In-Situ Observation of Chemical Vapor Deposition of Thin Sige Films by Optical Reflection Interferometry

1994 ◽  
Vol 375 ◽  
Author(s):  
G. Ritter ◽  
B. Tillack ◽  
M. Weidner ◽  
F. G. Böbel ◽  
B. Hertel
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Ex Situ ◽  
In Situ Observation ◽  
Optical Reflection ◽  
Initial Stage

AbstractChemical Vapor Deposition of Si1-x Gex – films on Si (100) and of polycrystalline Si1-x Gex, layers on SiO2 – coated substrates have been performed at a pressure of 200 Pa in the temperature range of 500°C – 800°C, correspondingly. To observe the growth process and to characterize the growing thin films at deposition conditions an optical reflection interferometer (PYRITIERS) has been used. Comparing the data obtained at growth temperature with ex- situ measurements by spectroscopic ellipsometry the temperature dependence of optical constants of SiGe films have been evaluated. The reflectivity measurements during the deposition process allow to study the quality of the heteroepitaxial film, even in the initial stage of epitaxial growth.

In Situ Ellipsometry Study of the Diamond Film Evolution Process

1999 ◽  
Vol 580 ◽  
Author(s):  
L.M. Cancel ◽  
O.L. Figueroa ◽  
B.R. Weiner ◽  
G. Morell
Keyword(s):  
Chemical Vapor Deposition ◽  
Diamond Film ◽  
Vapor Deposition ◽  
Film Growth ◽  
Growth Parameters ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Ex Situ ◽  
Film Microstructure

AbstractWe employed in situ ellipsometry to monitor and study the nucleation and growth processes of diamond thin films fabricated by chemical vapor deposition. The films were grown on Si substrates in a hot filament chemical vapor deposition (HFCVD) system. We monitored the effective extinction coefficient (k) at 1.96 eV of the diamond films during growth through ellipsometry. The behavior of this parameter was found to be reproducible, making it suitable as a basis for dividing the deposition process into intervals. The film growth was aborted at various k values yielding diamond film samples that represent snapshots of the growth process at different stages. These films were removed for ex situ characterization using Raman spectroscopy and scanning electron microscopy (SEM). These characterizations were used to correlate the ellipsometric data with film microstructure, enabling us from now on to monitor the diamond film growth in real time and to design experiments targeted at modifying the film microstructure by changing growth parameters in the middle of film fabrication.

The growth modes of graphene in the initial stage of a chemical vapor-deposition process

RSC Advances ◽  
2016 ◽  
Vol 6 (94) ◽  
pp. 91157-91162 ◽  
Author(s):  
Zhaoming Fu ◽  
Yipeng An
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Chemical Vapor Deposition Process ◽  
Graphene Growth ◽  
Carbon Chains ◽  
Growth Modes ◽  
Initial Stage ◽  
Vapor Deposition Process

The different growth modes of carbon chains and carbon islands in the initial stage of graphene growth.

Low Temperature Silicon Epitaxial Growth by Plasma Enhanced Chemical Vapor Deposition From SiH4/He/H2

1991 ◽  
Vol 235 ◽  
Author(s):  
Yung-Jen Lin ◽  
Ming-Deng Shieh ◽  
Chiapying Lee ◽  
Tri-Rung Yew
Keyword(s):  
Electron Microscopy ◽  
Chemical Vapor Deposition ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Ex Situ ◽  
Epitaxial Layers ◽  
Cross Sectional ◽  
Transmission Electron

ABSTRACTSilicon epitaxial growth on silicon wafers were investigated by using plasma enhanced chemical vapor deposition from SiH4/He/H2. The epitaxial layers were growm at temperatures of 350°C or lower. The base pressure of the chamber was greater than 2 × 10−5 Torr. Prior to epitaxial growth, the wafer was in-situ cleaned by H2 baking for 30 min. The epi/substrate interface and epitaxial layers were observed by cross-sectional transmission electron microscopy (XTEM). Finally, the influence of the ex-situ and in-situ cleaning processes on the qualities of the interface and epitaxial layers was discussed in detail.

In-situ observation of chemical vapor deposition using SiHCl3 and BCl3 gases

2015 ◽  
Vol 12 (7) ◽  
pp. 953-957 ◽  
Author(s):  
Ayumi Saito ◽  
Kento Miyazaki ◽  
Misako Matsui ◽  
Hitoshi Habuka
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
In Situ Observation

Low Temperature Silicon Epitaxial Growth by Plasma Enhanced Chemical Vapor Deposition from SiH4/He/H2

1991 ◽  
Vol 236 ◽  
Author(s):  
Yung-Jen Lin ◽  
Ming-Deng Shieh ◽  
Chiapying Lee ◽  
Tri-Rung Yew
Keyword(s):  
Electron Microscopy ◽  
Chemical Vapor Deposition ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Ex Situ ◽  
Epitaxial Layers ◽  
Cross Sectional ◽  
Transmission Electron

AbstractSilicon epitaxial growth on silicon wafers were investigated by using plasma enhanced chemical vapor deposition from SiH4/He/H2. The epitaxial layers were growm at temperatures of 350°C or lower. The base pressure of the chamber was greater than 2 × 10−5 Torr. Prior to epitaxial growth, the wafer was in-situ cleaned by H2 baking for 30 min. The epi/substrate interface and epitaxial layers were observed by cross-sectional transmission electron microscopy (XTEM). Finally, the influence of the ex-situ and in-situ cleaning processes on the qualities of the interface and epitaxial layers was discussed in detail.

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