Dynamic Behavior of Twins In BaTiO3

1994 ◽  
Vol 357 ◽  
Author(s):  
Kalpana S. Katti ◽  
Mehmet Sarikaya
Keyword(s):  
Room Temperature ◽  
Mechanical Stability ◽  
The Other ◽  
Ferroelectric Transition ◽  
Transmission Electron ◽  
In Situ Heating ◽  
Lattice Planes ◽  
Microscopy Techniques ◽  
Dynamic Heating

AbstractThe most prominent lattice defects in barium titanate, i.e., twins on two distinct lattice planes { 111 } and { 110 }, were characterized using dynamic transmission electron microscopy techniques in the image and diffraction modes. In-situ heating experiments from room temperature up to 130°C and then cooling down to -168°C reveal a dependence of { 110 } twins on ferroelectric transition. On the other hand, { 111 } twins are found to be completely stable through the ferroelectric transition and exist in all phases. Streaking is observed in the diffraction spots leading to an estimation of { 1111 twin wall thickness to be about 10Å while no such streaking was observed corresponding to { 1101 twins. Based on these observations and the behavior of the twin boundaries under dynamic heating cycles, an estimate of the twin wall energies indicates that { 111 } walls have three orders of magnitude higher energy than that of { 110 } walls which explains their relative thermal and mechanical stability.

TEM in situ annealing of fluorine-implanted amorphized silicon

1991 ◽  
Vol 49 ◽  
pp. 874-875
Author(s):  
Vidya S. Kaushik ◽  
Robert L. Hance ◽  
Charlotte L. Grove
Keyword(s):  
Electron Microscope ◽  
Room Temperature ◽  
Material Behavior ◽  
In Situ Tem ◽  
Wide Angle ◽  
Sample Holder ◽  
Annealing Behavior ◽  
Transmission Electron ◽  
In Situ Heating

In situ heating experiments in the transmission electron microscope offer unique opportunities to visualize and understand material behavior. The annealing behavior of silicon amorphized by conventional dopant implants as studied by in situ TEM has been reported in the literature. As part of a study on the behavior of fluorine in silicon, we have performed in situ anneals of fluorine-implanted amorphized silicon on XTEM samples, and compared these with bulk furnace-annealed samples.The wafer was an n-type (100) silicon (18-24 ohm-cm) implanted with 1 x 1016 /cm2 fluorine at 60 keV at room temperature through a 13 nm oxide layer. The XTEM samples were heated within the TEM in a Gatan sample holder in a JEOL 2000 FXII STEM operated at 200 kV. The behavior of the sample was observed using a wide angle CCD TV camera and recorded on videotape. Micrographs were recorded before the anneal and after the temperature had stabilized.

Photoluminescence Enhancement of CdS Nanocrystals Fabricated on Dithiocarbamate Functionalized PET Substrates

2012 ◽  
Vol 512-515 ◽  
pp. 1511-1515
Author(s):  
Chun Lin Zhao ◽  
Li Xing ◽  
Xiao Hong Liang ◽  
Jun Hui Xiang ◽  
Fu Shi Zhang ◽  
...  
Keyword(s):  
Room Temperature ◽  
Hexagonal Structure ◽  
Diffraction Measurement ◽  
X Ray Diffraction ◽  
Visible Absorption ◽  
X Ray ◽  
Cds Nanocrystals ◽  
Morphological Studies ◽  
Transmission Electron

Cadmium sulfide (CdS) nanocrystals (NCs) were self-assembled and in-situ immobilized on the dithiocarbamate (DTCs)-functionalized polyethylene glycol terephthalate (PET) substrates between the organic (carbon disulfide diffused in n-hexane) –aqueous (ethylenediamine and Cd2+ dissolved in water) interface at room temperature. Powder X-ray diffraction measurement revealed the hexagonal structure of CdS nanocrystals. Morphological studies performed by scanning electron microscopy (SEM) and high-resolution transmission electron microscope (HRTEM) showed the island-like structure of CdS nanocrystals on PET substrates, as well as energy-dispersive X-ray spectroscopy (EDS) confirmed the stoichiometries of CdS nanocrystals. The optical properties of DTCs modified CdS nanocrystals were thoroughly investigated by ultraviolet-visible absorption spectroscopy (UV-vis) and fluorescence spectroscopy. The as-prepared DTCs present intrinsic hydrophobicity and strong affinity for CdS nanocrystals.

scholarly journals High-Resolution Microstructure Characterization of Additively Manufactured X5CrNiCuNb17-4 Maraging Steel during Ex and in Situ Thermal Treatment

