Low-Temperature, Solid-Phase Epitaxial Growth of Amorphized, Non-Stoichiometric GaAs

1995 ◽  
Vol 378 ◽  
Author(s):  
K. B. Belay ◽  
D. L. Llewellyn ◽  
M. C. Ridgway
Keyword(s):  
Low Temperature ◽  
Epitaxial Growth ◽  
Rutherford Backscattering Spectrometry ◽  
Solid Phase ◽  
Present Report ◽  
Time Resolved ◽  
Crystalline Layer ◽  
Transmission Electron ◽  
High Doses ◽  
Insulating Properties

AbstractNon-stoichiometric GaAs layers with semi-insulating properties can be produced by low-temperature molecular beam epitaxy or ion implantation. The latter is the subject of the present report wherein the solid-phase epitaxial growth of amorphized, non-stoichiometric GaAs layers has been investigated with time-resolved reflectivity, Rutherford backscattering spectrometry and transmission electron microscopy. GaAs substrates were implanted with Ga and/or As ions and annealed in air at a temperature of 260°C. The recrystallized material was composed of a thin, crystalline layer bordered by a thick, twinned layer. Non-stoichiometry results in a roughening of the amorphous/crystalline interface and the transformation from planar to non-planar regrowth. The onset of the transformation and the rate thereof can increase with an increase in non-stoichiometry. Non-stoichiometry can be achieved on a macroscopic scale via Ga or As implants or on a microscopic scale via Ga and As implants. The influence of the latter is greatest at low doses whilst the former dominates at high doses.

The influence of implanted impurities on the thermally-induced epitaxial recrystallization of CoSi2

1991 ◽  
Vol 6 (5) ◽  
pp. 1035-1039 ◽  
Author(s):  
M.C. Ridgway ◽  
R.G. Elliman ◽  
M. Petravic ◽  
R.P. Thornton ◽  
J.S. Williams
Keyword(s):  
Mass Spectrometry ◽  
Low Temperature ◽  
Epitaxial Growth ◽  
Secondary Ion Mass Spectrometry ◽  
Solid Phase ◽  
Impurity Diffusion ◽  
Time Resolved ◽  
Thermally Induced ◽  
Cation Sites ◽  
Secondary Ion

The influence of implanted impurities (B, O, P, Ar, Xe, Pb, and Bi) on the rate of low-temperature (138 °C), solid-phase epitaxial growth (SPEG) of amorphized CoSi2 has been studied. SPEG rates of impurity-implanted CoSi2, as determined from time-resolved reflectivity measurements, were retarded for all impurities compared to that of Si-implanted CoSi2. The extent of retardation varied from a factor of 1.5 for P to 9.4 for Xe. Channeling measurements of impurity-implanted CoSi2 indicated that Xe and Bi atoms were located on nonsubstitutional lattice sites while ∼40% of Pb atoms occupied either substitutional sites or vacant interstitial cation sites following annealing. The presence of impurities did not affect the CoSi2 post-anneal crystalline quality, and no significant impurity diffusion was apparent at 138 °C from secondary-ion mass spectrometry measurements.

Solute Segregation and Dynamics of Solid-Phase Crystallization In in and Sb-Implanted Silicon

1981 ◽  
Vol 4 ◽  
Author(s):  
J. Narayan ◽  
G. L. Olson ◽  
O. W. Holland
Keyword(s):  
Laser Power ◽  
Solid Phase ◽  
Solute Segregation ◽  
Dislocation Loops ◽  
Solid Phase Crystallization ◽  
Time Resolved ◽  
Plan View ◽  
Ion Channeling ◽  
Retrograde Solubility ◽  
Transmission Electron

ABSTRACTTime-resolved-reflectivity measurements have been combined with transmission electron microscopy (cross-section and plan-view), Rutherford backscattering and ion channeling techniques to study the details of laser induced solid phase epitaxial growth in In+ and Sb+ implanted silicon in the temperature range from 725 to 1500 °K. The details of microstructures including the formation of polycrystals, precipitates, and dislocations have been correlated with the dynamics of crystallization. There were limits to the dopant concentrations which could be incorporated into substitutional lattice sites; these concentrations exceeded retrograde solubility limits by factors up to 70 in the case of the Si-In system. The coarsening of dislocation loops and the formation of a/2<110>, 90° dislocations in the underlying dislocation-loop bands are described as a function of laser power.

