Direct Correlation of Transport Properties and Microstructure In Y1Ba2Cu3O7-x Thin Film Grain Boundaries

1994 ◽  
Vol 357 ◽  
Author(s):  
B. V. Vuchic ◽  
K. L. Merkle ◽  
D. B. Buchholz ◽  
R. P. H. Chang ◽  
L. D. Marks
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Grain Boundaries ◽  
High Resolution Electron Microscopy ◽  
Transmission Electron ◽  
Resolution Electron ◽  
Current Voltage ◽  
Electron Microscopy Analysis ◽  
Microscopy Analysis ◽  
The Individual

AbstractIndividual 45° [001] tilt grain boundaries in Y1Ba2Cu3O7-x thin films grown on biepitaxial substrates were studied. The thin films were grown using both pulsed organometallic beam epitaxy (POMBE) and laser ablation. Transport characteristics of the individual grain boundaries were measured including resistance - temperature (R-T) and current - voltage (I-V) dependencies with and without an applied magnetic field. In order to elucidate possible structural origins of the differences in transport behavior, the same grain boundaries which were electrically characterized were subsequently thinned for electron-microscopy analysis. Transmission-electron-microscopy and high-resolution-electron-microscopy were used to structurally characterize the grain boundaries. The macroscopic and microscopic structures of two boundaries, a nominally resistive and a superconducting grain boundary, are compared.

High-resolution electron-microscopy analysis of splitting patterns in Ni alloys

2005 ◽  
Vol 85 (2) ◽  
pp. 51-59 ◽  
Author(s):  
H. A. Calderon * ◽  
G. Kostorz ◽  
L. Calzado-Lopez ◽  
C. Kisielowski ◽  
T. Mori
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
High Resolution Electron Microscopy ◽  
Ni Alloys ◽  
Resolution Electron ◽  
Electron Microscopy Analysis ◽  
Microscopy Analysis

Grain Boundary Transformations in Bi-Doped Copper

1991 ◽  
Vol 238 ◽  
Author(s):  
Elsie C. Urdaneta ◽  
David E. Luzzi ◽  
Charles J. McMahon
Keyword(s):  
Electron Microscopy ◽  
Heat Treatment ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Grain Boundary ◽  
Grain Boundaries ◽  
Treatment Time ◽  
High Resolution Electron Microscopy ◽  
Transmission Electron ◽  
Resolution Electron

ABSTRACTBismuth-induced grain boundary faceting in Cu-12 at ppm Bi polycrystals was studied using transmission electron microscopy (TEM). The population of faceted grain boundaries in samples aged at 600°C was observed to increase with heat treatment time from 15min to 24h; aging for 72h resulted in de-faceting, presumably due to loss of Bi from the specimen. The majority of completely faceted boundaries were found between grains with misorientation Σ=3. About 65% of the facets of these boundaries were found to lie parallel to crystal plane pairs of the type {111}1/{111]2- The significance of these findings in light of recent high resolution electron microscopy experiments is discussed.

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