A Fetish for Gallium Arsenide

1995 ◽  
Vol 410 ◽  
Author(s):  
Andrew R. Barron
Keyword(s):  
Gallium Arsenide ◽  
Dielectric Material ◽  
Chemical Vapor ◽  
Organometallic Compounds ◽  
Organic Chemical ◽  
New Class ◽  
Metal Organic ◽  
Effect Transistor ◽  
Organic Chemical Vapor Deposition ◽  
Insulating Properties

ABSTRACTAn overview of the development of a new dielectric material, cubic-GaS, from the synthesis of new organometallic compounds to the fabrication of a new class of gallium arsenide based transistor is presented as a representative example of the possibility that inorganic chemistry can directly effect the development of new semiconductor devices. The gallium sulfido compound [(tBu)GaS]4, readily prepared from tri-tert-butyl gallium, may be used as a precursor for the growth of GaS thin films by metal organic chemical vapor deposition (MOCVD). Photoluminescence and electronic measurements indicate that this material provides a passivation coating for GaAs. Furthermore, the insulating properties of cubic-GaS make it suitable as a the insulating gate layer in a new class of GaAs transistor: a field effect transistor with a sulfide heterojunction (FETISH).

Epitaxial Structures For Optical Information Processing Applications: Superlattice Infrared Detectors

1991 ◽  
Vol 228 ◽  
Author(s):  
Moses T. Asom
Keyword(s):  
Information Processing ◽  
Quantum Wells ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Optical Information ◽  
Optical Information Processing ◽  
New Class ◽  
Metal Organic ◽  
Free Interfaces ◽  
Organic Chemical Vapor Deposition

ABSTRACTAdvances in epitaxial growth techniques such as molecular beam epitaxy and metal organic chemical vapor deposition have facilitated the formation of high quality III-V heterostructures with dimensional control down to atomic levels, with abrupt doping and near-defect-free interfaces. The flexibility and remarkable control offered by these techniques have resulted in the fabrication of new devices based on confinement or modulation of carriers in thin III-V heterostructures. Quantum wells and superlattice based devices are expected to be utilized in optical information processing as sources, modulators, and detectors. In this paper, we will review the general epitaxial requirements for quantum wells and superlattices based devices, and discuss the fabrication and properties of a new class of infrared photodetectors that employ intraband transitions in quantum wells.

New Organotellurium Precursors for the Pyrolytic and Photolytic Deposition of Hg1-xCdxTe

1988 ◽  
Vol 131 ◽  
Author(s):  
Robert W. Gedridge ◽  
Kelvin T. Higa ◽  
Robin A. Nissan
Keyword(s):  
High Performance ◽  
Film Growth ◽  
Chemical Vapor ◽  
Organometallic Compounds ◽  
Organic Chemical ◽  
Rate Determining Step ◽  
Potential Applicability ◽  
Metal Organic ◽  
Organometallic Precursors ◽  
Organic Chemical Vapor Deposition

ABSTRACTOrganometallic precursors with low decomposition temperatures are essential in the fabrication of high performance mercury cadmium telluride (Hg1-xCdxTe) infrared detectors by pyrolytic and photolytic metal-organic chemical vapor deposition (MOCVD). Film growth temperature is governed by the relative stability and/or reactivity of the organotellurium precursor, which is determined by the strength of the Te-C bonds. Since the rate-determining step in the pyrolysis of organometallic compounds involves bond breaking and free radical formation, we have concentrated on the synthesis of a variety of organotellurium precursors with substituents that possess low activation energies for the formation of hydrocarbon free radicals. The synthesis, characterization, and properties of methylallyltelluride, ethylallyltelluride, isopropylallyltelluride, tertiarybutylallyl-telluride, methylbenzyltelluride, and methylpentadienyltelluride are reported. These unsymmetrical tellurides were characterized by 1H, 13 C, and 125Te NMR spectroscopy. The potential applicability of these organotellurium precursors to lower film-growth temperatures in MOCVD is discussed.

Sign in / Sign up

Export Citation Format

Share Document