LOW-Temperature Epitaxial Growth of GaAs on Si Substrates by MBE

1992 ◽  
Vol 263 ◽  
Author(s):  
Ting-Yen Chiang ◽  
En-Huery Liu ◽  
Der-Hwa Yiin ◽  
Tri-Rung Yew
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Low Temperature ◽  
Epitaxial Growth ◽  
Defect Density ◽  
Solution Treatment ◽  
Plan View ◽  
Si Substrates ◽  
Gaas On Si ◽  
Transmission Electron

ABSTRACTThis paper presents results of the low—temperature epitaxial growth of GaAs on Si substrates with orientation 1°—4° off (100) by molecular beam epitaxy (MBE). The epitaxial growth ·is carried out on Si wafers subjected to HF solution treatment by “spin-etch” technique before the wafer is transferred to the entry chamber of MBE system. Methods used for reducing defect density in the epitaxial layers are proposed. The characterization techniques include cross-sectional transmission electron microscopy (XTEM), plan-view transmission electron microscopy, scanning electron microscopy (S EM), and double crystal X-ray diffraction (DCXRD). Epitaxial films with a full width at half—maximum (FWHM) of about 310 arcsec measured by DCXRD are obtained without annealing.-

Evolution of Epitaxial SixGei1-x Alloys on Si(100) During Thermal Annealing a-Ge/Au Bilayers Deposited on Si Substrate

1992 ◽  
Vol 280 ◽  
Author(s):  
Z. Ma ◽  
L. H. Allen
Keyword(s):  
Single Crystal ◽  
Thermal Annealing ◽  
Rutherford Backscattering Spectrometry ◽  
Solid Phase ◽  
Growth Dynamics ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
Cross Sectional ◽  
X Ray ◽  
Transmission Electron

ABSTRACTSolid phase epitaxial (SPE) growth of SixGei1-x alloys on Si (100) was achieved by thermal annealing a-Ge/Au bilayers deposited on single crystal Si substrate in the temperature range of 280°C to 310°C. Growth dynamics was investigated using X-ray diffraction, Rutherford backscattering spectrometry, and cross-sectional transmission electron microscopy. Upon annealing, Ge atoms migrate along the grain boundaries of polycrystalline Au and the epitaxial growth initiates at localized triple points between two Au grains and Si substrate, simultaneously incorporating a small amount of Si dissolved in Au. The Au is gradually displaced into the top Ge layer. Individual single crystal SixGei1-x islands then grow laterally as well as vertically. Finally, the islands coalesce to form a uniform layer of epitaxial SixGe1-x alloy on the Si substrate. The amount of Si incorporated in the final epitaxial film was found to be dependent upon the annealing temperature.

scholarly journals Effect of Non-Hydrostatic Stress on Kinetics and Interfacial Roughness During Solid Phase Epitaxial Growth in Si

1996 ◽  
Vol 441 ◽  
Author(s):  
William Barvosa-Carter ◽  
Michael J. Aziz
Keyword(s):  
Growth Rate ◽  
Epitaxial Growth ◽  
Uniaxial Compression ◽  
Solid Phase ◽  
Hydrostatic Stress ◽  
Uniaxial Stress ◽  
Cross Sectional ◽  
Time Resolved ◽  
Crystal Interface

AbstractWe report preliminary in-situ time-resolved measurements of the effect of uniaxial stress on solid phase epitaxial growth in pure Si (001) for the case of stress applied parallel to the amorphous-crystal interface. The growth rate is reduced by the application of uniaxial compression, in agreement with previous results. Additionally, the velocity continues to decrease with time. This is consistent with interfacial roughening during growth under stress, and is supported by both reflectivity measurements and cross-sectional TEM observations. We present a new kinetically-driven interfacial roughening mechanism which is consistent with our observations.

