Electrical Characteristics of CoSi2 Layers Formed by Mevva Implantation of Co into Si

1995 ◽  
Vol 402 ◽  
Author(s):  
Qicai Peng ◽  
S. P. WONG
Keyword(s):  
High Temperature ◽  
Electrical Properties ◽  
Substrate Temperature ◽  
Temperature Dependence ◽  
Metal Vapor ◽  
Ion Source ◽  
Vacuum Arc ◽  
High Dose ◽  
Strong Temperature Dependence ◽  
Low Resistivity

AbstractHigh dose Co implantation into Si has been performed with a metal vapor vacuum arc (MEVVA) ion source at an extraction voltage of 70 kV to doses from 8×1016 to 6×1017 ions cm−2 at substrate temperatures (Ts) in the range of 210°C to 700°C. Annealing was performed in nitrogen at various temperatures for various time intervals by either furnace annealing (FA) or rapid thermal annealing (RTA). The electrical properties of the CoSi2 layers formed were studied using resistivity and Hall effect measurements from 10 to 300K. We found that for all the samples prepared by MEVVA implantation, as long as a continuous CoSi2 layer was formed after annealing, a strong temperature dependence of the Hall coefficient was observed with a large peak at around 90 to 110K. The magnitude of the peak also varies depending on the substrate parameters and processing conditions. However, the temperature dependence of the resistivity for these CoSi2 layers follows the atthiessen's rule. We also found that it does not require high substrate temperature nor very high temperature annealing in order to form a CoSi2 layers with low resistivity by MEVVA implantation. Such low resistivity CoSi2 layers can be formed with a substrate temperature as low as 210°C after either RTA at high temperature for a few seconds or FA at a relatively low temperature of 750°C for one hour. The dependence of the electrical properties on Ts is also presented and discussed.

scholarly journals Formation of Buried Epitaxial Si-Ge Alloy Layers in Si Crystal by High Dose Ge ION Implantation

1991 ◽  
Vol 235 ◽  
Author(s):  
Kin Man Yu ◽  
Ian G. Brown ◽  
Seongil Im
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Lattice Mismatch ◽  
Solid Phase ◽  
Metal Vapor ◽  
Ion Source ◽  
Vacuum Arc ◽  
High Dose ◽  
Solid Phase Epitaxy ◽  
Ion Channeling

ABSTRACTWe have synthesized single crystal Si1−xGex alloy layers in Si <100> crystals by high dose Ge ion implantation and solid phase epitaxy. The implantation was performed using the metal vapor vacuum arc (Mevva) ion source. Ge ions at mean energies of 70 and 100 keV and with doses ranging from 1×1016 to to 7×1016 ions/cm2 were implanted into Si <100> crystals at room temperature, resulting in the formation of Si1−xGex alloy layers with peak Ge concentrations of 4 to 13 atomic %. Epitaxial regrowth of the amorphous layers was initiated by thermal annealing at temperatures higher than 500°C. The solid phase epitaxy process, the crystal quality, microstructures, interface morphology and defect structures were characterized by ion channeling and transmission electron microscopy. Compositionally graded single crystal Si1−xGex layers with full width at half maximum ∼100nm were formed under a ∼30nm Si layer after annealing at 600°C for 15 min. A high density of defects was found in the layers as well as in the substrate Si just below the original amorphous/crystalline interface. The concentration of these defects was significantly reduced after annealing at 900°C. The kinetics of the regrowth process, the crystalline quality of the alloy layers, the annealing characteristics of the defects, and the strains due to the lattice mismatch between the alloy and the substrate are discussed.

