Evolution of Microstructure During Low-Temperature Solid Phase Epitaxial Growth of SiξGe1-ξ on Si(001)

1994 ◽  
Vol 355 ◽  
Author(s):  
G. Ramanath ◽  
H. Z. Xiao ◽  
S. L. Lai ◽  
Z. Ma ◽  
L. H. Allen
Keyword(s):  
Low Temperature ◽  
Epitaxial Growth ◽  
Solid Phase ◽  
Evolution Of Microstructure

Low-Temperature, Solid-Phase Epitaxial Growth of Amorphized, Non-Stoichiometric GaAs

1995 ◽  
Vol 378 ◽  
Author(s):  
K. B. Belay ◽  
D. L. Llewellyn ◽  
M. C. Ridgway
Keyword(s):  
Low Temperature ◽  
Epitaxial Growth ◽  
Rutherford Backscattering Spectrometry ◽  
Solid Phase ◽  
Present Report ◽  
Time Resolved ◽  
Crystalline Layer ◽  
Transmission Electron ◽  
High Doses ◽  
Insulating Properties

AbstractNon-stoichiometric GaAs layers with semi-insulating properties can be produced by low-temperature molecular beam epitaxy or ion implantation. The latter is the subject of the present report wherein the solid-phase epitaxial growth of amorphized, non-stoichiometric GaAs layers has been investigated with time-resolved reflectivity, Rutherford backscattering spectrometry and transmission electron microscopy. GaAs substrates were implanted with Ga and/or As ions and annealed in air at a temperature of 260°C. The recrystallized material was composed of a thin, crystalline layer bordered by a thick, twinned layer. Non-stoichiometry results in a roughening of the amorphous/crystalline interface and the transformation from planar to non-planar regrowth. The onset of the transformation and the rate thereof can increase with an increase in non-stoichiometry. Non-stoichiometry can be achieved on a macroscopic scale via Ga or As implants or on a microscopic scale via Ga and As implants. The influence of the latter is greatest at low doses whilst the former dominates at high doses.

Solid-Phase Epitaxial Growth of SrTiO3Thin Films on Si(001) Substrates at Low Temperature

2004 ◽  
Vol 43 (11B) ◽  
pp. 7879-7880 ◽  
Author(s):  
Md. Nurul Kabir Bhuiyan ◽  
Hiroaki Kimura ◽  
Toyokazu Tambo ◽  
Chiei Tatsuyama
Keyword(s):  
Low Temperature ◽  
Epitaxial Growth ◽  
Solid Phase

Hetero-epitaxial growth of stoichiometry tunable Si1−xGexfilm via a low temperature aluminium-induced solid phase epitaxy (AI-SPE) process

CrystEngComm ◽  
2015 ◽  
Vol 17 (33) ◽  
pp. 6269-6273 ◽  
Author(s):  
Chuan-Jung Lin ◽  
Sung-Yen Wei ◽  
Chien-Chung Hsu ◽  
Sheng-Min Yu ◽  
Wen-Ching Sun ◽  
...  
Keyword(s):  
Low Temperature ◽  
Epitaxial Growth ◽  
Solid Phase ◽  
Solid Phase Epitaxy

The influence of implanted impurities on the thermally-induced epitaxial recrystallization of CoSi2

1991 ◽  
Vol 6 (5) ◽  
pp. 1035-1039 ◽  
Author(s):  
M.C. Ridgway ◽  
R.G. Elliman ◽  
M. Petravic ◽  
R.P. Thornton ◽  
J.S. Williams
Keyword(s):  
Mass Spectrometry ◽  
Low Temperature ◽  
Epitaxial Growth ◽  
Secondary Ion Mass Spectrometry ◽  
Solid Phase ◽  
Impurity Diffusion ◽  
Time Resolved ◽  
Thermally Induced ◽  
Cation Sites ◽  
Secondary Ion

The influence of implanted impurities (B, O, P, Ar, Xe, Pb, and Bi) on the rate of low-temperature (138 °C), solid-phase epitaxial growth (SPEG) of amorphized CoSi2 has been studied. SPEG rates of impurity-implanted CoSi2, as determined from time-resolved reflectivity measurements, were retarded for all impurities compared to that of Si-implanted CoSi2. The extent of retardation varied from a factor of 1.5 for P to 9.4 for Xe. Channeling measurements of impurity-implanted CoSi2 indicated that Xe and Bi atoms were located on nonsubstitutional lattice sites while ∼40% of Pb atoms occupied either substitutional sites or vacant interstitial cation sites following annealing. The presence of impurities did not affect the CoSi2 post-anneal crystalline quality, and no significant impurity diffusion was apparent at 138 °C from secondary-ion mass spectrometry measurements.

Au‐mediated low‐temperature solid phase epitaxial growth of a SixGe1−xalloy on Si(001)

1996 ◽  
Vol 79 (6) ◽  
pp. 3094-3102 ◽  
Author(s):  
G. Ramanath ◽  
H. Z. Xiao ◽  
S. L. Lai ◽  
L. H. Allen ◽  
T. L. Alford
Keyword(s):  
Low Temperature ◽  
Epitaxial Growth ◽  
Solid Phase

Epitaxial growth of Co3O4 films by low temperature, low pressure chemical vapour deposition

2001 ◽  
Vol 231 (1-2) ◽  
pp. 242-247 ◽  
Author(s):  
K. Shalini ◽  
Anil U. Mane ◽  
S.A. Shivashankar ◽  
M. Rajeswari ◽  
S. Choopun
Keyword(s):  
Low Temperature ◽  
Epitaxial Growth ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Low Pressure ◽  
Pressure Chemical
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