  
Uniform Temperature ◽  
Simple Method ◽  
Uniform Temperature Distribution ◽  
Proposed Model

Single-wafer rapid thermal processing (RTP) is widely used in semiconductor manufacturing. Achieving temperature uniformity on silicon wafer is a major challenge in RTP control. In this work, a lamp configuration including five concentric lamp zones is designed to obtain uniform temperature distribution on the wafer. An optics-based model is developed to determine the optimal lamp design parameters, and a uniformity criterion is proposed to evaluate the effective irradiance distribution of the tungsten–halogen lamps on the wafer. This method can be used to determine geometric parameters of the lamp array in order to achieve uniform temperature distribution on the wafer. A realistic simulation of a cold wall RTP system with five lamp rings and a 200-mm wafer is performed. The proposed model makes way for a simple method for determining the optimal lamp design parameters in RTP systems.

Improvement of Temperature Uniformity in Rapid Thermal Processing Systems Using Multivariable Control

1991 ◽  
Vol 224 ◽  
Author(s):  
S. A. Norman ◽  
C. D. Schaper ◽  
S. P. Boyd
Keyword(s):  
Steady State ◽  
Temperature Distribution ◽  
Thermal Processing ◽  
Numerical Technique ◽  
Rapid Thermal Processing ◽  
Temperature Uniformity ◽  
Wafer Temperature ◽  
Scalar Control ◽  
Steady State Temperature ◽  
Knob Control

AbstractDuring rapid thermal processing (RTP) of a semiconductor wafer, maintenance of nearuniform wafer temperature distribution is necessary. This paper addresses the problem of insuring temperature uniformity in a cylindrical RTP system with multiple concentric circular lamps.A numerical technique is presented for optimizing steady-state temperature distribution by independently varying the power radiated by each lamp. It is shown for a simulated system, over a wide range of temperature setpoints, that the temperature uniformity achievable with multivariable (“multiple knob”) control of lamp powers is significantly better than that achievable with scalar (“single knob”) control.The difficulties of using scalar control in RTP are more severe in the case of temperature trajectory design than in the case of steady-state temperature maintenance. For example, with scalar control the rate of temperature increase during ramping is limited because temperature nonuniformity can cause slip defects in the wafer. A numerical technique is presented for designing multivariable lamp power trajectories to obtain near-optimal temperature uniformity while wafer temperature tracks a specified ramp, resulting in slip-free ramp rates much faster than those achievable with scalar control.

Monte Carlo Thermal Model of an Integrating Light Pipe for Rapid Thermal Processing

1996 ◽  
Vol 429 ◽  
Author(s):  
J. C. Thomas ◽  
D. P. Dewitt
Keyword(s):  
Monte Carlo ◽  
Thermal Processing ◽  
Monte Carlo Model ◽  
Rapid Thermal Processing ◽  
Width Ratio ◽  
Temperature Uniformity ◽  
System Parameters ◽  
Light Pipe ◽  
End Wall ◽  
Cavity Width

AbstractA Monte Carlo model is developed to simulate transient wafer heating as a function of system parameters in a kaleidoscope- or integrating light-pipe type cavity with square cross-section. Trends in wafer temperature uniformity are examined as a function of length-to-width ratio, cavity width, and the number of heating lamps. The effect on temperature determination by a radiometer placed in the bottom end wall of the cavity is simulated.

Optimization of Process Parameter and Temperature Uniformity On Wafers For Rapid Thermal Processing

1995 ◽  
Vol 387 ◽  
Author(s):  
Andreas Tillmann
Keyword(s):  
Standard Deviation ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Oxide Thickness ◽  
Simulation Software ◽  
Process Parameter ◽  
Parameter Distribution ◽  
Temperature Uniformity ◽  
New Strategy ◽  
The Impact

AbstractA new strategy based algorithm to optimize process parameter uniformity (e.g.sheet resistance, oxide thickness) and temperature uniformity on wafers in a commercially available Rapid Thermal Processing (RTP) system with independent lamp control is described. The computational algorithm uses an effective strategy to minimize the standard deviation of the considered parameter distribution. It is based on simulation software which is able to calculate the temperature and resulting parameter distribution on the wafer for a given lamp correction table. A cyclical variation of the correction values of all lamps is done while minimizing the standard deviation of the considered process parameter. After the input of experimentally obtained wafer maps the optimization can be done within a few minutes. This technique is an effective tool for the process engineer to use to quickly optimize the homogeneity of the RTP tool for particular process requirements. The methodology will be shown on the basis of three typical RTP applications (Rapid Thermal Oxidation, Titanium Silicidation and Implant Annealing). The impact of variations of correction values for single lamps on the resulting process uniformity for different applications will be discussed.

Simulation of Temperature Effects during Rapid Thermal Processing

1989 ◽  
Vol 146 ◽  
Author(s):  
R. Kakoschek ◽  
E. BuβMann
Keyword(s):  
Stationary State ◽  
Excellent Agreement ◽  
Thermal Processing ◽  
Temperature Effects ◽  
Rapid Thermal Processing ◽  
Nonuniform Heating ◽  
Temperature Uniformity ◽  
Nonuniform Illumination ◽  
Potential Sources ◽  
Wafer Edge

ABSTRACTA complete theory of wafer heating during rapid thermal processing (RTP) is presented. Excellent agreement with experimental results of two commercial RTP systems is obtained. The temperature uniformity is limited by radiation loss at the wafer edge in the stationary state and by nonuniform illumination of the wafer during ramp-up. Structures on wafers are also potential sources for nonuniform heating. Considerable dynamic temperature inhomogeneities during rap-up might limitfu ture applications of RTPe specially when wafer sizes become larger. Possible improvements are suggested regarding adequate process cycling, chip and equipment design.

Optimization of Process Parameter and Temperature Uniformity on Wafers for Rapid Thermal Processing

1995 ◽  
Vol 389 ◽  
Author(s):  
Andreas Tillmann
Keyword(s):  
Standard Deviation ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Oxide Thickness ◽  
Simulation Software ◽  
Process Parameter ◽  
Parameter Distribution ◽  
Temperature Uniformity ◽  
New Strategy ◽  
The Impact

ABSTRACTA new strategy based algorithm to optimize process parameter uniformity (e.g. sheet resistance, oxide thickness) and temperature uniformity on wafers in a commercially available Rapid Thermal Processing (RTP) system with independent lamp control is described. The computational algorithm uses an effective strategy to minimize the standard deviation of the considered parameter distribution. It is based on simulation software which is able to calculate the temperature and resulting parameter distribution on the wafer for a given lamp correction table. A cyclical variation of the correction values of all lamps is done while minimizing the standard deviation of the considered process parameter. After the input of experimentally obtained wafer maps the optimization can be done within a few minutes. This technique is an effective tool for the process engineer to use to quickly optimize the homogeneity of the RTP tool for particular process requirements. The methodology will be shown on the basis of three typical RTP applications (Rapid Thermal Oxidation, Titanium Silicidation and Implant Annealing). The impact of variations of correction values for single lamps on the resulting process uniformity for different applications will be discussed.

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