Deposition of Diamond-Like Carbon Films by PECVD

1995 ◽  
Vol 383 ◽  
Author(s):  
Kyu Chang Park ◽  
Soo Chul Chun ◽  
Kyo Jun Song ◽  
Min Park ◽  
Myung Hwan Oh ◽  
...  
Keyword(s):  
Flow Rate ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Reaction Chamber ◽  
Carbon Films ◽  
Film Structure ◽  
Hard Carbon ◽  
Peak Intensity ◽  
Self Bias ◽  
Raman Peak Intensity

ABSTRACTWe have studied the structural properties of hydrogenated carbon films deposited by plasma enhanced chemical vapor deposition (PECVD). The substrate holder in reaction chamber could be biased and be heated. The Raman peak intensity at 1350 cm−1 was increased by reducing CH4 flow rate. The film structure changed from soft a-C:H to hard carbon with decreasing CH4 flow rate, resulted from increased self-bias. The 1520 cm−1 peak shifts to higher frequency by reducing the CH4flow rate, probably resulted from the increased internal stress.

Substrate Effect on the Diamond-Like Carbon Films Synthesized by RF Plasma Enhanced Chemical Vapor Deposition

2007 ◽  
Vol 539-543 ◽  
pp. 3574-3579 ◽  
Author(s):  
S.S. Tzeng ◽  
Wei Min Wu ◽  
J.S. Hsu
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Carbon Films ◽  
The Self ◽  
Rf Plasma ◽  
Diamond Like Carbon ◽  
Working Pressure ◽  
Glass Substrates ◽  
Self Bias

Diamond-like carbon (DLC) films were synthesized by RF plasma enhanced chemical vapor deposition using methane as carbon source. Effect of substrate on the growth of DLC films was investigated by using four different substrate materials, silicon wafer (100), glass, flat-polished and mirror-polished alumina. The carbon films were deposited at four different self-bias voltages (-157 V, -403 V, -500 V and -590 V) by changing the plasma power under fixed flow rate and working pressure. Raman analyses indicated that DLC films were deposited on silicon and glass substrates at the self-bias -403 V ~ -590 V, and polymer-like carbon films were obtained at -157 V. For the alumina substrates, different Raman results were observed for flat-polished and mirror-polished alumina substrates. The hardness of DLC films, deposited on silicon and glass substrates at the self-bias -403 V ~ -590 V, was within 16~20 GPa using nanoindentation technique.

Diamond nucleation on unscratched silicon substrates coated with various non-diamond carbon films by microwave plasma-enhanced chemical vapor deposition

1995 ◽  
Vol 10 (1) ◽  
pp. 165-174 ◽  
Author(s):  
Z. Feng ◽  
M.A. Brewer ◽  
K. Komvopoulos ◽  
I.G. Brown ◽  
D.B. Bogy
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Hydrogen Plasma ◽  
Chemical Vapor ◽  
Carbon Films ◽  
Nucleation Density ◽  
Silicon Substrates ◽  
Hard Carbon ◽  
Diamond Nucleation

The efficacy of various non-diamond carbon films as precursors for diamond nucleation on unscratched silicon substrates was investigated with a conventional microwave plasma-enhanced chemical vapor deposition system. Silicon substrates were partially coated with various carbonaceous substances such as clusters consisting of a mixture of C60 and C70, evaporated films of carbon and pure C70, and hard carbon produced by a vacuum are deposition technique. For comparison, diamond nucleation on silicon substrates coated with submicrometer-sized diamond particles and uncoated smooth silicon surfaces was also examined under similar conditions. Except for evaporated carbon films, significantly higher diamond nucleation densities were obtained by subjecting the carbon-coated substrates to a low-temperature high-methane concentration hydrogen plasma treatment prior to diamond nucleation. The highest nucleation density (∼3 × 108 cm−2) was obtained with hard carbon films. Scanning electron microscopy and Raman spectroscopy demonstrated that the diamond nucleation density increased with the film thickness and etching resistance. The higher diamond nucleation density obtained with the vacuum are-deposited carbon films may be attributed to the inherent high etching resistance, presumably resulting from the high content of sp3 atomic bonds. Microscopy observations suggested that diamond nucleation in the presence of non-diamond carbon deposits resulted from carbon layers generated under the pretreatment conditions.

Low-temperature plasma-enhanced chemical vapor deposition of hard carbon films

Vacuum ◽  
2004 ◽  
Vol 73 (1) ◽  
pp. 131-135 ◽  
Author(s):  
A.Ya. Vinogradov ◽  
A.S. Abramov ◽  
K.E. Orlov ◽  
A.S. Smirnov
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Carbon Films ◽  
Low Temperature Plasma ◽  
Hard Carbon ◽  
Temperature Plasma

Using Molecular-Beam Mass Spectrometry to Study the Pecvd of Diamondlike Carbon Films

1993 ◽  
Vol 334 ◽  
Author(s):  
I.B. Graff ◽  
R.A. Pugliese ◽  
P.R. Westmoreland
Keyword(s):  
Mass Spectrometry ◽  
Vapor Deposition ◽  
Molecular Beam ◽  
Film Growth ◽  
Chemical Vapor ◽  
Carbon Films ◽  
Total Flow ◽  
Measured Concentration ◽  
Molecular Beam Mass Spectrometry ◽  
Diamondlike Carbon

AbstractMolecular-beam mass spectrometry has been used to study plasma-enhanced chemical vapor deposition (PECVD) of diamondlike carbon films. A threshold-ionization technique was used to identify and quantify species in the plasma. Mole fractions of H, H2, CH4, C2H2, C2H6 and Ar were measured in an 83.3% CH4/Ar mixture at a pressure of 0.1 torr and a total flow of 30 sccm. Comparisons were made between mole fractions measured at plasma powers of 25W and 50W. These results were compared to measured concentration profiles and to film growth rates.

Surface studies of diamond-like carbon films grown by plasma-enhanced chemical vapor deposition

2010 ◽  
Vol 42 (12-13) ◽  
pp. 1702-1705 ◽  
Author(s):  
R. Maheswaran ◽  
R. Sivaraman ◽  
O. Mahapatra ◽  
P. C. Rao ◽  
C. Gopalakrishnan ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Carbon Films ◽  
Diamond Like Carbon ◽  
Surface Studies
Sign in / Sign up

Export Citation Format

Share Document