Investigation of Lateral and Vertical Profiles Enhanced by Implantation

1995 ◽  
Vol 396 ◽  
Author(s):  
A. Mineji ◽  
K. Hamada ◽  
S. Saito
Keyword(s):  
Point Defects ◽  
Diffusion Control ◽  
High Dose ◽  
Vertical Profiles ◽  
Junction Depth ◽  
Shallow Junction ◽  
Enhanced Diffusion ◽  
Junction Formation ◽  
D Region ◽  
High Dose Implantation

AbstractIn shallow junction formation with junction depth below 0.1μm, enhanced diffusion control is essential. The purpose of this paper is to investigate the B enhanced diffusion by point defects, introduced by high dose implantation with amorphization. Ge ions were implanted to induce amorphization within the S/D region of pMOS. These results were compared with that of the B enhanced diffusion by point defects, induced by Si+ implant with non-amorphization. These results suggest that the B enhanced diffusion in lateral profiles is much smaller, compared with that in vertical profiles, when point defects were introduced by amorphization.

Ultra Shallow Junction Formation by B+/BF2+ Implantation at Energy of 0.5 KEV

1998 ◽  
Vol 532 ◽  
Author(s):  
M. Kase ◽  
Y Kikuchi ◽  
H. Niwa ◽  
T. Kimura
Keyword(s):  
Junction Depth ◽  
Shallow Junction ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion ◽  
Junction Formation

ABSTRACTThis paper describes ultra shallow junction formation using 0.5 keV B+/BF2+ implantation, which has the advantage of a reduced channeling tail and no transient enhanced diffusion. In the case of l × 1014 cm−2, 0.5 keV BF2 implantation a junction depth of 19 nm is achieved after RTA at 950°C.

Production of GexSi1−x, and SiC Films on Si Substrates Using Particle-Beam Technologies

1992 ◽  
Vol 281 ◽  
Author(s):  
V. A. Kagadey ◽  
O. B. Ladizhensky ◽  
N. I. Lebedeva ◽  
E. N. Matin ◽  
D. I. Proskurovsky ◽  
...  
Keyword(s):  
Electron Beam ◽  
Point Defects ◽  
Particle Beam ◽  
High Dose ◽  
Si Substrate ◽  
Enhanced Diffusion ◽  
Si Substrates ◽  
Prolonged Annealing ◽  
Sic Films ◽  
High Dose Implantation

ABSTRACTThe paper presents the results of preliminary experiments on the production of GexSi1−x/Si structures using deposition of a thin Ge film on a Si substrate, implantation of Si ions and rapid electron-beam annealing. The conditions under which monocrystalline layers form have been found. It is supposed that the large depth of Ge penetration into Si is due to enhanced diffusion of Ge conditioned by the high density of point defects in the doped Si. It has been established that high-dose implantation of C ions into Si and subsequent electron beam annealing result in the formation of a monocrystalline layer of the SiC phase in the case of pulsed (∼0.7 μs) heating and liquid-phase recrystallisation and a polycrystalline SiC layer in the case of prolonged annealing.

Effect of Energy and Dose on Transient-Enhanced Diffusion and Defect Microstructure in Low Energy High Dose As+ Implanted Si

1996 ◽  
Vol 438 ◽  
Author(s):  
V. Krishnamoorthy ◽  
D. Venables ◽  
K. Moeller ◽  
K. S. Jones ◽  
B. Freer
Keyword(s):  
Point Defects ◽  
Surface Recombination ◽  
High Dose ◽  
Enhanced Diffusion ◽  
Projected Range ◽  
Diffusion Enhancement ◽  
Defect Microstructures ◽  
Dose Dependent ◽  
Higher Doses ◽  
Defect Microstructure

Abstract(001) CZ silicon wafers were implanted with arsenic (As+) at energies of 10–50keV to doses of 2×1014 to 5×1015/cm2. All implants were amorphizing in nature. The samples were annealed at 700°C for 16hrs. The resultant defect microstructures were analyzed by XTEM and PTEM and the As profiles were analyzed by SIMS. The As profiles showed significantly enhanced diffusion in all of the annealed specimens. The diffusion enhancement was both energy and dose dependent. The lowest dose implant/annealed samples did not show As clustering which translated to a lack of defects at the projected range. At higher doses, however, projected range defects were clearly observed, presumably due to interstitials generated during As clustering. The extent of enhancement in diffusion and its relation to the defect microstructure is explained by a combination of factors including surface recombination of point defects, As precipitation, As clustering and end of range damage.

