Investigation of an NEA Diamond Vacuum Microtriode Array

1996 ◽  
Vol 423 ◽  
Author(s):  
C. W. Hatfield ◽  
G. L. Bilbro ◽  
A. S. Morris ◽  
P. K. Baumann ◽  
B. L. Ward ◽  
...  

AbstractThe properties and characteristics of vacuum microtriodes based on NEA diamond surfaces were modelled. Specifically, an NEA diamond vacuum microtriode array was investigated using electrical measurements, electron optics software, and microwave circuit simulation. Data for emission current versus applied voltage for various anode-to-cathode distances for diamond NEA surfaces was analyzed and various parameters were extracted. Electron optics software was used to determine Fowler-Nordheim and space-charge-limited DC I-V characteristics for each microtriode. Microwave circuit simulation was done to determine the behavior of arrays of these vacuum microtriodes in an RF amplifier circuit.

2021 ◽  
Vol 129 (15) ◽  
pp. 155102
Author(s):  
B. Seznec ◽  
Ph. Dessante ◽  
Ph. Teste ◽  
T. Minea

2018 ◽  
pp. 31-36
Author(s):  
Balázs Matolcsy ◽  
Attila Zólomy

During the analytical design process of wideband impedance matching major problems may arise, that might lead to non-realizable matching networks, preventing the successful impedance matching. In this paper two practical design rules and a simplified equation is presented, supporting the design of physically realizable impedance matching networks. The design rules and calculation technique introduced by this paper is summarized, and validated by microwave circuit simulation examples.


1977 ◽  
Vol 55 (7-8) ◽  
pp. 735-741 ◽  
Author(s):  
F. L. Weichman ◽  
K. T. Chee

This paper reports on the experimental results on the characteristics of the single-crystal Cu2O diodes, annealed at a pressure of 10−6 Torr at a temperature of 800 °C. In contrast to our previous report on oxidized samples which showed the characteristics of double injection diodes, these diodes exhibit the characteristics of single-carrier space-charge-limited (SCL) conduction. The conduction mechanism was confirmed by measurements on the I–V characteristics at various temperatures, the thickness vs. current relation at a given voltage, the effect of photomemory on the I–V characteristics, and the transient current response to applied voltage steps. The results also indicate that there are continuous levels of localized states in these samples in the range 0.06 eV to 0.47 eV above the valence band edge.


1995 ◽  
Author(s):  
John A. Rouse ◽  
Xieqing Zhu ◽  
Eric Munro

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