In Situ Observation of Surface Morphology Evolution Corresponding to Reflection High-Energy Electron Diffraction Oscillation during Molecular Beam Epitaxy of Gallium Arsenide

1995 ◽  
Vol 34 (Part 2, No. 9B) ◽  
pp. L1187-L1190 ◽  
Author(s):  
Yoshikazu Homma ◽  
Jiro Osaka ◽  
NaohisaInoue
Keyword(s):  
Molecular Beam Epitaxy ◽  
Electron Diffraction ◽  
Surface Morphology ◽  
Molecular Beam ◽  
High Energy ◽  
In Situ Observation ◽  
Morphology Evolution ◽  
High Energy Electron ◽  
Surface Morphology Evolution

Argon Ion Bombardment During Molecular Beam Epitaxy of Ge (001)

1988 ◽  
Vol 128 ◽  
Author(s):  
Eric Chason ◽  
K. M. Horn ◽  
J. Y. Tsao ◽  
S. T. Picraux
Keyword(s):  
Molecular Beam Epitaxy ◽  
Surface Morphology ◽  
Molecular Beam ◽  
Ion Beam ◽  
High Energy ◽  
Low Energy ◽  
High Energy Electron ◽  
Argon Ion Bombardment ◽  
Argon Ion

ABSTRACTUsing in situ, real-time reflection high energy electron diffraction (RHEED), we have measured the evolution of Ge (001) surface morphology during simultaneous molecular beam epitaxy and Ar ion beam bombardment. Surprisingly, low-energy Ar ions during growth tend to smoothen the surface. Bombardment by the ion beam without growth roughens the surface, but the surface can be reversibly smoothened by restoring the growth beam. We have measured the effect of such “ion beam growth smoothening” above and below the critical temperature for intrinsic growth roughening. At all measured growth temperatures the surface initially smoothens, but below the critical roughening temperature the final surface morphology is rough whereas above this temperature the final morphology is smooth.

The Heteronucleation of and Defect Generation in MBE-Grown InAs Layers

1988 ◽  
Vol 144 ◽  
Author(s):  
M. M. AI-Jassim ◽  
J. P. Goral ◽  
P. Sheldon ◽  
K. M. Jones
Keyword(s):  
Molecular Beam Epitaxy ◽  
Electron Diffraction ◽  
Molecular Beam ◽  
High Energy ◽  
Misfit Dislocations ◽  
High Energy Electron ◽  
Cross Sectional ◽  
Plan View ◽  
Gaas Substrates

ABSTRACTEpitaxial InAs layers were grown by molecular beam epitaxy (MBE) on GaAs substrates. The initial stages of nucleation were studied by in situ reflection high energy electron diffraction (RHEED). Cross-sectional TEM examination was used to investigate the morphology of the growing layer, while plan-view examination revealed the generation of misfit dislocations. The growth mode was found to depend mainly on the conditions used to nucleate the epitaxial layer. In most cases, Stranski-Krastanov type of growth was observed.

scholarly journals SURFACE MORPHOLOGY OF GaN SURFACES DURING MOLECULAR BEAM EPITAXY

2000 ◽  
Vol 07 (05n06) ◽  
pp. 601-606 ◽  
Author(s):  
R. M. FEENSTRA ◽  
HUAJIE CHEN ◽  
V. RAMACHANDRAN ◽  
C. D. LEE ◽  
A. R. SMITH ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Electron Diffraction ◽  
Surface Morphology ◽  
Surface Structure ◽  
Scanning Probe Microscopy ◽  
Molecular Beam ◽  
High Energy ◽  
Scanning Probe ◽  
High Energy Electron ◽  
Structure And Morphology

The reconstruction and surface morphology of gallium nitride (0001) and [Formula: see text] surfaces are studied using scanning probe microscopy and reflection high energy electron diffraction. Results for bare GaN surfaces are summarized, and changes in the surface structure and morphology due to codeposition of indium or magnesium during growth are discussed.

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