Simulation of Transient Enhanced Diffusion in Silicon Taking into Account Ostwald Ripening of Defects

2002 ◽  
Vol 717 ◽  
Author(s):  
Masashi Uematsu
Keyword(s):  
Time Dependence ◽  
Diffusion Model ◽  
Low Dose ◽  
Ostwald Ripening ◽  
High Dose ◽  
Enhanced Diffusion ◽  
Annealing Conditions ◽  
Transient Enhanced Diffusion ◽  
High Dose Implantation ◽  
Medium Dose

AbstractThe transient enhanced diffusion (TED) of high-dose implanted P is simulated taking into account Ostwald ripening of end-of-range (EOR) defects. First, we integrated a basic diffusion model based on the simulation of in-diffusion, where no implanted damages are involved. Second, from low-dose implantation, we developed a model for TED due to {311} self-interstitial (I) clusters involving Ostwald ripening and the dissolution of {311} clusters. Third, from medium-dose implantation, we showed that P-I clusters should be taken into account, and during the diffusion, the clusters are dissolved to emit self-interstitials that also contribute to TED. Finally, from high-dose implantation, EOR defects are modeled and we derived a formula to describe the time-dependence for Ostwald ripening of EOR defects, which is more significant at higher temperatures and longer annealing times. The simulation satisfactorily predicts the TED for annealing conditions, where the calculations overestimate the diffusion without taking Ostwald ripening into account.

Effect of Energy and Dose on Transient-Enhanced Diffusion and Defect Microstructure in Low Energy High Dose As+ Implanted Si

1996 ◽  
Vol 439 ◽  
Author(s):  
V. Krishnamoorthy ◽  
D. Venables ◽  
K. Moeller ◽  
K. S. Jones ◽  
B. Freer
Keyword(s):  
Point Defects ◽  
Surface Recombination ◽  
High Dose ◽  
Enhanced Diffusion ◽  
Projected Range ◽  
Diffusion Enhancement ◽  
Defect Microstructures ◽  
Dose Dependent ◽  
Higher Doses ◽  
Defect Microstructure

Abstract(001) CZ silicon wafers were implanted with arsenic (As+) at energies of 10–50keV to doses of 2x 1014 to 5x1015/cm2. All implants were amorphizing in nature. The samples were annealed at 700°C for 16hrs. The resultant defect microstructures were analyzed by XTEM and PTEM and the As profiles were analyzed by SIMS. The As profiles showed significantly enhanced diffusion in all of the annealed specimens. The diffusion enhancement was both energy and dose dependent. The lowest dose implant/annealed samples did not show As clustering which translated to a lack of defects at the projected range. At higher doses, however, projected range defects were clearly observed, presumably due to interstitials generated during As clustering. The extent of enhancement in diffusion and its relation to the defect microstructure is explained by a combination of factors including surface recombination of point defects, As precipitation, As clustering and end of range damage.

Rapid Thermal Processing and The Quest for Ultra Shallow Boron Junctions

1986 ◽  
Vol 71 ◽  
Author(s):  
Tom Sedgwick
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Attractive Potential ◽  
High Activation ◽  
Shallow Junction ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion ◽  
Diffusion Effects ◽  
Junction Formation ◽  
Short Time

AbstractRapid Thermal Processing (RTP) can minimize processing time and therefore minimize dopant motion during annealing of ion implanted junctions. In spite of the advantage of short time annealing using RTP, the formation of shallow B junctions is thwarted by channeling, transient enhanced diffusion and concentration enhanced diffusion effects all of which lead to deeper B profiles. Channeling and transient enhanced diffusion can be avoided by preamorphizing the silicon before the B implant. However, defects at the original amorphous/crystal boundary persist after annealing. Very low energy B implantation can lead to very shallow dopant profiles and in spite of channeling effects, offers an attractive potential shallow junction technology. In all of the shallow junction formation techniques RTP is required to achieve both high activation of the implanted species and minimal diffusion of the implanted dopant.

What Does Self-Diffusion Tell Us about Ultra Shallow Junctions?

