Formation of Stacked Self-Assembled InAs Quantum Dots in GaAs Matrix for Laser Applications

1995 ◽  
Vol 417 ◽  
Author(s):  
V. M. Ustinov ◽  
A. Yu. Egorov ◽  
A. E Zhukov ◽  
N. N. Ledentsov ◽  
M. V. Maksimov ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Current Density ◽  
Ground State ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Laser Applications ◽  
Inas Quantum Dots ◽  
Gaas Matrix ◽  
Single Sheet ◽  
Thermal Stability Of

AbstractVertically coupled InAs quantum dots have been synthesized by MBE through successive deposition of InAs dot sheets and thin GaAs spacers. The energy of ground state transition in PL spectra has been found to depend on a number of dot sheets and the spacer width. Injection laser based on vertically coupled quantum dots demonstrated lasing via the ground state of quantum dots in the entire 80K-300K temperature range. Lower threshold current density and wider range of the thermal stability of threshold current density as compared to the single sheet quantum dot laser have been observed.

3D Arrays of Quantum Dots for Laser Applications

1996 ◽  
Vol 421 ◽  
Author(s):  
N.N. Ledentsov ◽  
J. Böhrer ◽  
D. Bimberg ◽  
S.V. Zaitsev ◽  
V.M. Ustinov ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Laser Applications ◽  
Nanoscale Structures ◽  
Self Organized ◽  
Gaas Matrix ◽  
Short Period ◽  
Ordered Array ◽  
Differential Efficiency

AbstractWe have fabricated and studied injection lasers based on vertically coupled quantum dots (VECODs). VECODs are self-organized during alternate short-period GaAs-InAs (InGaAs) depositions after InAs (or InGaAs) pyramids are formed on a GaAs (100). The resulting arrangement represents laterally ordered array of nanoscale structures inserted in a GaAs matrix, where each structure is composed of several vertically merging InAs (or InGaAs) parts. VECODs are introduced in the active region of GaAs-AlGaAs double heterostructure laser. The threshold current density remarkably decreases with increase in number of periods (N) of the VECOD (down to 90 A cm-2 at 300K for N=10). The differential efficiency increases with N and the lasing occurs through ground state of quantum dot exciton up to room temperature (λ=1.05 μm).

InAs Quantum Dots in AlAs/GaAs Short Period Superlattices: Structure, Optical Characteristics and Laser Diodes

2001 ◽  
Vol 707 ◽  
Author(s):  
Vadim Tokranov ◽  
M. Yakimov ◽  
A. Katsnelson ◽  
K. Dovidenko ◽  
R. Todt ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Room Temperature ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Inas Quantum Dots ◽  
Transmission Electron ◽  
Short Period ◽  
Short Period Superlattices ◽  
Emitting Lasers ◽  
Cladding Layers

ABSTRACTThe influence of two monolayer - thick AlAs under- and overlayers on the formation and properties of self-assembled InAs quantum dots (QDs) has been studied using transmission electron microscopy (TEM) and photoluminescence (PL). Single sheets of InAs QDs were grown inside a 2ML/8ML AlAs/GaAs short-period superlattice with various combinations of under- and overlayers. It was found that 2.4ML InAs QDs with GaAs underlayer and 2ML AlAs overlayer exhibited the lowest QD surface density of 4.2x1010 cm-2 and the largest QD lateral size of about 19 nm as compared to the other combinations of cladding layers. This InAs QD ensemble has also shown the highest room temperature PL intensity with a peak at 1210 nm and the narrowest linewidth, 34 meV. Fabricated edge-emitting lasers using triple layers of InAs QDs with AlAs overlayer demonstrated 120 A/cm2 threshold current density and 1230 nm emission wavelength at room temperature. Excited state QD lasers have shown high thermal stability of threshold current up to 130°C.