2021 ◽  
Author(s):  
Mihaela Albu ◽  
Bernd Panzirsch ◽  
Hartmuth Schröttner ◽  
Stefan Mitsche ◽  
Klaus Reichmann ◽  
...  
Keyword(s):  
Maraging Steel ◽  
Elevated Temperatures ◽  
Scanning Transmission Electron Microscope ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
The Matrix ◽  
Powder Particles ◽  
In Situ Heating ◽  
Heating Up

Powder and SLM additively manufactured parts of X5CrNiCuNb17-4 maraging steel were systematically investigated by electron microscopy to understand the relationship between the properties of the powder grains and the microstructure of the printed parts. We prove that satellites, irregularities and superficial oxidation of powder particles can be transformed into an advantage through the formation of nanoscale (AlMnSiTiCr)-oxides in the matrix during the printing process. The nano-oxides showed extensive stability in terms of size, spherical morphology, chemical composition and crystallographic disorder upon in situ heating up to 950°C in the scanning transmission electron microscope. Their presence thus indicates a potential for oxide-dispersive strengthening of this steel, which may be beneficial for creep resistance at elevated temperatures. The nucleation of copper clusters and their evolution into nanoparticles as well as the precipitation of Ni and Cr particles upon in situ heating have as well been systematically documented.

In situ transmission electron microscope measurements of solid Al-solid Pb and solid Al-liquid Pb surface-energy anisotropy in rapidly solidified Al-5% Pb (by mass)

1987 ◽  
Vol 414 (1847) ◽  
pp. 499-507 ◽  
Keyword(s):  
Electron Microscope ◽  
Melting Point ◽  
Surface Energy ◽  
Transmission Electron Microscope ◽  
Room Temperature ◽  
Transmission Electron ◽  
Increasing Temperature ◽  
Rapidly Solidified ◽  
Al Matrix

Alloys of Al-5% Pb and Al-5% Pb-0.5% Si (by mass) have been manufactured by rapid solidification and then examined by transmission electron microscopy. The rapidly solidified alloy microstructures consist of 5-60 nm Pb particles embedded in an Al matrix. The Pb particles have a cube-cube orientation relation with the Al matrix, and are cub-octahedral in shape, bounded by {100} Al, Pb and {111} Al, Pb facets. The equilibrium Pb particle shape and therefore the anisotropy of solid Al-solid Pb and solid Al-liquid Pb surface energies have been monitored by in situ heating in the transmission electron microscope over the temperature range between room temperature and 550°C. The ani­sotropy of solid Al-solid Pb surface energy is constant between room temperature and the Pb melting point, with a {100} Al, Pb surface energy about 14% greater than the {111} Al, Pb surface energy, in good agreement with geometric near-neighbour bond energy calculations. The {100} AI, Pb facet disappears when the Pb particles melt, and the anisotropy of solid Al-liquid Pb surface energy decreases gradually with increasing temperature above the Pb melting point, until the Pb particles become spherical at about 550°C.

scholarly journals In situ environmental HRTEM discloses low temperature carbon soot oxidation by ceria–zirconia at the nanoscale

2019 ◽  
Vol 55 (27) ◽  
pp. 3876-3878 ◽  
Author(s):  
Eleonora Aneggi ◽  
Jordi Llorca ◽  
Alessandro Trovarelli ◽  
Mimoun Aouine ◽  
Philippe Vernoux
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Low Temperature ◽  
Room Temperature ◽  
Soot Oxidation ◽  
Environmental Transmission ◽  
Transmission Electron ◽  
Carbon Soot ◽  
Environmental Transmission Electron Microscopy

In situ environmental transmission electron microscopy discloses room temperature carbon soot oxidation by ceria–zirconia at the nanoscale.

In-Situ Transmission Electron Microscopy Investigation of Aluminum Induced Crystallization of Amorphous Silicon

2008 ◽  
Vol 1066 ◽  
Author(s):  
Ram Kishore ◽  
Renu Sharma ◽  
Satoshi Hata ◽  
Noriyuki Kuwano ◽  
Yoshitsuga Tomokiyo ◽  
...  
Keyword(s):  
Electron Diffraction ◽  
Amorphous Silicon ◽  
Diffraction Pattern ◽  
Electron Diffraction Pattern ◽  
Polycrystalline Silicon ◽  
Nanocrystalline Silicon ◽  
Transmission Electron ◽  
In Situ Heating ◽  
Induced Crystallization