Solid Phase Epitaxy of Implanted Si-Ge-C Alloys

1995 ◽  
Vol 388 ◽  
Author(s):  
Xiang Lu ◽  
Nathan W. Cheung
Keyword(s):  
Lattice Mismatch ◽  
Solid Phase ◽  
Metal Vapor ◽  
High Dose Rate ◽  
Ion Source ◽  
Vacuum Arc ◽  
High Dose ◽  
Solid Phase Epitaxy ◽  
Cross Sectional ◽  
Rutherford Back Scattering

AbstractSi1-x-yGexCy/Si heterostuctures were formed on Si (100) surface by Ge and C implantation with a high dose rate MEtal - Vapor Vacuum arc (MEVVA) ion source and subsequent Solid Phase Epitaxy (SPE). after thermal annealing in the temperature range from 600 °C to 1200 °C, the implanted layer was studied using Rutherford Back-scattering Spectrometry (RBS), cross-sectional High Resolution Transmission Electron Microscopy (HRTEM) and fourbounce X-ray Diffraction (XRD) measurement. Due to the small lattice constant and wide bandgap of SiC, the incorporation of C into Si-Ge can provide a complementary material to Si-Ge for bandgap engineering of Si-based heterojunction structure. Polycrystals are formed at temperature at and below 1000 °C thermal growth, while single crystal epitaxial layer is formed at 1100 °C and beyond. XRD measurements near Si (004) peak confirm the compensation of the Si1-x Gex lattice mismatch strain by substitutional C. C implantation is also found to suppress the End of Range (EOR) defect growth.

Formation and Characteristics of CoSi2 Layers Synthesized by Mevva Implantation

1996 ◽  
Vol 438 ◽  
Author(s):  
S. P. Wong ◽  
Qicai Peng ◽  
W. Y. Cheung ◽  
W. S. Guo ◽  
J. B. Xu ◽  
...  
Keyword(s):  
Substrate Temperature ◽  
Ion Beam ◽  
Metal Vapor ◽  
Vacuum Arc ◽  
Strong Temperature Dependence ◽  
X Ray Diffraction ◽  
Si Substrates ◽  
Hall Effect Measurements ◽  
Large Peak ◽  
P Type

AbstractIon beam synthesis of CoSi2 layers in Si by MEVVA (Metal Vapor Vacuum Arc) implantation has been performed under various conditions. The formation and characteristics of these CoSi2 layers have been studied by XTEM, RBS, AFM, X-ray diffraction, ellipsometry, electrical and Hall effect measurements. It was found that a higher substrate temperature during implantation results in an as-implanted Co distribution closer to the surface and hence the formation of a shallower CoSi2 layer after annealing. Buried CoSi2 layers of good crystal quality and low resistivity CoSi2 can be formed by MEVVA implantation and annealing under appropriate conditions. A strong temperature dependence of the Hall coefficient showing a large peak at around 100K was observed for the CoSi2 layers formed in p-type Si substrates but not in n-type substrates. The properties and their dependence on the processing conditions, in particular, the substrate temperature during implantation, are presented and discussed.

Field Emission Properties of Ion Beam Synthesized SiC/Si Heterostructures by MEVVA Implantation

1998 ◽  
Vol 509 ◽  
Author(s):  
Dihu Chen ◽  
S. P. Wong ◽  
W.Y. Cheung ◽  
E.Z. Luo ◽  
W. Wu ◽  
...  
Keyword(s):  
Field Emission ◽  
Photoelectron Spectroscopy ◽  
Ion Beam ◽  
Metal Vapor ◽  
Ion Source ◽  
Vacuum Arc ◽  
High Dose ◽  
Emission Properties ◽  
Field Emission Properties ◽  
Two Factors

AbstractPlanar SiC/Si heterostructures were formed by high dose carbon implantation using a metal vapor vacuum arc ion source. The variations of the field emission properties with the implant dose and annealing conditions were studied. A remarkably low turn-on field of IV/μm was observed from a sample implanted at 35 keV to a dose of 1.0×1018 cm−2 with subsequent annealing in nitrogen at 1200°C for 2h. The chemical composition depth profiles were determined from x-ray photoelectron spectroscopy and the surface morphology was observed by atomic force microscopy. The formation of a thin surface stoichiometric SiC layer and the formation of densely distributed small protrusions on the surface are believed to be the two factors responsible for the efficient electron field emission.