InAs quantum dots in AlAs/GaAs short period superlattices: structure, optical characteristics and laser diodes

2001 ◽  
Vol 692 ◽  
Author(s):  
Vadim Tokranov ◽  
M. Yakimov ◽  
A. Katsnelson ◽  
K. Dovidenko ◽  
R. Todt ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Room Temperature ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Inas Quantum Dots ◽  
Transmission Electron ◽  
Short Period ◽  
Short Period Superlattices ◽  
Emitting Lasers ◽  
Cladding Layers

AbstractThe influence of two monolayer - thick AlAs under- and overlayers on the formation and properties of self-assembled InAs quantum dots (QDs) has been studied using transmission electron microscopy (TEM) and photoluminescence (PL). Single sheets of InAs QDs were grown inside a 2ML/8ML AlAs/GaAs short-period superlattice with various combinations of under- and overlayers. It was found that 2.4ML InAs QDs with GaAs underlayer and 2ML AlAs overlayer exhibited the lowest QD surface density of 4.2×1010 cm-2 and the largest QD lateral size of about 19 nm as compared to the other combinations of cladding layers. This InAs QD ensemble has also shown the highest room temperature PL intensity with a peak at 1210 nm and the narrowest linewidth, 34 meV. Fabricated edge-emitting lasers using triple layers of InAs QDs with AlAs overlayer demonstrated 120 A/cm2 threshold current density and 1230 nm emission wavelength at room temperature. Excited state QD lasers have shown high thermal stability of threshold current up to 130°C.

Shape Engineered InAs Quantum Dots with Stabilized Electronic Properties

2002 ◽  
Vol 737 ◽  
Author(s):  
V. Tokranov ◽  
M. Yakimov ◽  
A. Katsnelson ◽  
K. Dovidenko ◽  
M. Lamberti ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Room Temperature ◽  
State Energy ◽  
Growth Parameters ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Temperature Threshold ◽  
Inas Quantum Dots ◽  
Subsequent Heating ◽  
Heating Up

ABSTRACTWe have studied the influence of overgrowth procedure and a few monolayer-thick AlAs overlayer on the properties of self-assembled InAs quantum dots (QDs) using scanning electron microscopy (SEM) and photoluminescence (PL). PL spectroscopy was used to optimize optical properties of the QDs by shape engineering (QD truncation) through adjustment of the thickness of overlayers and temperature of the subsequent heating. QDs with 6 nm - thick overlayer with subsequent heating up to 560°C was found to have the highest PL intensity at room temperature and the lowest FWHM, 29 meV. Ground state energy of the truncated QDs is very stable against variations of growth parameters. 1.23 μm edge-emitting laser of triple-layer QD structure demonstrated room temperature threshold current density, 74 A/cm2.

Visible AlGaAs single quantum well lasers with low threshold current density grown by molecular beam epitaxy

1988 ◽  
Vol 24 (9) ◽  
pp. 537
Author(s):  
B. Saint-Cricq ◽  
F. Chatenoud ◽  
F. Lozes-Dupuy ◽  
S. Fourtine ◽  
H. Martinot
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Current Density ◽  
Molecular Beam ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Quantum Well Lasers ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Low Threshold

Investigation of the temperature dependence of the threshold current density of GaInP/AlGaInP double‐heterostructure lasers

1990 ◽  
Vol 57 (22) ◽  
pp. 2291-2293 ◽  
Author(s):  
S. H. Hagen ◽  
A. Valster ◽  
M. J. B. Boermans ◽  
J. van der Heyden
Keyword(s):  
Temperature Dependence ◽  
Current Density ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Double Heterostructure

Low Threshold Current Density (100) GaInAsP/InP Double-Heterostructure Lasers for Wavelength 1.3 µm

1979 ◽  
Vol 18 (9) ◽  
pp. 1795-1805 ◽  
Author(s):  
Yoshio Itaya ◽  
Yasuharu Suematsu ◽  
Shinya Katayama ◽  
Katsumi Kishino ◽  
Shigehisa Arai
Keyword(s):  
Current Density ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Double Heterostructure ◽  
Low Threshold

Very low threshold current density SCH-MQW laser diodes emitting at 1.55[micro sign]m

1989 ◽  
Vol 25 (16) ◽  
pp. 1103 ◽  
Author(s):  
R.W. Glew ◽  
B. Garrett ◽  
P.D. Greene
Keyword(s):  
Current Density ◽  
Laser Diodes ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Low Threshold
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