ABSTRACTThe interaction of amorphous silicon and aluminum films to achieve polycrystalline silicon has been investigated using transmission electron microscope equipped with in-situ heating holder. Carbon coated nickel grids were used for TEM studies. An ultra high vacuum cluster tool was used for the deposition of a ∼50nm a-Si films and a vacuum deposition system was used to deposit a ∼50nm Al films on a-Si film. The microstructural features and electron diffraction in the plain view mode were observed with increase in temperature starting from room temperature to 275 °C. The specimen was loaded inside TEM heating holder. The temperature was measured and kept constant for 5 minutes during which the microstructure at fixed magnification of X63K was recorded and the electron diffraction pattern of the same area was also recorded. The temperature was then increase and fixed at desired value and microstructure and EDP were again recorded. The temperatures used in this experiment were 30, 100, 150, 200, 225, 275°C. A sequential change in microstructural features and electron diffraction pattern due to interfacial diffusion of boundary between Al and amorphous Si was investigated. Evolution of polycrystalline silicon with randomly oriented grains as a result of a-Si and Al interaction was revealed. After the in-situ heating experiment the specimen was subjected to high resolution TEM and EDS investigations after removing the excess Al. The EDS analysis of the crystallized specimen was performed to locate the Al distribution in the crystallized silicon. These studies show that the Al induced crystallization process can be used to prepare polycrystalline as well as nanocrystalline silicon by controlling the in-situ annealing parameters. The investigations are very useful as the nanocrystalline silicon is being investigated for its use in developing high efficiency silicon solar structures.

In-Situ Tem Investigation During Thermal Cycling of thin Copper Films

1996 ◽  
Vol 436 ◽  
Author(s):  
R.-M. Keller ◽  
W. Sigle ◽  
S. P. Baker ◽  
O. Kraft ◽  
E. Arzt
Keyword(s):  
Grain Growth ◽  
Room Temperature ◽  
Dislocation Motion ◽  
In Situ Tem ◽  
Copper Films ◽  
Stress Evolution ◽  
Cu Films ◽  
Transmission Electron ◽  
Insight Into

AbstractIn-situ transmission electron microscopy (TEM) was performed to study grain growth and dislocation motion during temperature cycles of Cu films with and without a cap layer. In addition, the substrate curvature method was employed to determine the corresponding stresstemperature curves from room temperature up to 600°C. The results of the in-situ TEM investigations provide insight into the microstructural evolution which occurs during the stress measurements. Grain growth occurred continuously throughout the first heating cycle in both cases. The evolution of dislocation structure observed in TEM supports an explanation of the stress evolution in both capped and uncapped films in terms of dislocation effects.

scholarly journals In Situ TEM Observations of Heavy Ion Damage in Gallium Arsenide

1988 ◽  
Vol 100 ◽  
Author(s):  
M. W. Bench ◽  
I. M. Robertson ◽  
M. A. Kirk
Keyword(s):  
Low Temperature ◽  
Room Temperature ◽  
National Laboratory ◽  
Argonne National Laboratory ◽  
Heavy Ion ◽  
In Situ Tem ◽  
Accelerator Facility ◽  
Transmission Electron ◽  
Ion Accelerator

ABSTRACTTransmission electron microscopy experiments have been performed to investigate the lattice damage created by heavy-ion bombardments in GaAs. These experiments have been performed in situ by using the HVEN - Ion Accelerator Facility at Argonne National Laboratory. The ion bcorbardments (50 keV Ar+ and Kr+) and the microscopy have been carried out at temperatures rangrin from 30 to 300 K. Ion fluences ranged from 2 × 1011 to 5 × 1013 ions cm−2.Direct-inpact amorphization is observed to occur in both n-type and semi-insulating GaAs irradiated to low ion doses at 30 K and room temperature. The probability of forming a visible defect is higher for low temperature irradiations than for room temperature irradiations. The amorphous zones formed at low temperature are stable to temperatures above 250 K. Post implantation annealing is seen to occur at room temperature for all samples irradiated to low doses until eventually all visible damage disappears.

Coalescence between Au nanoparticles as induced by nanocurvature effect and electron beam athermal activation effect

Nanoscale ◽  
2018 ◽  
Vol 10 (17) ◽  
pp. 7978-7983 ◽  
Author(s):  
Liang Cheng ◽  
Xianfang Zhu ◽  
Jiangbin Su
Keyword(s):  
Electron Beam ◽  
Electron Microscope ◽  
Transmission Electron Microscope ◽  
Room Temperature ◽  
Electron Beam Irradiation ◽  
Au Nanoparticles ◽  
Beam Irradiation ◽  
Activation Effect ◽  
Transmission Electron

The coalescence of two single-crystalline Au nanoparticles on surface of amorphous SiOxnanowire, as induced by electron beam irradiation, wasin situstudied at room temperature in a transmission electron microscope.

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