Analysis of Reflection High Energy Electron Diffraction Pattern of Silicon Carbide Grown on Silicon

1995 ◽  
Vol 399 ◽  
Author(s):  
G. Teichert ◽  
J. Pezoldt ◽  
V. Cimalla ◽  
O. Nennewitz ◽  
L. Spiess
Keyword(s):  
Silicon Carbide ◽  
Electron Diffraction ◽  
Diffraction Pattern ◽  
Process Parameters ◽  
Electron Diffraction Pattern ◽  
Lattice Relaxation ◽  
High Energy ◽  
Morphology Evolution ◽  
Rheed Pattern ◽  
High Energy Electron

ABSTRACTRHEED pattern of SiC layers on both (100) and (111)Si grown by carbonization were studied. Different deviations from the single crystalline structure were found ranging from twinning up to changes in the orientation and textured growth. Special attention was drawn on lattice relaxation and morphology evolution during the growth of the formed SiC. Relationships between the occurrence of typical RHEED pattern and the morphology and process parameters are presented.

scholarly journals Analysis of reflection high-energy electron diffraction pattern during SrTiO3 homoepitaxy

2005 ◽  
Vol 54 (1) ◽  
pp. 217
Author(s):  
Wei Xian-Hua ◽  
Zhang Ying ◽  
Li Jin-Long ◽  
Deng Xin-Wu ◽  
Liu Xing-Zhao ◽  
...  
Keyword(s):  
Electron Diffraction ◽  
Diffraction Pattern ◽  
Electron Diffraction Pattern ◽  
High Energy ◽  
Energy Electron ◽  
High Energy Electron

Rheed Observation of Lattice Relaxation During Ge/Si(O01) Heteroepitaxy

1989 ◽  
Vol 148 ◽  
Author(s):  
Kazushi Miki ◽  
Kunihiro Sakamoto ◽  
Tsunenori Sakamoto
Keyword(s):  
Electron Diffraction ◽  
Lattice Constant ◽  
Growth Temperature ◽  
Lattice Relaxation ◽  
High Energy ◽  
Energy Electron ◽  
High Energy Electron ◽  
Plane Lattice

ABSTRACTWe report the dynamic RHEED (reflection high energy electron diffraction) observation during Ge/Si(001) heteroepitaxy at various growth temperatures. The RHEED intensityanalysis and the in-plane lattice constant analysis reveal a growth fashion and lattice relaxation. Both of them depend strongly on growth temperature.

Initial Stages of Reactions between Monolayer Fe and Si(001) Surfaces

1995 ◽  
Vol 402 ◽  
Author(s):  
M. Hasegawa ◽  
N. Kobayashi ◽  
N. Hayashi
Keyword(s):  
Electron Diffraction ◽  
Room Temperature ◽  
High Energy ◽  
Rheed Pattern ◽  
High Energy Electron ◽  
Type B ◽  
Ion Scattering ◽  
Temperature Deposition ◽  
Hydrogen Termination

AbstractReactions between 1.5 monolayer(ML) Fe deposited on Si(001)-2 × 1 and -dihydride surfaces were studied in situ by reflection high-energy electron diffraction and time-of-flight ion scattering spectrometry with the use of 25 keV H ions. The reactions between Fe and Si which were successively deposited on Si(001)-dihydride surface were also studied. After the room temperature deposition Fe reacted with Si(001)-2 × 1 substrate resulting in the formation of polycrystalline Fe5Si3. By annealing to 560∼650°C composite heteroepitaxial layer of both type A and type B β -FeSi2 was formed. On the dihydride surface polycrystalline Fe was observed after 1.5ML Fe deposition at room temperature, and reaction between Fe and Si(001)-dihydride surface is not likely at room temperature. We observed 3D rough surface when we deposited only Fe layer on the dihydride surface and annealed above 700°C. The hydrogen termination of Si(001) surface prevents the deposited Fe from diffusing into the substrate below 500°C, however the annealing above 710°C leads to the diffusion. We obtained 2D ordered surface, which showed 3 × 3 RHEED pattern as referenced to the primitive unreconstructed Si(O01) surface net, when we deposited 2.5ML Fe and 5.8ML Si successively onto Si(001)-dihydride surface and annealed to 470°C.

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