Studies of Defects in ZnO by Positron Annihilation

1995 ◽  
Vol 378 ◽  
Author(s):  
Werner Puff ◽  
Sebastian Brunner ◽  
Peter Mascher ◽  
Adam G. Balogh

AbstractIn order to investigate the basic properties of radiation-induced defects in ZnO crystals, positron annihilation lifetime and Doppler-broadening measurements were performed on crystals sinterd for 18 hours at 1200 °C and irradiated with 3 MeV protons at 223 K. The irradiation induced a colour change of the specimens from the original yellowish-white to dark orange or even brown. Isochronal annealing experiments showed three annealing stages, centred at about 150 °C, 500 – 550 °C, and 750 °C, respectively. These stages are related to the annealing of variously sized vacancy complexes.

1998 ◽  
Vol 540 ◽  
Author(s):  
S. Brunner ◽  
W. Puff ◽  
P. Mascher ◽  
A.G. Balogh

AbstractIn this study we discuss the microstructural changes after electron and proton irradiation and the thermal evolution of the radiation induced defects during isochronal annealing. The nominally undoped samples were irradiated either with 3 MeV protons to a fluence of 1.2× 1018 p/cm2 or with 1 MeV electrons to a fluence of 1×1018 e/cm2. The investigation was performed with positron lifetime and Doppler-broadening measurements. The measurements were done at room temperature and in some cases down to 10 K to investigate the thermal dependence of the trapping characteristics of the positrons.


2012 ◽  
Vol 733 ◽  
pp. 270-273 ◽  
Author(s):  
Veronika Sabelová ◽  
Martin Petriska ◽  
Jana Veterníková ◽  
Vladimir Slugeň ◽  
Jarmila Degmová ◽  
...  

Positron annihilation Doppler broadening spectroscopy (DBS) has been used for the detection of structural defects in Fe-9wt%Cr (Fe-9Cr) alloy in the as-prepared and implanted states. Defects were created by He and H ion implantation with a kinetic energy of 250 keV. DBS is a non-destructive method and is a unique tool for the observation of open volume defects like vacancies and vacancy clusters in solids. A positron beam with variable positron energy was used for the measurement of defect depth profiles up to 1.5 µm. The obtained results provide qualitative and semi-quantitative information about radiation induced defects and their chemical environment. Although the collision damage from helium implantation was one order of magnitude higher than for the case of hydrogen, the changes in S and W parameters are much less significant, probably due to considerably lower mobility of helium in the implanted materials, which results in helium capture by the created open volume defects.


1996 ◽  
Vol 439 ◽  
Author(s):  
S. Brunner ◽  
W. Puff ◽  
P. Mascher ◽  
A. G. Balogh ◽  
H. Baumann

AbstractIn this contribution, we present a study aimed at investigating the basic properties of radiation induced defects in ZnS and ZnO and the influence of the atmosphere on the annealing characteristics of the defects. Positron annihilation experiments (both lifetime and Dopplerbroadening measurements) were performed on both single- and polycrystalline samples, irradiated with 3 MeV protons or 1 MeV electrons. For ZnS it was found that both electron and proton irradiation caused significant changes in the positron annihilation characteristics. The annealing of proton irradiated ZnS in air leads to significant oxidation and eventual transformation into ZnO.


1996 ◽  
Vol 438 ◽  
Author(s):  
S. Brunner ◽  
W. Puff ◽  
P. Mascher ◽  
A. G. Balogh ◽  
H. Baumann

AbstractIn this contribution, we present a study aimed at investigating the basic properties of radiation induced defects in ZnS and ZnO and the influence of the atmosphere on the annealing characteristics of the defects. Positron annihilation experiments (both lifetime and Dopplerbroadening measurements) were performed on both single- and polycrystalline samples, irradiated with 3 MeV protons or 1 MeV electrons. For ZnS it was found that both electron and proton irradiation caused significant changes in the positron annihilation characteristics. The annealing of proton irradiated ZnS in air leads to significant oxidation and eventual transformation into ZnO.


1998 ◽  
Vol 510 ◽  
Author(s):  
S. Brunner ◽  
W. Puff ◽  
P. Mascher ◽  
A.G. Balogh

AbstractIn this contribution we present a study aimed at comparing results of positron-lifetime and Doppler-broadening measurements on the wide-band-gap compound semiconductors ZnS, ZnSe, and ZnTe. To investigate the basic properties of intrinsic and radiation induced defects the samples were irradiated either with 3 MeV protons or 1 MeV electrons. The isochronal annealing was performed in an Ar atmosphere. It was found that electron and proton irradiation cause different changes in the positron annihilation characteristics. Several annealing stages were observed, related to the annealing of variously sized vacancy complexes.


2020 ◽  
Vol 171 ◽  
pp. 108712
Author(s):  
J.D. Liu ◽  
J.Q. Guo ◽  
M. Luo ◽  
Z. Wang ◽  
H.J. Zhang ◽  
...  

2012 ◽  
Vol 331 ◽  
pp. 41-52 ◽  
Author(s):  
Andreas Wagner ◽  
Wolfgang Anwand ◽  
Maik Butterling ◽  
Thomas E. Cowan ◽  
Fine Fiedler ◽  
...  

A new type of a positron annihilation lifetime spectroscopy (PALS) system has been set up at the superconducting electron accelerator ELBE [ at Helmholtz-Zentrum Dresden-Rossendorf. In contrast to existing source-based PALS systems, the approach described here makes use of an intense photon beam from electron bremsstrahlung which converts through pair production into positrons inside the sample under study. The article focusses on the production of intense bremsstrahlung using a superconducting electron linear accelerator, the production of positrons inside the sample under study, the efficient detector setup which allows for annihilation lifetime and Doppler-broadening spectroscopy simultaneously. Selected examples of positron annihilation spectroscopy are presented.


2005 ◽  
Vol 313 (1-3) ◽  
pp. 63-69 ◽  
Author(s):  
R.S. Yu ◽  
T. Suzuki ◽  
N. Djourelov ◽  
K. Kondo ◽  
Yasuo Ito ◽  
...  

2019 ◽  
Vol 517 ◽  
pp. 148-151 ◽  
Author(s):  
O.V. Ogorodnikova ◽  
L. Yu Dubov ◽  
S.V. Stepanov ◽  
D. Terentyev ◽  
Yu.V. Funtikov ◽  
...  

2015 ◽  
Vol 230 ◽  
pp. 221-227 ◽  
Author(s):  
Halyna Klym ◽  
A. Ingram ◽  
O. Shpotyuk ◽  
R. Szatanik ◽  
E. Petracovschi ◽  
...  

Positron annihilation lifetime spectroscopy combined with Doppler broadening of annihilation radiation was applied to study free-volume entities in GeS2-Ga2S3glasses affected by Ga additions. It is shown that Ga-related void sub-system plays a decisive role in positron trapping process, while the overall density variation is defined mainly by Ge-related sub-system. These results serve as basis for new characterization route for inner free-volume structure of these glasses.


Sign in / Sign up

Export Citation Format

Share Document