Incorporation of Nitrogen Atoms at Si/SiO2 Interfaces of Field Effect Transistors (FETs) to Improve Device Reliability
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On Line
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AbstractIncorporation of N-atoms at the Si-Si02 interface in field effect transistors, FETs, with ultrathin dielectrics (≤ 5.5 nm) improves device reliability. Four aspects of our recent research on nitrided Si-Si02 interfaces are discussed in this paper: i) the low-temperature/low-thermal budget process by which interface chemistry is controlled, and optimized; ii) the use of on-line and off-line diagnostics to determine the spatial confinement and concentration of interfacial N-atom incorporation; iii) comparisons of device properties for non-nitrided and nitrided interfaces; and iv) the proposal of an atom-scale model for the role that interfacial N-atoms play in improving device reliability.
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2011 ◽
Vol 160
(1)
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pp. 59-64
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2000 ◽
Vol 53
(1-4)
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pp. 209-212
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2017 ◽
Vol 64
(9)
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pp. 3927-3933
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