Influence of Hydrogen On The Solid Phase Epitaxial Regrowth of Strained Layer Silicon Germanium Alloys

1995 ◽  
Vol 379 ◽  
Author(s):  
D. Love ◽  
D. Endisch ◽  
T.W. Simpson ◽  
T.D. Lowes ◽  
I.V. Mitchell ◽  
...  
Keyword(s):  
Silicon Germanium ◽  
Rutherford Backscattering Spectrometry ◽  
Solid Phase ◽  
Ion Irradiation ◽  
Amorphous Region ◽  
Elastic Recoil ◽  
Double Crystal ◽  
Time Resolved ◽  
Strained Layer ◽  
Detection Analysis

ABSTRACTStrained layer Si/Si0.79Ge0.21 superlattices consisting of 16 alternating 19.0 nm Si0.79Ge0.21 / 18.5 nm Si layers have been amorphized by Si ion irradiation, then implanted with H ions to nominal atomic concentrations of 1%, 0.1% and 0.05% within the amorphized region. Subsequent solid phase epitaxy (SPE) at a regrowth temperature of 575°C was monitored in situ by time resolved reflectivity (TRR) measurements, while changes in the H distribution were measured by elastic recoil detection analysis (ERDA). Analysis was supplemented by Rutherford backscattering spectrometry (RBS), x-ray double crystal diffraction and reflectivity (DCD/XRF) and transmission electron microscopy (TEM). TRR data reveals a decrease in the initial SPE rate in the Si substrate from 4.9 Å/sec (no H) to 2Å/sec for 1% H concentration as well as a rate decrease as the interface enters the Si/SiGe layers. TRR also indicates an increased roughness in the crystal/amorphous interface with increasing H concentration. ERDA reveals that a significant fraction of the implanted H is stable in the amorphous region for the anneal times (10-30 min) at 575°C, while in the regrown lattice the H concentration has dropped below 20 ppm, near the detection limit of the ERDA. DCD shows almost no strain in the regrown structures. TEM and RBS channeling techniques reveal degradation in the crystal quality of epitaxially regrown structures and a large concentration of strain relieving defects originating near the second deepest of eight SiGe layers in all regrown structures. XRF indicates decreasing sharpness of the regrown Si/SiGe interfaces with increasing H concentration.

Hot-Wire Chemical Vapor Deposition for Epitaxial Silicon Growth On Large-Grained Polycrystalline Silicon Templates

2003 ◽  
Vol 762 ◽  
Author(s):  
M. S. Mason ◽  
C.M. Chen ◽  
H.A. Atwater
Keyword(s):  
Epitaxial Growth ◽  
Polycrystalline Silicon ◽  
Solid Phase ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
Solid Phase Epitaxy ◽  
Epitaxial Silicon ◽  
Hot Wire ◽  
Transmission Electron ◽  
Silicon Growth

AbstractWe investigate low-temperature epitaxial growth of thin silicon films on Si [100] substrates and polycrystalline template layers formed by selective nucleation and solid phase epitaxy (SNSPE). We have grown 300 nm thick epitaxial layers at 300°C on silicon [100] substrates using a high H2:SiH4 ratio of 70:1. Transmission electron microscopy confirms that the films are epitaxial with a periodic array of stacking faults and are highly twinned after approximately 240 nm of growth. Evidence is also presented for epitaxial growth on polycrystalline SNSPE templates under the same growth conditions.

Epitaxial Growth of Near Noble Silicides on (111)Si by Rapid Thermal Annealing

1986 ◽  
Vol 74 ◽  
Author(s):  
H. C. Cheng ◽  
I. C. Wu ◽  
L. J. Chen
Keyword(s):  
Epitaxial Growth ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Solid Phase ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Furnace Annealing ◽  
Transmission Electron ◽  
Vacuum Method ◽  
Comparable Quality

AbstractThe epitaxial growth of near noble silicides, including CoSi2, NiSi2, FeSi2, Pd2 Si, and PtSi on (111)Si, by rapid thermal annealing was studied by transmission electron microscopy. Single-crystalline CoSi2 was formed on (111)Si in the solid phase epitaxy regime by a non-ultra-high vacuum method. The effect on gas ambient was found to be of critical importance on the growth of single-crystal CoSi2 on (111)Si. The best NiSi2, FeSi2, Pd2 Si, and PtSi epitaxy grown on (111)Si by rapid thermal annealing were found to be of comparable quality to those grown by conventional furnace annealing.

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