Formation and Characteristics of CoSi2 Layers Synthesized by Mevva Implantation

1996 ◽  
Vol 439 ◽  
Author(s):  
S. P. Wong ◽  
Qicai Peng ◽  
W. Y. Cheung ◽  
W. S. Guo ◽  
J. B. Xu ◽  
...  
Keyword(s):  
Substrate Temperature ◽  
Ion Beam ◽  
Metal Vapor ◽  
Vacuum Arc ◽  
Strong Temperature Dependence ◽  
X Ray Diffraction ◽  
Si Substrates ◽  
Hall Effect Measurements ◽  
Large Peak ◽  
P Type

AbstractIon beam synthesis of CoSi2 layers in Si by NIEVVA (Metal Vapor Vacuum Arc) implantation has been performed under various conditions. The formation and characteristics of these CoSi2 layers have been studied by XTEM, RBS, AFM, X-ray diffraction, ellipsometry, electrical and Hall effect measurements. It was found that a higher substrate temperature during implantation results in an as-implanted Co distribution closer to the surface and hence the formation of a shallower CoSi2 layer after annealing. Buried CoSi2 layers of good crystal quality and low resistivity CoSi2 can be formed by MEVVA implantation and annealing under appropriate conditions. A strong temperature dependence of the Hall coefficient showing a large peak at around 100K was observed for the CoSi2 layers formed in p-type Si substrates but not in n-type substrates. The properties and their dependence on the processing conditions, in particular, the substrate temperature during implantation, are presented and discussed.

Effects of Beam Current Density on Ion Beam Synthesis OF SiC

2001 ◽  
Vol 680 ◽  
Author(s):  
D.H. Chen ◽  
S.P. Wong ◽  
J.K.N. Lindner
Keyword(s):  
Current Density ◽  
Photoelectron Spectroscopy ◽  
Ion Beam ◽  
Metal Vapor ◽  
Beam Current ◽  
Ion Source ◽  
Vacuum Arc ◽  
Beam Current Density ◽  
Carbon Clusters ◽  
High Dose

ABSTRACTThin SiC layers were synthesized by high dose C implantation into silicon using a metal vapor vacuum arc ion source at various conditions. Characterization of the ion beam synthesized SiC layers was performed using various techniques including x-ray photoelectron spectroscopy (XPS), Fourier transform infrared (FTIR) absorption, and Raman spectroscopy. The XPS results showed that for samples with over-stoichiometric implant doses, if the implant beam current density was not high enough, even after prolonged thermal annealing at high temperatures, the as-implanted gaussian-like carbon depth profile remained unchanged. However, if the implant beam current density was sufficiently high, there was significant carbon redistribution during annealing, so that a thicker stoichiometric SiC layer can be formed after annealing. The XPS and Raman results also showed that there were carbon clusters formed in the as-implanted layers for the low beam current density implanted samples, while the formation of such carbon clusters was minimal in the high beam current density as-implanted samples. The effect of beam current density on the fraction of different bonding states of the implanted carbon atoms was studied.

Formation of Buried Iridium Silicide Layer in Silicon by High Dose Iridium Ion Implantation

1989 ◽  
Vol 147 ◽  
Author(s):  
K. M. Yu ◽  
B. Katz ◽  
I. C. Wu ◽  
I. G. Brown
Keyword(s):  
Ion Implantation ◽  
Metal Ion ◽  
Room Temperature ◽  
Metal Vapor ◽  
Ion Source ◽  
Vacuum Arc ◽  
High Dose ◽  
High Current ◽  
Interface Morphology ◽  
Silicide Layer

AbstractWe have investigated the formation of IrSi3 layers buried in <111> silicon. The layers are formed by iridium ion implantation using a metal vapor vacuum arc (MEVVA) high current metal ion source at room temperature with average beam energy = 130 keV. Doses of the Ir ions ranging from 2×1016 to 1.5×1017/cm2 were implanted into <111> Si. The formation of IrSi3 phase is realized after annealing at temperatures as low as 500°C. A continuous IrSi3 layer of =200 Å thick buried under =400 Å Si was achieved with samples implanted with doses not less than 3.5×1016/cm2. Implantated doses above 8×1016/cm2 resulted in the formation of an IrSi3 layer on the surface due to excessive sputtering of Si by the TI ions. The effects of implant dose on phase formation, interface morphology and implanted atom redistribution are discussed. Radiation damage and regrowth of Si due to the implantation process was also studied.

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