2000 ◽  
Vol 610 ◽  
Author(s):  
Ant Ural ◽  
Serene Koh ◽  
P. B. Griffin ◽  
J. D. Plummer
Keyword(s):  
Point Defects ◽  
High Concentration ◽  
Enhanced Diffusion ◽  
Self Diffusion ◽  
Native Point Defects ◽  
Junction Formation ◽  
Ultra Shallow Junctions ◽  
High Concentrations ◽  
Temperature Furnace ◽  
Dopant Profiles

AbstractUnderstanding the coupling between native point defects and dopants at high concentrations in silicon will be key to ultra shallow junction formation in silicon technology. Other effects, such as transient enhanced diffusion (TED) will become less important. In this paper, we first describe how thermodynamic properties of the two native point defects in silicon, namely vacancies and self-interstitials, have been obtained by studying self-diffusion in isotopically enriched structures. We then discuss what this tells us about dopant diffusion. In particular, we show that the diffusion of high concentration shallow dopant profiles is determined by the competition between the flux of mobile dopants and those of the native point defects. These fluxes are proportional to the interstitial or vacancy components of dopant and self-diffusion, respectively. This is why understanding the microscopic mechanisms of silicon self-diffusion is important in predicting and modeling the diffusion of ultra shallow dopant profiles. As an example, we show experimental data and simulation fits of how these coupling effects play a role in the annealing of shallow BF2 ion implantation profiles. We conclude that relatively low temperature furnace cycles following high temperature rapid thermal anneals (RTA) have a significant effect on the minimum junction depth that can be achieved.

Antimony Clustering due to High-dose Implantation

2000 ◽  
Vol 610 ◽  
Author(s):  
Kentaro Shibahara ◽  
Dai Onimatsu
Keyword(s):  
Sheet Resistance ◽  
Rapid Thermal Annealing ◽  
Implantation Dose ◽  
Limiting Factor ◽  
High Dose ◽  
Junction Depth ◽  
Promising Technique ◽  
Depth Profiles ◽  
Dopant Loss ◽  
High Dose Implantation

AbstractAntimony implantation is a promising technique for fabricating ultra-shallow n+/p junctions for extensions of sub-100-nm n-MOSFETs. By increasing the Sb+ implantation dose to 6×1014 cm−2, sheet resistance (Rs) of an implanted layer was reduced to 260 /sq. for rapid thermal annealing (RTA) at 800°C. The obtained junction depth of 19 nm is suitable for sub-100-nm MOSFETs. However, the reduction in the sheet resistance showed a tendency to saturate. No pileup at the Si-SiO2 interface, which was the major origin of dopant loss in lower dose cases was, observed in Sb depth profiles in this case. However, in the case of 900°C RTA, Sb depth profiles indicated that Sb was nearly immobile in the region where Sb concentration exceeded 1×1020 cm−3. These results imply that the major limiting factor of Rs reduction under the highdose condition is Sb precipitation, which is different from the lower dose cases.

Optimization of Fluorine Co-implantation for PMOS Source and Drain Extension Formation for 65nm Technology Node

2004 ◽  
Vol 810 ◽  
Author(s):  
H. Graoui ◽  
M. Hilkene ◽  
B. McComb ◽  
M. Castle ◽  
S. Felch ◽  
...  
Keyword(s):  
Solubility Limit ◽  
Junction Depth ◽  
Solid Solubility Limit ◽  
Enhanced Diffusion ◽  
Technology Node ◽  
Energy Needs ◽  
Junction Formation ◽  
Boron Implantation ◽  
The Right ◽  
Spike Annealing

ABSTRACTThe main challenges for PMOS ultra shallow junction formation remain the transient enhanced diffusion (TED) and the solid solubility limit of boron in silicon. It has been demonstrated that low energy boron implantation and spike annealing are key in meeting the 90 nm technology node ITRS requirements. To meet the 65 nm technology requirements many studies have used fluorine co-implantation with boron and Si+ or Ge+ pre-amorphization (PAI) and spike annealing. Although using BF+2 can be attractive for its high throughput, self-amorphization and the presence of fluorine, many studies have shown that for the fluorine to successfully reduce TED its energy needs to be well optimized with respect to the boron's, therefore BF+2 does not present the right fluorine/boron energy ratio for the optimum junction formation. In this work we optimize the fluorine energy when a deep or shallow PAI is used. We also demonstrate that the fluorine dose needs to be carefully optimized otherwise a reverse effect can be observed. We will also show that the optimized junction depends less on the Ge+ energies between 2 keV and 20 keV and when HF etch is implemented after Ge+ PAI, improvements in both the junction depth and the sheet resistance are observed.

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